Role of Coulomb-correlated electron-hole pairs in ZnSe-based quantum-well diode lasers

1994 ◽  
Vol 50 (8) ◽  
pp. 5787-5790 ◽  
Author(s):  
J. Ding ◽  
M. Hagerott ◽  
P. Kelkar ◽  
A. V. Nurmikko ◽  
D. C. Grillo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Diode Lasers ◽  
Electron Hole ◽  
Correlated Electron

scholarly journals Evidence of correlated electron hole pairs in dots in asymmetric quantum well structures

2010 ◽  
Vol 245 ◽  
pp. 012050 ◽  
Author(s):  
M H Abdellatif ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Nam Ki Cho ◽  
Jung Il Lee
Keyword(s):  
Quantum Well ◽  
Electron Hole ◽  
Quantum Well Structures ◽  
Correlated Electron ◽  
Asymmetric Quantum

The Possible Mechanism of Excitation of the f - f Emission from Er-O Clusters in Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
V. F. Masterov ◽  
L. G. Gerchikov
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Forward Bias ◽  
Electron Trap ◽  
Electron Hole ◽  
Electron Level ◽  
Light Emitting ◽  
Trapped Electron ◽  
Hole Recombination

AbstractThe Er2O3 quantum dot (cluster) with dimensions about 1.2nm in silicon is discussed as the possible source of the Er related emission in Si:Er,O, excited by photogenerated carriers or in a light-emitting diodes (LED) at forward bias. This quantum dot is represented as a spherical quantum well 0.9eV in depth. The electron level with energy about 0.15eV below the bottom of the silicon conduction band plays role of an electron trap. The trapped electron interacts with a hole in valence band of silicon forming “indirect” exciton bonded to quantum well. The energy is transferred to f - shell of erbium by the Auger electron - hole recombination.

High Pressure Studies of Quantum Well Emission and Deep Emission in GaInP(ordered)-GaAs Heterostructures

1997 ◽  
Vol 499 ◽  
Author(s):  
S. H. Kwok ◽  
P. Y. Yu ◽  
K. Uchida ◽  
T. Arai
Keyword(s):  
High Pressure ◽  
Quantum Well ◽  
Emission Band ◽  
Excitation Power ◽  
High Excitation ◽  
High Pressure Studies ◽  
Band Alignments ◽  
High Pressure Study

ABSTRACTWe report on a high pressure study of emission from a series of GaInP(ordered)/GaAs heterostructures. A so-called “deep emission” band at 1.46 eV is observed in all our samples. At high excitation power, quantum well emission emerges in only one structure where thin GaP layers are inserted on both sides of the GaAs well. From the pressure dependent emission in this sample we have determined its band alignments. The role of the GaP layers in suppressing the deep emission is elucidated.

scholarly journals Instability of the marginal commutative model of tunneling centers interacting with a metallic environment: Role of the electron-hole symmetry breaking

1997 ◽  
Vol 56 (20) ◽  
pp. 12947-12960 ◽  
Author(s):  
A. Zawadowski ◽  
G. Zaránd ◽  
P. Nozières ◽  
K. Vladár ◽  
G. T. Zimányi
Keyword(s):  
Symmetry Breaking ◽  
Electron Hole ◽  
Tunneling Centers
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