Erbium Doped Silicon for Light Emitting Devices

1996 ◽  
Vol 422 ◽  
Author(s):  
J. Michel ◽  
B. Zheng ◽  
J. Palm ◽  
E. Ouellette ◽  
F. Gan ◽  
...  
Keyword(s):  
System Performance ◽  
Optical Transmission ◽  
Cmos Technology ◽  
Transmission System ◽  
Auger Process ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Excitation Processes

AbstractWe report on the excitation and de-excitation processes of erbium implanted in silicon and the integration of Si:Er light emitting devices (LED) with standard CMOS technology. We find two deexcitation processes, an Auger process below 100 K and a phonon mediated energy backtransfer above 100 K. We present the first optical voice link with a silicon LED as the emitter. Optical transmission system performance with our LED is possible below 200 K.

Erbium-doped silicon light-emitting devices

1998 ◽  
Author(s):  
Thomas D. Chen ◽  
Anuradha Agarwal ◽  
Laura M. Giovane ◽  
James S. Foresi ◽  
Ling Liao ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Erbium Doped ◽  
Doped Silicon

Sensitized electroluminescence from erbium doped silicon rich oxynitride light emitting devices

2021 ◽  
Vol 235 ◽  
pp. 118009
Author(s):  
Lingo Xu ◽  
Hongjing Piao ◽  
Zhiyuan Liu ◽  
Can Cui ◽  
Deren Yang
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Erbium Doped ◽  
Doped Silicon

Fiber nonlinearity compensation using optical phase conjugation in dispersion-managed coherent transmission systems

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Jinqing Hao ◽  
Bingchen Han
Keyword(s):  
Performance Improvement ◽  
System Performance ◽  
Optical Transmission ◽  
Phase Conjugation ◽  
Fiber Amplifiers ◽  
Transmission Systems ◽  
Fiber Nonlinearity ◽  
Erbium Doped ◽  
Significant Performance ◽  
Transmission Link

Abstract In the discretely amplified transmission systems with erbium-doped fiber amplifiers, the system performance of nonlinearity-compensated optical transmission based on pre-dispersed spectral inversion (PSI) is investigated numerically. We find that PSI offers more significant performance improvement in dispersion-managed (DM) links than that in non-dispersion-managed (noDM) links. On the other hand, the DM link is more sensitive to the span offset from the center of the transmission link than noDM link. The performance difference between DM and noDM links is 1 dB if the span offset equals four spans in 20 × 90 km nonlinear transmission. Furthermore, we show that for the dispersion-managed transmission, in order to obtain the best system performance, the amount of pre-dispersion of the PSI, should be optimized over different dispersion maps.

scholarly journals Electroluminescence from light-emitting devices based on erbium-doped ZnO/n-Si heterostructures: Enhancement effect of fluorine co-doping

2019 ◽  
Vol 27 (21) ◽  
pp. 30919 ◽  
Author(s):  
Jinxin Chen ◽  
Weijun Zhu ◽  
Yuhan Gao ◽  
Deren Yang ◽  
Xiangyang Ma
Keyword(s):  
Enhancement Effect ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Co Doping ◽  
Erbium Doped ◽  
Doped Zno

Study on the Optical Transmission Properties of One-Dimensional Photonic Crystal of MoS2

2014 ◽  
Vol 1056 ◽  
pp. 42-46 ◽  
Author(s):  
Kai Wu ◽  
Wei Xia Gu ◽  
Chen Wu ◽  
Jin Lou Ma ◽  
Xi Ying Ma
Keyword(s):  
Photonic Crystal ◽  
Dielectric Layer ◽  
Optical Transmission ◽  
Band Gaps ◽  
Light Emitting ◽  
One Dimensional ◽  
Light Emitting Devices ◽  
Light Transfer ◽  
Transfer Properties ◽  
Photonic Band

We designed MoS2/SiO2one-dimensional (1D) photonic crystal using the concept of photonic crystal and investigated the light transfer properties by means of transfer-matrix method. We found that the transfer properties of photonic crystal can be modified by the period of photonic crystal, the thickness of dielectric layer, and the number of the defect layers. The number of photonic band gaps (PBGs) reduces with the decrease of the thickness of dielectric layer, and the position of PBGs in the spectra rapidly moves to short wavelength direction. For defect photonic crystal, the width of the PBGs obviously become larger, and the transmittance spectra oscillate more intensely, similar to the characteristics of Bragg gratings. These properties will give good instructor for the preparation of 1D MoS2quantum well light emitting devices and solar cells.

Light-emitting devices in industrial CMOS technology

1993 ◽  
Vol 37-38 ◽  
pp. 527-533 ◽  
Author(s):  
J. Kramer ◽  
P. Seitz ◽  
E.F. Steigmeier ◽  
H. Auderset ◽  
B. Delley ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Light Emitting ◽  
Light Emitting Devices

Si-based erbium-doped light-emitting devices

2006 ◽  
Vol 121 (2) ◽  
pp. 187-192 ◽  
Author(s):  
Maria Eloisa Castagna ◽  
Anna Muscará ◽  
Salvatore Leonardi ◽  
Salvatore Coffa ◽  
Liliana Caristia ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Erbium Doped

Light-emitting devices based on erbium-doped TiO2/p+-Si heterostructures: Engineering of electroluminescence via aluminum co-doping

2013 ◽  
Vol 102 (2) ◽  
pp. 021108 ◽  
Author(s):  
Yang Yang ◽  
Yunpeng Li ◽  
Lu Jin ◽  
Xiangyang Ma ◽  
Deren Yang
Keyword(s):  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Co Doping ◽  
Erbium Doped

scholarly journals Electroluminescence from light-emitting devices with erbium-doped TiO2 films: Enhancement effect of yttrium codoping

2016 ◽  
Vol 120 (16) ◽  
pp. 163104 ◽  
Author(s):  
Miaomiao Jiang ◽  
Chen Zhu ◽  
Junwei Zhou ◽  
Jinxin Chen ◽  
Yuhan Gao ◽  
...  
Keyword(s):  
Enhancement Effect ◽  
Tio2 Films ◽  
Light Emitting ◽  
Doped Tio2 ◽  
Light Emitting Devices ◽  
Erbium Doped

scholarly journals Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

2014 ◽  
Vol 116 (8) ◽  
pp. 083103 ◽  
Author(s):  
J. M. Ramírez ◽  
S. Cueff ◽  
Y. Berencén ◽  
C. Labbé ◽  
B. Garrido
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Doped Silicon ◽  
Silicon Excess ◽  
Er Doped
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