Influence of laser pulse frequency on the microstructure of aluminum nitride thin films synthesized by pulsed laser deposition

2017 ◽  
Vol 394 ◽  
pp. 197-204 ◽  
Author(s):  
K. Antonova ◽  
L. Duta ◽  
A. Szekeres ◽  
G.E. Stan ◽  
I.N. Mihailescu ◽  
...  
Vacuum ◽  
2000 ◽  
Vol 59 (2-3) ◽  
pp. 649-656 ◽  
Author(s):  
M Ishihara ◽  
K Yamamoto ◽  
F Kokai ◽  
Y Koga

1996 ◽  
Vol 423 ◽  
Author(s):  
T. Ogawa ◽  
M. Okamoto ◽  
Y. Mori ◽  
T. Sasaki

AbstractWe have grown highly oriented aluminum nitride (AIN) thin films on Si (100) substrates by using pulsed laser deposition from sintering AIN targets. Three different growth environments, vacuum, nitrogen gas, and nitrogen plasma, have been used in order to investigate the effect of the ambient on the film quality. Rutherford backscattering spectrometry suggests that the N/Al ratio increases when the AIN film is grown in a nitrogen-contained ambient. Cathodoluminescence study implies the decrease of oxygen content in the film grown in a nitrogen plasma ambient.


2000 ◽  
Vol 9 (3-6) ◽  
pp. 516-519 ◽  
Author(s):  
M Okamoto ◽  
M Yamaoka ◽  
Y.K Yap ◽  
M Yoshimura ◽  
Y Mori ◽  
...  

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