Transient Photoconductivity of a-Si:H at Low Temperatures Induced by Bandgap Light

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Heck ◽  
P. Stradins ◽  
H. Fritzsche
Keyword(s):  
Steady State ◽  
Energy Loss ◽  
Low Temperatures ◽  
Hydrogenated Amorphous Silicon ◽  
Geminate Recombination ◽  
Transient Photoconductivity ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Different Time Scales ◽  
Type Sample

AbstractThe rise and decay of the photoconductivity σp of intrinsic and strongly p-type hydrogenated amorphous silicon (a-Si:H) samples was studied as a function of photocarrier generation rate G between 4.2K and 300K. In intrinsic samples the temperature regime T<60K of energy-loss hopping is clearly distinguishable from T>80K where thermal re-excitation of photocarriers is possible. For the p-type sample the temperature dividing the two regimes is near 170K. In intrinsic samples the rise of σp is faster when residual photocarriers exist from previous light exposures than when the samples are in the electronic dark equilibrium. This indicates that geminate recombination decreases with increasing photocarrier concentration. In the p-type sample we observe an up to 20 percent overshoot in the rise of σp before σp settles down to its steady state value. This overshoot increases with G. We interpret the overshoot as an interplay of two recombination channels with different time scales.

Transient Infrared Stimulated Photoconductivity in a-SI:H at Low Temperatures

1995 ◽  
Vol 377 ◽  
Author(s):  
S. Heck ◽  
P. Stradins ◽  
H. Fritzsche
Keyword(s):  
Energy Loss ◽  
Amorphous Silicon ◽  
Time Resolution ◽  
Low Temperatures ◽  
Hydrogenated Amorphous Silicon ◽  
Infrared Light ◽  
Dual Beam ◽  
Tunneling Recombination ◽  
Hydrogenated Amorphous

ABSTRACTDual beam photoconductivity with bandgap primary light and hv = 0.4- 0.6eV infrared light steps was measured with Ims time resolution in hydrogenated amorphous silicon (a-Si:H) at 4.2K. The results can be described by assuming that the photocurrent transients are due to energy-loss hopping of photocarriers and that the infrared light promotes recombination by reexciting photocarriers thereby enhancing the probability of tunneling recombination.

Measurements of the Transient Photoconductivity During the Growth of A-Si:H Multilayers

1990 ◽  
Vol 192 ◽  
Author(s):  
H. C. Neitzert ◽  
A. Werner ◽  
W. Kunst ◽  
M. Kunst
Keyword(s):  
Amorphous Silicon ◽  
Doping Concentration ◽  
Film Growth ◽  
Hydrogenated Amorphous Silicon ◽  
Deposition Process ◽  
Transient Photoconductivity ◽  
Multiple Layer ◽  
Layer Structures ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTThe deposition process of multiple layer structures of intrinsic and p-type hydrogenated amorphous silicon was followed by measuring the microwave detected transient photoconductivity (TRMC) during the film growth. In an i-p-i structure we can show that after deposition of an upper layer of about 500 nm, former deposited layers do not influence the TRMC-signal any more. In an i-p+-i-p structure we can clearly distinguish between p-layers of different doping concentration.

Semiconducting Polymer and Hydrogenated Amorphous Silicon Heterojunction Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. R. Middya ◽  
Eric A. Schiff
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Photovoltaic Effect ◽  
Hydrogenated Amorphous Silicon ◽  
Hybrid Solar Cells ◽  
Semiconducting Polymer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Silicon Heterojunction Solar Cells

ABSTRACTIn this work, we report on investigation of p-type semiconducting polymer, {poly(3,4 polyethylenedioxythiophene)-poly(styrenesulfonate)} (PEDOT:PSS) as the p-layer in NIP and PIN hydrogenated amorphous silicon (a-Si:H) solar cells. The rectification ratio of solution-casted diode is ∼ 10, it increases to 3×104 when PEDOT:PSS is deposited by Spin Coating technique. We observed additional photovoltaic effect when light is illuminated through polymer side. So far, best solar cells characteristics observed for PEDOT:PSS/a-Si:H hybrid solar cells are Voc ≈ 720 mV and Jsc ≈ 1 - 2 mA/cm2.

Boron doping in a-SiO:H,

2014 ◽  
Vol 92 (7/8) ◽  
pp. 586-588 ◽  
Author(s):  
Y. Kitani ◽  
T. Maeda ◽  
S. Kakimoto ◽  
K. Tanaka ◽  
R. Okumoto ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hole Mobility ◽  
Boron Doping ◽  
Type A ◽  
Dark Conductivity ◽  
Wide Range ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Silicon Oxygen

Boron-doping characteristics in hydrogenated amorphous silicon–oxygen alloys (a-SiO:H) have been studied in contrast to those in hydrogenated amorphous silicon (a-Si:H). Although the boron-incorporation efficiency shows almost the same value between a-SiO:H and a-Si:H, p-type a-SiO:H (p-a-SiO:H) exhibits lower dark conductivity by one or two orders of magnitude as compared to p-type a-Si:H (p-a-Si:H) in a wide range of doping levels. We have found that p-a-SiO:H exhibits low dark conductivity as compared to p-a-Si:H even when we choose samples showing the same activation energy from a variety of as-deposited and thermally annealed samples. We have concluded from the different Urbach-energy values between high quality intrinsic a-SiO:H and a-Si:H that the origin of low dark conductivity in p-a-SiO:H is due to low hole mobility.

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