Low Resistivity Transparent Indium Tin Oxide (Ito) Films Sputtered At Room Temperature With H2O Addition

1996 ◽  
Vol 424 ◽  
Author(s):  
Ken-Ichi Onisawa ◽  
Etsuko Nishimura ◽  
Masahiko Ando ◽  
Takeshi Satou ◽  
Masaru Takabatake* ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxygen Vacancies ◽  
Dc Magnetron Sputtering ◽  
Low Resistivity ◽  
Ito Film ◽  
Good Pattern ◽  
Cluster Type ◽  
Argon Sputtering

AbstractA new kind of amorphous indium tin oxide (ITO) film with good pattern delineation properties and mass production capability, as well as low resistivity and high transparency has been developed. The film was prepared by a cluster-type DC magnetron sputtering apparatus at room temperature with H2O addition to the argon sputtering gas. The amorphous ITO film quality was improved by effective termination of oxygen vacancies with -OH species generated by enhanced decomposition from the added H2O in the plasma.

Low resistivity indium tin oxide films deposited by unbalanced DC magnetron sputtering

1999 ◽  
Vol 341 (1-2) ◽  
pp. 225-229 ◽  
Author(s):  
S.H Shin ◽  
J.H Shin ◽  
K.J Park ◽  
T Ishida ◽  
O Tabata ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Dc Magnetron Sputtering ◽  
Low Resistivity ◽  
Tin Oxide Films

Low-Resistivity Highly Transparent Indium-Tin-Oxide Thin Films Prepared at Room Temperature by Synchrotron Radiation Ablation

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6846-6850 ◽  
Author(s):  
Yoshihiro Akagi ◽  
Katsumi Hanamoto ◽  
Hiroyuki Suzuki ◽  
Takanori Katoh ◽  
Muneo Sasaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Low Resistivity

Indium tin oxide films with low resistivity and low internal stress

2003 ◽  
Vol 21 (4) ◽  
pp. 1351-1354 ◽  
Author(s):  
Shinji Takayama ◽  
Toshifumi Sugawara ◽  
Akira Tanaka ◽  
Tokuji Himuro
Keyword(s):  
Internal Stress ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Oxide Films ◽  
Low Resistivity ◽  
Tin Oxide Films

Optical Degradation of Indium Tin Oxide Thin Films Induced by Hydrogen-Related Room Temperature Reduction

2003 ◽  
Vol 42 (Part 2, No. 5B) ◽  
pp. L546-L548 ◽  
Author(s):  
Yu Wang ◽  
Wan Ping Chen ◽  
Kei Chun Cheng ◽  
Helen Lai Wah Chan ◽  
Chung Loong Choy
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Oxide Thin Films ◽  
Temperature Reduction

scholarly journals Water-Based Indium Tin Oxide Nanoparticle Ink for Printed Toluene Vapours Sensor Operating at Room Temperature

Sensors ◽  
2018 ◽  
Vol 18 (10) ◽  
pp. 3246 ◽  
Author(s):  
Jan Maslik ◽  
Ivo Kuritka ◽  
Pavel Urbanek ◽  
Petr Krcmar ◽  
Pavol Suly ◽  
...  
Keyword(s):  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Ambient Air ◽  
Protective Atmosphere ◽  
Baseline Drift ◽  
Nanoparticle Dispersions ◽  
Treatment Conditions ◽  
Water Based ◽  
Different Temperatures

This study is focused on the development of water-based ITO nanoparticle dispersions and ink-jet fabrication methodology of an indium tin oxide (ITO) sensor for room temperature operations. Dimensionless correlations of material-tool-process variables were used to map the printing process and several interpretational frameworks were re-examined. A reduction of the problem to the Newtonian fluid approach was applied for the sake of simplicity. The ink properties as well as the properties of the deposited layers were tested for various nanoparticles loading. High-quality films were prepared and annealed at different temperatures. The best performing material composition, process parameters and post-print treatment conditions were used for preparing the testing sensor devices. Printed specimens were exposed to toluene vapours at room temperature. Good sensitivity, fast responses and recoveries were observed in ambient air although the n-type response mechanism to toluene is influenced by moisture in air and baseline drift was observed. Sensing response inversion was observed in an oxygen and moisture-free N2 atmosphere which is explained by the charge-transfer mechanism between the adsorbent and adsorbate molecules. The sensitivity of the device was slightly better and the response was stable showing no drifts in the protective atmosphere.

scholarly journals Optimization Preparation of Indium Tin Oxide Nanoparticles via Microemulsion Method Using Orthogonal Experiment

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1387
Author(s):  
Zhucheng Jiang ◽  
Ting Liu ◽  
Xiaoyu Zhai ◽  
Jiaxiang Liu
Keyword(s):  
Calcination Temperature ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Orthogonal Experiment ◽  
Transparent Conducting Oxide ◽  
Molar Ratio ◽  
Experimental Conditions ◽  
Microemulsion Method ◽  
Low Resistivity ◽  
Ito Nanoparticles

Indium tin oxide (ITO), an experimentally friendly transparent conducting oxide (TCO), has attracted great attention in the photoelectric field due to its intrinsically low resistivity and high transparency. In this work, the experimental conditions of preparing ITO nanoparticles using the microemulsion method were optimized by an orthogonal experiment. The optimal experimental conditions were obtained: mass ratio of the surfactant (AEO-3, MOA-5), a co-surfactant (n-propyl alcohol) of 5:3, molar ratio of indium and ammonia of 1:20, calcination temperature of 700 °C and calcination time of 4 h. Subsequently, the influence from process variables on the resistivity was researched systematically. The results demonstrated that the calcination temperature had a great effect on the resistivity; the resistivity reduced from 11.28 to 2.72 Ω·cm with the increase in the calcination temperature from 500 to 700 °C. Ultimately, ITO nanoparticles were prepared and systematically characterized under the optimal experimental conditions. The particles with a size of 60 nm were attributed to the cubic ITO crystal phase and showed low resistivity of 0.3675 Ω·cm. Significantly, ITO nanoparticles with low resistivity were obtained using the microemulsion method, which has potential application in the field of ITO nanoparticle preparation.

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