Enhanced quantum well infrared photodetector with novel multiple quantum well grating structure

1996 ◽  
Vol 68 (20) ◽  
pp. 2846-2848 ◽  
Author(s):  
T. R. Schimert ◽  
S. L. Barnes ◽  
A. J. Brouns ◽  
F. C. Case ◽  
P. Mitra ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Grating Structure

scholarly journals Thermal Interdiffusion in InGaAs/GaAs Strained Multiple Quantum Well Infrared Photodetector

1997 ◽  
Vol 484 ◽  
Author(s):  
Alex S. W. Lee ◽  
E. Herbert Li ◽  
Gamani Karunasiri
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Multiple Quantum Well ◽  
Annealing Process ◽  
Multiple Quantum ◽  
Optical And Electrical Properties ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Order Of Magnitude ◽  
Band Mixing

AbstractRTA at 850 °C for 5 and 10 s is carried out to study the effect of interdiffusion on the optical and electrical properties of strained InGaAs/GaAs quantum well infrared photodetector. Photoluminescence measurement at 4.5 K shows that no strain relaxation or misfit dislocation formation occurs throughout the annealing process. Absorption and responsivity peak wavelengths are red shifted continuously without appreciable degradation in absorption strength. The normal incident absorption, which is believed to be the result of band-mixing effects induced by the coupling between the conduction and valence and is usually forbidden in conventional polarization selection rule, is preserved after interdiffusion. Responsivity spectra of both 0° and 90° polarization are of compatible amplitude and the shape of the annealed spectra becomes narrower. Dark current of the annealed devices is not very sensitive to temperature variation and is found to be an order of magnitude larger than the as-grown one at 77K.

Spectral Response Modification Of Quantum Well Infrared Photodetector By Quantum Well Intermixing

2002 ◽  
Vol 744 ◽  
Author(s):  
J. C. Shin ◽  
W. J. Choi ◽  
I. K. Han ◽  
Y. J. Park ◽  
J. I. Lee ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spectral Response ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Ir Absorption ◽  
Infrared Photodetector ◽  
Quantum Well Intermixing ◽  
Absorption Region ◽  
Quantum Well Infrared Photodetector ◽  
Si Doped

ABSTRACTWe have studied the change of the spectral response in a quantum well infrared photodetector (QWIP) by using the impurity-free vacancy disordering (IFVD) to change the bandgap of the GaAs/AlGaAs multiple quantum well absorption layer. IFVD process has been carried out with PECVD-grown SiO2 capping on the MOCVD-grown QWIP structure, whose absorption region consists of 25 periods of 3.6nm thick Si-doped GaAs well and 50nm thick Al0.24Ga0.76As barrier. The PL peak of MQW decreased with the increase of annealing temperature and time from 802 nm to 700 nm at 15 K. The fabricated QWIP whose absorption region was intermixed at 850 °C by IFVD technique showed the maximum change in spectral response from 8 to 10 um when compared to a QWIP without intermixing. This result implies that the intermixing technology can be used to make multicolor QWIP without growing multiple IR absorption regions.

A Voltage-Tunable Two-Color InGaAs/AlGaAs Quantum well Infrared Photodetector

2006 ◽  
Vol 959 ◽  
Author(s):  
Brandon Passmore ◽  
Jie Liang ◽  
Da Zhuang ◽  
Omar Manasreh ◽  
Vasyl Kunets ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Peak Position ◽  
Multiple Quantum ◽  
Infrared Photodetector ◽  
Intersubband Transitions ◽  
Quantum Well Infrared Photodetector ◽  
High Bias ◽  
Grown Structure ◽  
Absorption Measurements

ABSTRACTA voltage-tunable two-color multiple quantum well infrared photodetector was fabricated with two bands at 6.0 and 10.3 ìm. The molecular beam epitaxy grown structure consists of two stacks of n-type InGaAs wells and GaAs/AlGaAs superlattice barriers. The 6.0 ìm band was found to be dominant at low bias voltages while the 10.3 ìm band is dominant at high bias voltages. The optical absorption measurements confirm the presence of both bands. Furthermore, the transfer matrix method is used to estimate the peak position energies of the intersubband transitions in the two stacks.

Performance enhancement in Quantum Well Infrared Photodetector utilizing the Grating Structure

CLEO: 2013 ◽  
2013 ◽  
Author(s):  
Ming-Lun Lee ◽  
Cheng-Ju Hsieh ◽  
Yao-Hong You ◽  
Vin-Cent Su ◽  
Po-Hsun Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Performance Enhancement ◽  
Infrared Photodetector ◽  
Quantum Well Infrared Photodetector ◽  
Grating Structure

Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response Via Rapid Thermal Annealing

1996 ◽  
Vol 421 ◽  
Author(s):  
D.K. Sengupta ◽  
W. Fang ◽  
J.I. Malin ◽  
H.C. Kuo ◽  
T. Horton ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Long Wavelength ◽  
Quantum Well Infrared Photodetector ◽  
Intersubband Absorption ◽  
Photoresponse Spectrum ◽  
Performance Results

AbstractA shift in the peak response wavelength and a broadening of the photoresponse spectrum is demonstrated for intersubband absorption in n-doped GaAs/AIGaAs multiple quantum well detectors following intermixing of the well and barrier layers during rapid thermal annealing. In general, a decrease in performance is observed for the RTA QWIPs when compared to the as-grown detectors. The peak absolute response of the annealed QWIPs is lower by almost a factor of four, which results in corresponding decrease in quantum efficiency. In addition, the noise performance results in a detectivity which is five times lower than that of QWIPs fabricated from as-grown structures.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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