Approaches to High Temperature Contacts to Silicon Carbide

1996 ◽  
Vol 423 ◽  
Author(s):  
J. M. Delucca ◽  
S. E. Mohney
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperature ◽  
Transition Metal ◽  
Phase Equilibria ◽  
Periodic Table ◽  
Electrical Characteristics ◽  
Thermally Stable ◽  
Silicon Carbon ◽  
Metallurgical Reactions

AbstractMetallurgical reactions between contacts and SiC can alter the electrical characteristics of the contacts, either beneficially or detrimentally. Simultaneously, consumption of the underlying SiC epilayer takes place. During prolonged operation at elevated temperature, contacts that are not in thermodynamic equilibrium with SiC may continue to react with it. For this reason, interest in thermally stable carbide and silicide contacts to SiC has been growing. To select appropriate carbides or silicides for further study, however, knowledge of the transition metal-silicon-carbon (TM-Si-C) phase equilibria is required. A significant body of literature on the TM-Si-C systems exists and should therefore be examined in the context of electronic applications. In this paper, phase equilibria for representative TM-Si-C systems are presented, trends in these systems with respect to temperature and position of the metal in the periodic table are discussed, and attractive carbide and silicide contacts and processing schemes for thermally stable contacts are highlighted.

scholarly journals Characterization and Comparison of 1.2kV SiC Power Devices from Cryogenic to High Temperature

2015 ◽  
Vol 821-823 ◽  
pp. 814-817 ◽  
Author(s):  
Thibaut Chailloux ◽  
Cyril Calvez ◽  
Dominique Tournier ◽  
Dominique Planson
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Characteristics ◽  
Power Devices ◽  
Effects Of Temperature

The aim of this study consists in comparing effects of temperature on various Silicon Carbide power devices. Static and dynamic electrical characteristics have been measured for temperatures from 80K to 525K.

300C Capable Digital Integrated Circuits in SiC Technology

2012 ◽  
Vol 717-720 ◽  
pp. 1261-1264 ◽  
Author(s):  
Amita Patil ◽  
Naresh Rao ◽  
Vinayak Tilak
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Continuous Operation ◽  
Shift Register ◽  
Digital Integrated Circuits ◽  
Enhancement Mode

This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register and ripple counter. All circuits are functional from room temperature up to 300C without any notable degradation in performance at elevated temperature. The 4-bit counter demonstrated stable behavior for over 500 hours of continuous operation at 300C.

Metallurgical Study of Contacts to Gallium Nitride

1995 ◽  
Vol 395 ◽  
Author(s):  
S.E. Mohney ◽  
B.P. Luther ◽  
T.N. Jackson ◽  
M.A. Khan
Keyword(s):  
Phase Equilibria ◽  
Photoelectron Spectroscopy ◽  
Thermally Stable ◽  
X Ray Diffraction ◽  
X Ray ◽  
Potential Contact ◽  
Metallurgical Study ◽  
Metallurgical Reactions ◽  
Further Development

ABSTRACTThermally stable contacts to GaN that also have desirable electrical characteristics are required for the further development of optoelectronic and high temperature devices based on GaN. To make improvements on existing contacts or to develop new ones, information on the metallurgy of potential contact systems is needed. In this work, the Metal-Ga-N ternary phase equilibria and the contact metallurgy are examined for Ti, Re, and Ni. Annealed contacts of these metals have been examined with x-ray diffraction and/or x-ray photoelectron spectroscopy, and the observed metallurgical reactions are discussed in light of estimated or experimentally determined Metal-Ga-N phase diagrams. Particular attention is paid to the gas phase equilibria and the role of the annealing environment on the metallurgical reactions. Finally, the consequences of this work for the design of thermally stable contacts are considered.

