P-type transparent conducting In2O3–Ag2O thin films prepared by rf magnetron sputtering

1998 ◽  
Vol 16 (3) ◽  
pp. 1218-1221 ◽  
Author(s):  
T. Minami ◽  
K. Shimokawa ◽  
T. Miyata
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Transparent Conducting ◽  
P Type

Improve the P-Type Conductivity of SnO Films by Na Ion Implantation

2016 ◽  
Vol 848 ◽  
pp. 477-481
Author(s):  
Tie Ying Yang ◽  
Jun Zhao ◽  
Xiao Long Li ◽  
Xing Yu Gao ◽  
Chao Fan Xue ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Ion Implantation ◽  
Magnetron Sputtering ◽  
Electronic Properties ◽  
Rf Magnetron Sputtering ◽  
Type Conductivity ◽  
Transparent Conducting ◽  
P Type ◽  
Surface Morphologies

P-type transparent conducting SnO thin films were directly fabricated using RF magnetron sputtering. The electronic properties of the SnO thin films were enhanced by Na ion implantation and annealing at 200°C. The growth and implantation conditions were systemically investigated. The electronic properties, optical properties, microstructure and surface morphologies of the films were characterized. It was observed that the structure of the Na-doped SnO films was crucial to improving their p-type conductivity.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Transparent conducting p-type NiO thin films prepared by magnetron sputtering

1993 ◽  
Vol 236 (1-2) ◽  
pp. 27-31 ◽  
Author(s):  
H. Sato ◽  
T. Minami ◽  
S. Takata ◽  
T. Yamada
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transparent Conducting ◽  
P Type

scholarly journals Co-doped p-type ZnO:Al-N Thin Films Grown by RF-Magnetron Sputtering at Room Temperature

2020 ◽  
Vol 23 (3) ◽  
Author(s):  
Raul Ramos ◽  
Marcio Peron Franco de Godoy ◽  
Elidiane Cipriano Rangel ◽  
Nilson Cristino da Cruz ◽  
Steven F. Durrant ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
P Type ◽  
Co Doped

Investigation on Na-N dual acceptors doped p-type ZnCdO thin films synthesized by RF magnetron sputtering

2017 ◽  
Vol 68 ◽  
pp. 316-321 ◽  
Author(s):  
Yingrui Sui ◽  
Yanping Song ◽  
Huanhuan Sun ◽  
Zhanwu Wang ◽  
Bin Yao ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
P Type
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