Influence of the Growth Atmosphere on the Properties of AIN Grown by Plasma - Assisted Pulsed Laser Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
T. Ogawa ◽  
M. Okamoto ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Nitrogen Gas ◽  
Growth Atmosphere ◽  
Cathodoluminescence Study

AbstractWe have grown highly oriented aluminum nitride (AIN) thin films on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. Three different growth environments, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of the ambient on the film quality. Rutherford backscattering spectrometry suggests that the N/Al ratio increases when the AIN film is grown in a nitrogen-contained ambient. Cathodoluminescence study implies the decrease of oxygen content in the film grown in a nitrogen plasma ambient.

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Aluminum nitride thin films prepared by radical-assisted pulsed laser deposition

Vacuum ◽  
2000 ◽  
Vol 59 (2-3) ◽  
pp. 649-656 ◽  
Author(s):  
M Ishihara ◽  
K Yamamoto ◽  
F Kokai ◽  
Y Koga
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

2017 ◽  
Vol 394 ◽  
pp. 197-204 ◽  
Author(s):  
K. Antonova ◽  
L. Duta ◽  
A. Szekeres ◽  
G.E. Stan ◽  
I.N. Mihailescu ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Pulse ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Pulse Frequency ◽  
Laser Deposition

Growth of AIN thin films on (111) and (100) silicon by pulsed laser deposition in nitrogen plasma ambient

1997 ◽  
Vol 6 (8) ◽  
pp. 1015-1018 ◽  
Author(s):  
Tetsuya Ogawa ◽  
Mitsuo Okamoto ◽  
Yap Yoke Khin ◽  
Yusuke Mori ◽  
Akimitsu Hatta ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition

Epitaxial aluminum nitride thin films grown by pulsed laser deposition in various nitrogen ambients

2000 ◽  
Vol 9 (3-6) ◽  
pp. 516-519 ◽  
Author(s):  
M Okamoto ◽  
M Yamaoka ◽  
Y.K Yap ◽  
M Yoshimura ◽  
Y Mori ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition
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