Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition

1996 ◽  
Vol 53 (24) ◽  
pp. 16425-16428 ◽  
Author(s):  
M. O. Manasreh
Keyword(s):  
Chemical Vapor Deposition ◽  
Optical Absorption ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Band Edge ◽  
Metalorganic Chemical

Photoreflectance Study of Gan Film Grown by Metalorganic Chemical Vapor Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
K. Yang ◽  
R. Zhang ◽  
Y. D. Zheng ◽  
L. H. Qin ◽  
B. Shen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Optical Absorption ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Optical Absorption Edge ◽  
Surface Field ◽  
Gan Film ◽  
Metalorganic Chemical

AbstractPhotoreflectance was used to study the optical properties of single crystal hexagonal GaN film on (0001) sapphire substrate grown by metalorganic chemical vapor deposition. The energy gap of GaN was determined as 3.400 eV, and the possible origin of the PR signal was attributed to the modulation of the surface field and lineshape broadening of defects. Optical absorption and cathodoluminescence of the GaN sample were measured, and the optical absorption edge of 3.39 eV and the cathodoluminescence emission peak of 3.461 eV at low temperature (15.6K) confirmed the results of Photoreflectance.

Nitride-Rich Hexagonal GaNP Growth Using Metalorganic Chemical Vapor Deposition

2000 ◽  
Vol 639 ◽  
Author(s):  
Seikoh Yoshida ◽  
Yoshiteru Itoh ◽  
Junjiroh Kikawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Band Edge ◽  
Band Edge Emission ◽  
Edge Emission ◽  
Different Temperatures ◽  
Metalorganic Chemical

ABSTRACTThe growth of GaNP using laser-assisted metalorganic chemical vapor deposition (LA-MOCVD) was carried out for the fabrication of a light-emitting diode (LED). We used an Ar-F laser in order to decompose the source gases at lower temperatures. Trimethylgallium (TMG), ammonia (NH3) and tertialybuthylphosphine (TBP) were used for the growth. GaNP growth was carried out at different temperatures. After that, annealing was carried out at 1273-1373 K to improve the crystal quality.As a result, N-rich GaNP could be grown at 1123-1223 K. The surface morphologies of GaNP were improved when the growth temperature was increased to above 1173 K. We investigated the photoluminescence (PL) of GaNP. The band-edge emission of GaNP was observed at 77 K upon applying thermal annealing at 1323 K. This peak shifted to about 0.2 eV compared with the GaN band-edge emission. Furthermore, a GaNP LED was fabricated and the electoluminescence spectra were investigated. The band-edge emission at 420 nm was observed.

scholarly journals Metalorganic chemical vapor deposition of InN quantum dots and nanostructures

2021 ◽  
Vol 10 (1) ◽  
Author(s):  
Caroline E. Reilly ◽  
Stacia Keller ◽  
Shuji Nakamura ◽  
Steven P. DenBaars
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Near Infrared ◽  
Optoelectronic Devices ◽  
Chemical Vapor ◽  
Electromagnetic Spectrum ◽  
Material System ◽  
Metalorganic Chemical

AbstractUsing one material system from the near infrared into the ultraviolet is an attractive goal, and may be achieved with (In,Al,Ga)N. This III-N material system, famous for enabling blue and white solid-state lighting, has been pushing towards longer wavelengths in more recent years. With a bandgap of about 0.7 eV, InN can emit light in the near infrared, potentially overlapping with the part of the electromagnetic spectrum currently dominated by III-As and III-P technology. As has been the case in these other III–V material systems, nanostructures such as quantum dots and quantum dashes provide additional benefits towards optoelectronic devices. In the case of InN, these nanostructures have been in the development stage for some time, with more recent developments allowing for InN quantum dots and dashes to be incorporated into larger device structures. This review will detail the current state of metalorganic chemical vapor deposition of InN nanostructures, focusing on how precursor choices, crystallographic orientation, and other growth parameters affect the deposition. The optical properties of InN nanostructures will also be assessed, with an eye towards the fabrication of optoelectronic devices such as light-emitting diodes, laser diodes, and photodetectors.

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