Single nanoparticle of organic p-type and n-type hybrid materials: nanoscale phase separation and photovoltaic effect

2012 ◽  
Vol 22 (6) ◽  
pp. 2485-2490 ◽  
Author(s):  
Yong-baek Lee ◽  
Seok Ho Lee ◽  
Kihyun Kim ◽  
Jin Woo Lee ◽  
Kyung-Yeon Han ◽  
...  
Keyword(s):  
Phase Separation ◽  
Hybrid Materials ◽  
Photovoltaic Effect ◽  
Organic P ◽  
Nanoscale Phase Separation ◽  
Single Nanoparticle ◽  
P Type

scholarly journals ToF-SIMS imaging of the nanoscale phase separation in polymeric light emitting diodes: Effect of nanostructure on device efficiency

The Analyst ◽  
2011 ◽  
Vol 136 (4) ◽  
pp. 716-723 ◽  
Author(s):  
Bang-Ying Yu ◽  
Che-Hung Kuo ◽  
Wei-Ben Wang ◽  
Guo-Ji Yen ◽  
Shin-ichi Iida ◽  
...  
Keyword(s):  
Phase Separation ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Nanoscale Phase Separation ◽  
Tof Sims ◽  
Device Efficiency

scholarly journals Electrochemical Detection of Nanoscale Phase Separation in Binary Self-Assembled Monolayers

Langmuir ◽  
2005 ◽  
Vol 21 (10) ◽  
pp. 4615-4621 ◽  
Author(s):  
R. Carlisle Chambers ◽  
Christina E. Inman ◽  
James E. Hutchison
Keyword(s):  
Phase Separation ◽  
Electrochemical Detection ◽  
Self Assembled Monolayers ◽  
Nanoscale Phase Separation ◽  
Assembled Monolayers ◽  
Self Assembled

scholarly journals Functional Nanoscale Phase Separation and Intertwined Order in Quantum Complex Materials

2021 ◽  
Vol 6 (4) ◽  
pp. 40
Author(s):  
Gaetano Campi ◽  
Antonio Bianconi
Keyword(s):  
Phase Separation ◽  
High Temperature ◽  
Physical Properties ◽  
High Precision ◽  
High Temperature Superconductors ◽  
Complex Materials ◽  
Structural Units ◽  
X Ray ◽  
Nanoscale Phase Separation ◽  
Complex Matter

Nanoscale phase separation (NPS), characterized by particular types of correlated disorders, plays an important role in the functionality of high-temperature superconductors (HTS). Our results show that multiscale heterogeneity is an essential ingredient of quantum functionality in complex materials. Here, the interactions developing between different structural units cause dynamical spatiotemporal conformations with correlated disorder; thus, visualizing conformational landscapes is fundamental for understanding the physical properties of complex matter and requires advanced methodologies based on high-precision X-ray measurements. We discuss the connections between the dynamical correlated disorder at nanoscale and the functionality in oxygen-doped perovskite superconducting materials.

Synthesis and Properties of Soluble Organic p-Type Semiconductor based on TIPS-anthracene Moiety

2009 ◽  
Vol 504 (1) ◽  
pp. 18-26 ◽  
Author(s):  
Ki Hwa Jung ◽  
Kyung Hwan Kim ◽  
Tae Wan Lee ◽  
Min Ju Cho ◽  
Mi Yeon Cho ◽  
...  
Keyword(s):  
Organic P ◽  
Type Semiconductor ◽  
P Type

Photovoltaic and Electroluminescent Properties of Stainetched Porous Silicon Based Heterojunctions

1995 ◽  
Vol 405 ◽  
Author(s):  
D. Dimova-Malinovska ◽  
M. Tzolov ◽  
M. Kamenova ◽  
N. Tzenov ◽  
M. Sendova-Vassileva ◽  
...  
Keyword(s):  
Light Emission ◽  
Photovoltaic Effect ◽  
Luminescent Properties ◽  
Porous Si ◽  
Photoelectric Properties ◽  
Type C ◽  
P Type ◽  
Silicon Based ◽  
Electrical Bias ◽  
Stain Etching

AbstractThe results of photoelectric properties and electroluminescent studies of structures ZnO/porous Si/p-type c-Si/Al and ZnO/porous Si/p-n c-Si junction/Al are presented. Porous Si is prepared by stain etching of c-Si covered with thin Al film. The transparent ZnO film allows light emission through the top surface of the device under forward electrical bias. Photocurrent is observed under reverse bias and a photovoltaic effect is measured on the p-n junction PS device. The model based on injection of minority carriers through a narrow energy barrier into the porous Si and the presence of the barrier at the interface porous Si/c-Si is suggested for describing the electrical, photoelectric and luminescent properties of the structures.

Photovoltaic Characterization of Trapping in Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
D. W. Boeringer ◽  
R. Tsu
Keyword(s):  
Porous Silicon ◽  
Photovoltaic Effect ◽  
Light Spot ◽  
Dangling Bond ◽  
Photogenerated Electrons ◽  
Device Applications ◽  
Photovoltaic Characterization ◽  
P Type ◽  
Silicon Based ◽  
Position Sensitive Detectors

ABSTRACTWe report the first observation of the lateral photovoltaic effect in porous silicon. Contacts placed on either side of a porous silicon region develop a voltage up to several millivolts if the sample is asymmetrically illuminated. If the light spot is closer to one contact, the voltage will have one polarity; if it is closer to the other contact, the polarity will be opposite. In the case of n-type, the contact nearest the light spot is positive; for p-type, the contact nearest the light spot is negative In the region between the contacts, the photovoltage varies almost linearly with the position of the light spot, over a distance 4.5 cm across. The origin of our lateral photoeffect may be explained by the trapping of photoexcited carriers by a pair of dangling bond centers in porous silicon. In the case of p-type, the photogenerated electrons are trapped by the dangling bond states while holes diffuse away in the substrate. The situation for n-type is opposite; holes are trapped by the dangling bond states while electrons diffuse away in the substrate. This differs from the conventional lateral photoeffect, which arises under the nonuniform illumination of a junction between two layers of differing conductivities. Hamamatsu sells silicon-based position-sensitive detectors with a resolution down to 0.1 µm. The possibility of using this lateral photoeffect to characterize these dangling bond states in porous silicon as well as several possible device applications will be discussed.

Sign in / Sign up

Export Citation Format

Share Document