Nitrogen implanted SiC: Correlation of channeling and electrical studies

1976 ◽  
Vol 54 (6) ◽  
pp. 626-632 ◽  
Author(s):  
D. A. Thompson ◽  
M. C. Chan ◽  
A. B. Campbell
Keyword(s):  
Silicon Carbide ◽  
Surface Layer ◽  
High Temperature ◽  
Elevated Temperature ◽  
Reasonable Agreement ◽  
Electrical Studies ◽  
Anneal Temperature

A study has been made of silicon carbide implanted with nitrogen at an elevated temperature (450 °C) using channeling techniques and electrical (C–V) measurements. Results indicate the formation of a PIN structure after high temperature anneals. The buried insulating region is related to a buried damaged layer, both of which decrease in thickness with increasing anneal temperature. In a thin (~ 100 Å) surface layer, 20–30% of the implanted nitrogen atoms became electrically active. This is shown to be in reasonable agreement with a measured average 'substitutional' percentage of 50% throughout the implanted layer.

Thermally Stable Poled Polymers: Highly Efficient Heteroaromatic Chromophores In High Temperature Polyimides

1993 ◽  
Vol 328 ◽  
Author(s):  
Alex K-Y. Jen ◽  
K. Y. Wong ◽  
V. Pushkara Rao ◽  
K. Drost ◽  
Y. M. Cai ◽  
...  
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Functional Groups ◽  
Optical Activity ◽  
Nonlinear Optical ◽  
Temporal Stability ◽  
Thermally Stable ◽  
Electro Optic ◽  
Recent Developments

ABSTRACTIn this paper, we report our recent developments in achieving thermally stable polyimides that possess large second order nonlinear optical activity. We have developed several classes of novel chromophores based on the combination of efficient thiophene conjugating units and novel electron-donating and electron-accepting functional groups. Through these developments, we have synthesized chromophores that possess non-resonant βμ values as high as 9,100 × 10−48 esu measured at 1.9 μm. These chromophores also possess improved thermal and chemical stabilities. The incorporation of these chromophores in high temperature polyimides produces E-O Materials with high linear electro-optic coefficients (in excess of 15 pm/V at 1.3 μm) and long-term temporal stability at an elevated temperature of 150°C for more than 800 hours.

Microstructural characterization of a rapidly solidified Al-Fe-V-Si alloy for elevated temperature applications

1988 ◽  
Vol 46 ◽  
pp. 550-551
Author(s):  
R. E. Franck ◽  
J. A. Hawk ◽  
G. J. Shiflet
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Grain Growth ◽  
Volume Fraction ◽  
Microstructural Characterization ◽  
Second Phase ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Temperature Applications

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.

Electron energy loss near edge structures of intermetallic alloys and grain boundaries in NiAl

1996 ◽  
Vol 54 ◽  
pp. 522-523
Author(s):  
G.A. Botton ◽  
C.J. Humphreys
Keyword(s):  
High Temperature ◽  
Transition Metal ◽  
Energy Loss ◽  
Grain Boundaries ◽  
Industrial Applications ◽  
Edge Structure ◽  
Structural Applications ◽  
Yield Behaviour ◽  
Late Transition ◽  
Metal Aluminides

Transition metal aluminides are of great potential interest for high temperature structural applications. Although these materials exhibit good mechanical properties at high temperature, their use in industrial applications is often limited by their intrinsic room temperature brittleness. Whilst this particular yield behaviour is directly related to the defect structure, the properties of the defects (in particular the mobility of dislocations and the slip system on which these dislocations move) are ultimately determined by the electronic structure and bonding in these materials. The lack of ductility has been attributed, at least in part, to the mixed bonding character (metallic and covalent) as inferred from ab-initio calculations. In this work, we analyse energy loss spectra and discuss the features of the near edge structure in terms of the relevant electronic states in order to compare the predictions on bonding directly with spectroscopic experiments. In this process, we compare spectra of late transition metal (TM) to early TM aluminides (FeAl and TiAl) to assess whether differences in bonding can also be detected. This information is then discussed in terms of bonding changes at grain boundaries in NiAl.

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