Comparison of N- And P-Type Ingaas/Inp Quantum Well Infrared Photodetectors

1996 ◽  
Vol 421 ◽  
Author(s):  
D.K. Sengupta ◽  
J.I. Malin ◽  
S.L. Jackson ◽  
W. Fang ◽  
W. Wu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spectral Response ◽  
Growth Conditions ◽  
Dual Band ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
Gas Source ◽  
Order Of Magnitude ◽  
P Type ◽  
Lattice Matched

AbstractOver an order of magnitude reduction in dark current was observed for gas-source molecular beam epitaxially (GSMBE) grown, lattice-matched n- and p-type InGaAs/InP quantum-well infrared photodetectors (QWIPs). Peak spectral response at 8.93 and 4.55 μm for n- and p-type QWIPs, respectively, open the possibility of dual-band monolithic integration under identical GSMBE growth conditions.

Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

1996 ◽  
Vol 450 ◽  
Author(s):  
D. K. Sengupta ◽  
S. Kim ◽  
T. Horton ◽  
H. C. Kuo ◽  
S. Thomas ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Structural Parameters ◽  
Spectral Response ◽  
Interface Roughness ◽  
Scanning Tunneling ◽  
Infrared Photodetectors ◽  
Cross Sectional ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

ABSTRACTP-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 Å wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

Overcoming absorption saturation with doping in p-type quantum well infrared photodetectors: modeling and experiment

2003 ◽  
Vol 44 (5-6) ◽  
pp. 331-336
Author(s):  
F. Szmulowicz ◽  
J. Ehret ◽  
K. Mahalingam ◽  
S. Hegde ◽  
J. Solomon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Absorption Saturation ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

Effect of oblique incidence on the spectral response of quantum well infrared photodetectors

2005 ◽  
Vol 97 (2) ◽  
pp. 023106 ◽  
Author(s):  
I. Ribet-Mohamed ◽  
N. Guérineau ◽  
S. Suffis-Carretero ◽  
M. Tauvy ◽  
A. De Rossi ◽  
...  
Keyword(s):  
Quantum Well ◽  
Oblique Incidence ◽  
Spectral Response ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors

Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors

2000 ◽  
Vol 77 (15) ◽  
pp. 2400-2402 ◽  
Author(s):  
A. Shen ◽  
H. C. Liu ◽  
M. Gao ◽  
E. Dupont ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonant Cavity ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors

2000 ◽  
Vol 18 (2) ◽  
pp. 601-604 ◽  
Author(s):  
A. Shen ◽  
H. C. Liu ◽  
M. Buchanan ◽  
M. Gao ◽  
F. Szmulowicz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
P Type
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