The Possible Mechanism of Excitation of the f - f Emission from Er-O Clusters in Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
V. F. Masterov ◽  
L. G. Gerchikov
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Forward Bias ◽  
Electron Trap ◽  
Electron Hole ◽  
Electron Level ◽  
Light Emitting ◽  
Trapped Electron ◽  
Hole Recombination

AbstractThe Er2O3 quantum dot (cluster) with dimensions about 1.2nm in silicon is discussed as the possible source of the Er related emission in Si:Er,O, excited by photogenerated carriers or in a light-emitting diodes (LED) at forward bias. This quantum dot is represented as a spherical quantum well 0.9eV in depth. The electron level with energy about 0.15eV below the bottom of the silicon conduction band plays role of an electron trap. The trapped electron interacts with a hole in valence band of silicon forming “indirect” exciton bonded to quantum well. The energy is transferred to f - shell of erbium by the Auger electron - hole recombination.

Quantum Dot Array LED Research with ZnO as an Electron Transport Layer

2013 ◽  
Vol 333-335 ◽  
pp. 1895-1898
Author(s):  
Jia Zhao ◽  
Xiao Yu Zhang ◽  
Yu Zhang ◽  
Yi Feng ◽  
Tie Qiang Zhang ◽  
...  
Keyword(s):  
Electron Transport ◽  
Quantum Dot ◽  
Transport Layer ◽  
Electron Transport Layer ◽  
Core Shell ◽  
Cdse Core ◽  
Electron Hole ◽  
Light Emitting ◽  
Light Stability ◽  
Hole Recombination

As a new light-emitting material, quantum dot having the advantages of other materials that can not be replaced. It is not only the fluorescence quantum yield, and light stability. Therefore, we use CdSe core-shell structure of the quantum dot LED devices as the electron-hole recombination layer. In this paper, we synthesized emission peak is located at 588nm CdSe core-shell quantum dots, and made array display LED devices with ZnO as the electron transport layer.

Role of Coulomb-correlated electron-hole pairs in ZnSe-based quantum-well diode lasers

1994 ◽  
Vol 50 (8) ◽  
pp. 5787-5790 ◽  
Author(s):  
J. Ding ◽  
M. Hagerott ◽  
P. Kelkar ◽  
A. V. Nurmikko ◽  
D. C. Grillo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Electron Hole ◽  
Correlated Electron

Influence of potential barrier materials on device performance

2002 ◽  
Vol 725 ◽  
Author(s):  
Z. Y. Xie ◽  
Y. Q. Li ◽  
T. C. Wong ◽  
F. L. Wong ◽  
M. K. Fung ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Power Efficiency ◽  
Device Performance ◽  
High Electron ◽  
Electron Hole ◽  
Light Emitting ◽  
Barrier Materials ◽  
Mobility Device ◽  
Luminance Efficiency ◽  
Hole Recombination

AbstractAn organic light-emitting device (OLED) having a double-heterostructure of ITO/NPB/DCMdoped Alq3/BCP/Alq3/MgAg was constructed to form a narrow recombination zone where both charge carriers and excitons are confined, thus resulting in efficient electron-hole recombination and energy transfer. It was found that though luminance efficiency was enhanced, the low electron mobility of BCP resulted in higher driving voltages and limited the improvement of power efficiency. Significant improvements on both quantum efficiency and power efficiency were achieved by replace 1,3,5-tri(phenyl-2-benzimidazoly)-benzene (TPBI) for BCP, and were correlated with its high electron mobility. Device performance was further improved in the structure ITO/NPB/DCM-doped Alq3/TPBI/LiF/MgAg with a maximum luminance efficiency 6.03cd/A and a power efficiency of 5.94 lm/W.

Optical Performance Characteristics of Light-Emitting Diodes Designed with Dip-Shaped InGaN/GaN Quantum well Structures

2013 ◽  
Vol 328 ◽  
pp. 845-849
Author(s):  
Seong Jun Kim ◽  
Chel Jong Choi ◽  
Hyun Soo Kim
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Spatial Separation ◽  
Wave Functions ◽  
Radiative Recombination Rate ◽  
Electron Hole ◽  
Light Emitting ◽  
Quantum Well Structures ◽  
Lower Temperature

A dip-shaped InGaN/GaN quantum well (QW) structure was computed to design efficient light-emitting diodes (LEDs). The advanced LEDs designed with the dip-shaped QW structures exhibited higher internal quantum efficiency by 26 % and the lower temperature-driven efficiency droop as compared to the reference LEDs. This could be due to the enhanced radiative recombination rate in the QW active region, which is associated with the reduced spatial separation of electron-hole wave functions.

Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes

2008 ◽  
Vol 29 (7) ◽  
pp. 711-713 ◽  
Author(s):  
Chun-Yuan Huang ◽  
Yan-Kuin Su ◽  
Ying-Chih Chen ◽  
Ping-Chieh Tsai ◽  
Cheng-Tien Wan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting
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