Effect of compressive strain on the performance of p-type quantum well infrared photodetectors

1997 ◽  
Author(s):  
Sheng S. Li ◽  
Jerome T. Chu
Keyword(s):  
Quantum Well ◽  
Compressive Strain ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

Overcoming absorption saturation with doping in p-type quantum well infrared photodetectors: modeling and experiment

2003 ◽  
Vol 44 (5-6) ◽  
pp. 331-336
Author(s):  
F. Szmulowicz ◽  
J. Ehret ◽  
K. Mahalingam ◽  
S. Hegde ◽  
J. Solomon ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Absorption Saturation ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

Resonant-cavity-enhanced p-type GaAs/AlGaAs quantum-well infrared photodetectors

2000 ◽  
Vol 77 (15) ◽  
pp. 2400-2402 ◽  
Author(s):  
A. Shen ◽  
H. C. Liu ◽  
M. Gao ◽  
E. Dupont ◽  
M. Buchanan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Resonant Cavity ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

Growth and Characterization of Interfaces in P-Type InGaAs/InP Quantum-Well Infrared Photodetectors with Ultra-Thin Quantum Wells

1996 ◽  
Vol 450 ◽  
Author(s):  
D. K. Sengupta ◽  
S. Kim ◽  
T. Horton ◽  
H. C. Kuo ◽  
S. Thomas ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Structural Parameters ◽  
Spectral Response ◽  
Interface Roughness ◽  
Scanning Tunneling ◽  
Infrared Photodetectors ◽  
Cross Sectional ◽  
Quantum Well Infrared Photodetectors ◽  
P Type

ABSTRACTP-type InGaAs/InP quantum-well infrared photodetectors operated at 4.55 μm require the growth of ultra-thin (10 Å) quantum wells. We report a study of interfaces in QWIPs grown by gas-source molecular beam epitaxy in which we optimized the group V source supply sequence so that a 6 K photoluminescence linewidth as narrow as 8.4 meV was observed from a structure with 10 Å wells. Analysis of the PL suggests that interface roughness was minimized. Cross-sectional scanning tunneling microscopy, double crystal x-ray diffraction, and cross-sectional tunneling electron microscopy confirmed that high-quality interfaces and uniform layers were obtained. Using the derived structural parameters, photocurrent spectral response was theoretically predicted for these QWIPs and then experimentally verified.

Progress on optimization of p-type GaAs/AlGaAs quantum well infrared photodetectors

2000 ◽  
Vol 18 (2) ◽  
pp. 601-604 ◽  
Author(s):  
A. Shen ◽  
H. C. Liu ◽  
M. Buchanan ◽  
M. Gao ◽  
F. Szmulowicz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Infrared Photodetectors ◽  
Quantum Well Infrared Photodetectors ◽  
P Type
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