Hybrid CdSe-ZnS Quantum Dot-InGaN-GaN Quantum Well Red Light-Emitting Diodes

2008 ◽  
Vol 29 (7) ◽  
pp. 711-713 ◽  
Author(s):  
Chun-Yuan Huang ◽  
Yan-Kuin Su ◽  
Ying-Chih Chen ◽  
Ping-Chieh Tsai ◽  
Cheng-Tien Wan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting

scholarly journals Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure

2006 ◽  
Vol 18 (21) ◽  
pp. 2269-2271 ◽  
Author(s):  
Horng-Shyang Chen ◽  
Chih-Feng Lu ◽  
Dong-Ming Yeh ◽  
Chi-Feng Huang ◽  
Jian-Jang Huang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Light Emitting

Dual-color emitting quantum-dot-quantum-well CdSe-ZnS heteronanocrystals hybridized on InGaN∕GaN light emitting diodes for high-quality white light generation

2008 ◽  
Vol 92 (11) ◽  
pp. 113110 ◽  
Author(s):  
Sedat Nizamoglu ◽  
Evren Mutlugun ◽  
Tuncay Özel ◽  
Hilmi Volkan Demir ◽  
Sameer Sapra ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
White Light ◽  
Light Emitting Diodes ◽  
High Quality ◽  
Light Emitting ◽  
Dual Color ◽  
White Light Generation ◽  
Light Generation

Semipolar (202̄1) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage

2013 ◽  
Vol 52 (8S) ◽  
pp. 08JC08 ◽  
Author(s):  
Yoshinobu Kawaguchi ◽  
Chia-Yen Huang ◽  
Yuh-Renn Wu ◽  
Yuji Zhao ◽  
Steven P. DenBaars ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Red Light ◽  
Single Quantum ◽  
Forward Voltage ◽  
Single Quantum Well ◽  
Light Emitting

scholarly journals Emergence of Impurity-Doped Nanocrystal Light-Emitting Diodes

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1226
Author(s):  
Dongxiang Luo ◽  
Lin Wang ◽  
Ying Qiu ◽  
Runda Huang ◽  
Baiquan Liu
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
High Performance ◽  
Light Emitting Diodes ◽  
State Of The Art ◽  
Material Design ◽  
Light Emitting ◽  
Impurity Doped ◽  
Colloidal Quantum Dot ◽  
Increasing Demand

In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described.

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