scholarly journals Role of silicon excess in Er-doped silicon-rich nitride light emitting devices at 1.54 μm

2014 ◽  
Vol 116 (8) ◽  
pp. 083103 ◽  
Author(s):  
J. M. Ramírez ◽  
S. Cueff ◽  
Y. Berencén ◽  
C. Labbé ◽  
B. Garrido
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Doped Silicon ◽  
Silicon Excess ◽  
Er Doped

scholarly journals 154µm Er doped light emitting devices: Role of silicon content

2011 ◽  
Author(s):  
A. Tengattini ◽  
A. Marconi ◽  
A. Anopchenko ◽  
N. Prtljaga ◽  
L. Pavesi ◽  
...  
Keyword(s):  
Silicon Content ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Er Doped

Er-doped silicon nanowires with 1.54μm light-emitting and enhanced electrical and field emission properties

2007 ◽  
Vol 91 (9) ◽  
pp. 093133 ◽  
Author(s):  
C. T. Huang ◽  
C. L. Hsin ◽  
K. W. Huang ◽  
C. Y. Lee ◽  
P. H. Yeh ◽  
...  
Keyword(s):  
Field Emission ◽  
Silicon Nanowires ◽  
Light Emitting ◽  
Emission Properties ◽  
Field Emission Properties ◽  
Doped Silicon ◽  
Er Doped

Role of host excimer formation in the degradation of organic light-emitting devices

2020 ◽  
Vol 116 (6) ◽  
pp. 063302
Author(s):  
Robert Newcomb ◽  
John S. Bangsund ◽  
Kyle W. Hershey ◽  
Dominea C. K. Rathwell ◽  
Hong-Yeop Na ◽  
...  
Keyword(s):  
Light Emitting ◽  
Light Emitting Devices ◽  
Organic Light ◽  
Excimer Formation ◽  
Organic Light Emitting Devices

Non-Radiative Competition in the Excitation of Erbium Implanted Silicon Light Emitting Devices

1995 ◽  
Vol 392 ◽  
Author(s):  
T Taskin ◽  
Q Huda ◽  
A Scholes ◽  
J H Evans ◽  
A R Peaker ◽  
...  
Keyword(s):  
Threshold Current ◽  
Threshold Current Density ◽  
Extended Defects ◽  
Cross Sectional ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Radiative Processes ◽  
Luminescence Efficiency ◽  
High Concentrations

AbstractThis paper reports a study of the non-radiative processes competing with the excitation of the erbium ion in layers implanted with high concentrations of erbium and oxygen. These processes reduce the luminescence efficiency of the Si:Er system and dramatically increase the threshold current density calculated to be necessary for an ultimate goal, the Si/Ge:Er LASER. Using cross sectional TEM, photoluminescence as a function of temperature and DLTS, it is demonstrated that a two stage anneal procedure which avoids the formation of extended defects and removes specific deep states is necessary to obtain efficient Er3+ excitation at high erbium concentrations. Comparisons are made with damage resulting from germanium implantation into silicon. The role of multiple stage anneals is discussed in relation to the removal of Shockley-Hall-Read recombination centres

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