Nitrogen implanted SiC: Correlation of channeling and electrical studies

1976 ◽  
Vol 54 (6) ◽  
pp. 626-632 ◽  
Author(s):  
D. A. Thompson ◽  
M. C. Chan ◽  
A. B. Campbell
Keyword(s):  
Silicon Carbide ◽  
Surface Layer ◽  
High Temperature ◽  
Elevated Temperature ◽  
Reasonable Agreement ◽  
Electrical Studies ◽  
Anneal Temperature

A study has been made of silicon carbide implanted with nitrogen at an elevated temperature (450 °C) using channeling techniques and electrical (C–V) measurements. Results indicate the formation of a PIN structure after high temperature anneals. The buried insulating region is related to a buried damaged layer, both of which decrease in thickness with increasing anneal temperature. In a thin (~ 100 Å) surface layer, 20–30% of the implanted nitrogen atoms became electrically active. This is shown to be in reasonable agreement with a measured average 'substitutional' percentage of 50% throughout the implanted layer.

300C Capable Digital Integrated Circuits in SiC Technology

2012 ◽  
Vol 717-720 ◽  
pp. 1261-1264 ◽  
Author(s):  
Amita Patil ◽  
Naresh Rao ◽  
Vinayak Tilak
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperature ◽  
Integrated Circuits ◽  
Room Temperature ◽  
Continuous Operation ◽  
Shift Register ◽  
Digital Integrated Circuits ◽  
Enhancement Mode

This paper pertains to development of high temperature capable digital integrated circuits in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology. Among the circuits developed in this work are data latch, flip flops, 4-bit shift register and ripple counter. All circuits are functional from room temperature up to 300C without any notable degradation in performance at elevated temperature. The 4-bit counter demonstrated stable behavior for over 500 hours of continuous operation at 300C.

Approaches to High Temperature Contacts to Silicon Carbide

1996 ◽  
Vol 423 ◽  
Author(s):  
J. M. Delucca ◽  
S. E. Mohney
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Elevated Temperature ◽  
Transition Metal ◽  
Phase Equilibria ◽  
Periodic Table ◽  
Electrical Characteristics ◽  
Thermally Stable ◽  
Silicon Carbon ◽  
Metallurgical Reactions

AbstractMetallurgical reactions between contacts and SiC can alter the electrical characteristics of the contacts, either beneficially or detrimentally. Simultaneously, consumption of the underlying SiC epilayer takes place. During prolonged operation at elevated temperature, contacts that are not in thermodynamic equilibrium with SiC may continue to react with it. For this reason, interest in thermally stable carbide and silicide contacts to SiC has been growing. To select appropriate carbides or silicides for further study, however, knowledge of the transition metal-silicon-carbon (TM-Si-C) phase equilibria is required. A significant body of literature on the TM-Si-C systems exists and should therefore be examined in the context of electronic applications. In this paper, phase equilibria for representative TM-Si-C systems are presented, trends in these systems with respect to temperature and position of the metal in the periodic table are discussed, and attractive carbide and silicide contacts and processing schemes for thermally stable contacts are highlighted.

Microstructural characterization of a rapidly solidified Al-Fe-V-Si alloy for elevated temperature applications

1988 ◽  
Vol 46 ◽  
pp. 550-551
Author(s):  
R. E. Franck ◽  
J. A. Hawk ◽  
G. J. Shiflet
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Grain Growth ◽  
Volume Fraction ◽  
Microstructural Characterization ◽  
Second Phase ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Temperature Applications

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.

UDIMET 41

Alloy Digest ◽  
1964 ◽  
Vol 13 (6) ◽  
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Physical Properties ◽  
Precipitation Hardening ◽  
Base Alloy ◽  
Heat Treating ◽  
Nickel Base Alloy ◽  
Temperature Performance ◽  
Nickel Base ◽  
Corrosion And Oxidation

Abstract UDIMET 41 is a vacuum induction melted precipitation hardening nickel-base alloy having outstanding room and elevated temperature properties. It possesses excellent corrosion and oxidation resistance. It is designed for highly stressed components operating in the 1400-1700 deg F temperature range. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as creep. It also includes information on low and high temperature performance as well as forming, heat treating, machining, and joining. Filing Code: Ni-92. Producer or source: Special Metals Inc..

