Growth of high-ksilicon oxynitride thin films by means of a pulsed laser deposition-atomic nitrogen plasma source hybrid system for gate dielectric applications

2003 ◽  
Vol 94 (9) ◽  
pp. 5969-5975 ◽  
Author(s):  
E. Desbiens ◽  
M. A. El Khakani
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Hybrid System ◽  
Gate Dielectric ◽  
Pulsed Laser ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Atomic Nitrogen

Mechanical and Chemical Properties of CBxNy and CSixNy Thin Films Grown by N*-Plasma Assisted Pulsed Laser Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
T. Thärigen ◽  
V. Riede ◽  
G. Lippold ◽  
E. Hartmann ◽  
R. Hesse ◽  
...  
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Properties ◽  
Plasma Source ◽  
Laser Deposition ◽  
Lower Amount ◽  
Rf Plasma ◽  
Clear Correlation

ABSTRACTCarbon silicon nitride (CSixNy), and carbon boron nitride (CBxNy) thin films have been grown by pulsed laser deposition (PLD) of various carbon (silicon/boron) (nitride) targets using an additional nitrogen RF plasma source on [100] oriented silicon substrates without additional heating. The CSixNy and CBxNy thin films were amorphous and showed nano hardness up to 23 GPa compared to 14 GPa for silicon and maximum nitrogen content of 30 at%. The maximum nanohardness was achieved for 10% Si and 10% B content in the films. The lower hardness of this films compared to the nanohardness of 30-50 GPa of DLC films indicates a lower amount of covalent carbon-nitrogen bonding in the films. However, in contrast to DLC films, the CSixNy and CBxNy films can be grown to thickness above 3 μm due to lower internal compressive stress. XPS of CSixNy and CBxNy film surfaces shows clear correlation of binding energy and intensity of N ls, C ls, and Si 2p peaks to composition of the PLD-targets and to nitrogen flow through plasma source, indicating soft changes of binding structure due to variation of PLD parameters. The results demonstrate the capability of the plasma assisted PLD process to deposit hard amorphous CSixNy, and CBxNy thin films with adjustable properties.

Influence of the Growth Atmosphere on the Properties of AIN Grown by Plasma - Assisted Pulsed Laser Deposition

1996 ◽  
Vol 423 ◽  
Author(s):  
T. Ogawa ◽  
M. Okamoto ◽  
Y. Mori ◽  
T. Sasaki
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Nitrogen Gas ◽  
Growth Atmosphere ◽  
Cathodoluminescence Study

AbstractWe have grown highly oriented aluminum nitride (AIN) thin films on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. Three different growth environments, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of the ambient on the film quality. Rutherford backscattering spectrometry suggests that the N/Al ratio increases when the AIN film is grown in a nitrogen-contained ambient. Cathodoluminescence study implies the decrease of oxygen content in the film grown in a nitrogen plasma ambient.

Growth of AIN thin films on (111) and (100) silicon by pulsed laser deposition in nitrogen plasma ambient

1997 ◽  
Vol 6 (8) ◽  
pp. 1015-1018 ◽  
Author(s):  
Tetsuya Ogawa ◽  
Mitsuo Okamoto ◽  
Yap Yoke Khin ◽  
Yusuke Mori ◽  
Akimitsu Hatta ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition

Observation of zincblend phase in InN thin films grown on sapphire by nitrogen plasma-assisted pulsed laser deposition

2002 ◽  
Vol 236 (1-3) ◽  
pp. 5-9 ◽  
Author(s):  
P Bhattacharya ◽  
T.K Sharma ◽  
S Singh ◽  
A Ingale ◽  
L.M Kukreja
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition

Pulsed laser deposition of aluminate YAlO3 and LaAlO3 thin films for alternative gate dielectric applications

2004 ◽  
Vol 80 (8) ◽  
pp. 1775-1779 ◽  
Author(s):  
J.-M. Liu ◽  
G.H. Shi ◽  
L.C. Yu ◽  
T.L. Li ◽  
Z.G. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Gate Dielectric ◽  
Pulsed Laser ◽  
Laser Deposition

scholarly journals Heteroepitaxial Growth of Perovskite CaTaO2N Thin Films by Nitrogen Plasma-Assisted Pulsed Laser Deposition

2013 ◽  
Vol 14 (1) ◽  
pp. 87-90 ◽  
Author(s):  
Daichi Oka ◽  
Yasushi Hirose ◽  
Tomoteru Fukumura ◽  
Tetsuya Hasegawa
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Plasma ◽  
Laser Deposition ◽  
Heteroepitaxial Growth
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