DURALCAN F3S.xxS

Alloy Digest ◽  
1994 ◽  
Vol 43 (10) ◽  
Keyword(s):  
Fracture Toughness ◽  
Silicon Carbide ◽  
Compressive Strength ◽  
Aluminum Alloy ◽  
High Temperature ◽  
Base Alloy ◽  
Alloy Matrix ◽  
Reinforced Composite ◽  
Temperature Performance ◽  
Aluminum Alloy Matrix

Abstract Duralcan F3S.xxS is a heat treatable aluminum alloy-matrix gravity composite. The base alloy is similar to Aluminum 359 (Alloy Digest Al-188, July 1969); the discontinuously reinforced composite is silicon carbide. This datasheet provides information on composition, physical properties, hardness, elasticity, tensile properties, and compressive strength as well as fracture toughness and fatigue. It also includes information on high temperature performance. Filing Code: AL-329. Producer or source: Alcan Aluminum Corporation.

MO-RE 40MA

Alloy Digest ◽  
1998 ◽  
Vol 47 (12) ◽  
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Oxidation Resistance ◽  
Creep Strength ◽  
Heat Resistant Alloy ◽  
Resistant Alloy ◽  
Heat Resistant ◽  
Temperature Performance

Abstract MO-RE 40MA is a fully austenitic heat-resistant alloy for elevated temperature applications. The alloy is microalloyed for creep strength and oxidation resistance. This datasheet provides information on composition, physical properties, and tensile properties as well as creep. It also includes information on high temperature performance. Filing Code: Ni-548. Producer or source: Duraloy Technologies Inc.

UDDEHOLM QRO 80 MICRODIZED

Alloy Digest ◽  
1987 ◽  
Vol 36 (12) ◽  
Keyword(s):  
Fracture Toughness ◽  
High Temperature ◽  
Elevated Temperature ◽  
Physical Properties ◽  
Tensile Properties ◽  
Tool Steel ◽  
Die Casting ◽  
Heat Treating ◽  
Temperature Performance ◽  
Improved Performance

Abstract UHB QRO 80 MICRODIZED is a chromium-molybdenum-vanadium tool steel with improved performance for tooling used at elevated temperature as in forging, extrusion and die casting. It is electro-slag refined. This datasheet provides information on composition, physical properties, hardness, elasticity, and tensile properties as well as fracture toughness. It also includes information on high temperature performance as well as forming, heat treating, machining, and joining. Filing Code: TS-486. Producer or source: Uddeholm Aktiebolag.

J&L TYPE 309

Alloy Digest ◽  
2003 ◽  
Vol 52 (12) ◽  
Keyword(s):  
Stainless Steel ◽  
Corrosion Resistance ◽  
High Temperature ◽  
Elevated Temperature ◽  
Physical Properties ◽  
Heat Treating ◽  
Good Combination ◽  
Resistance To Oxidation ◽  
Cold Worked ◽  
Specialty Steel

Abstract Type 309 (UNS S30900) is an austenitic chromium-nickel stainless steel widely used for elevated-temperature services. It has a good combination of oxidation resistance and corrosion-resisting properties. The alloy is essentially nonmagnetic when annealed and become slightly magnetic when cold worked. It is intended primarily for high-temperature applications at 816 deg C (1500 deg F) or higher where resistance to oxidation and/or corrosion is required. This datasheet provides information on composition, physical properties, hardness, and tensile properties as well as creep. It also includes information on corrosion resistance as well as forming, heat treating, and joining. Filing Code: SS-896. Producer or source: J & L Specialty Steel Inc.

Silicon Carbide Die Attach Scheme for 500°C Operation

2000 ◽  
Vol 622 ◽  
Author(s):  
Liang-Yu Chen ◽  
Gary W. Hunter ◽  
Philip G. Neudeck
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Electrical Resistance ◽  
Room Temperature ◽  
Semiconductor Devices ◽  
Single Crystal Silicon ◽  
Film Material ◽  
Crystal Silicon ◽  
Pure Alumina ◽  
Die Attach

ABSTRACTSingle crystal silicon carbide (SiC) has such excellent physical, chemical, and electronic properties that SiC based semiconductor electronics can operate at temperatures in excess of 600°C well beyond the high temperature limit for Si based semiconductor devices. SiC semiconductor devices have been demonstrated to be operable at temperatures as high as 600°C, but only in a probe-station environment partially because suitable packaging technology for high temperature (500°C and beyond) devices is still in development. One of the core technologies necessary for high temperature electronic packaging is semiconductor die-attach with low and stable electrical resistance. This paper discusses a low resistance die-attach method and the results of testing carried out at both room temperature and 500°C in air. A 1 mm2 SiC Schottky diode die was attached to aluminum nitride (AlN) and 96% pure alumina ceramic substrates using precious metal based thick-film material. The attached test die using this scheme survived both electronically and mechanically performance and stability tests at 500°C in oxidizing environment of air for 550 hours. The upper limit of electrical resistance of the die-attach interface estimated by forward I-V curves of an attached diode before and during heat treatment indicated stable and low attach-resistance at both room-temperature and 500°C over the entire 550 hours test period. The future durability tests are also discussed.

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