Low Temperature Back-Surface-Field (BSF) Technology for Crystalline Silicon (c-Si) Thin Film Solar Cells Based on Heterojunctions between Boron-Doped P-Type Hydrogenated Amorphous Silicon and c-Si

2006 ◽  
Author(s):  
Mitsuyuki Yamanaka ◽  
Isao Sakata ◽  
Ryuichi Shimokawa ◽  
Hidetaka Takato
Keyword(s):  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Thin Film Solar Cells ◽  
Back Surface ◽  
Back Surface Field ◽  
Boron Doped ◽  
Surface Field ◽  
P Type ◽  
Hydrogenated Amorphous ◽  
Si Thin Film

Self-Organized Back Surface Field to Improve the Performance of Cu2ZnSn(S,Se)4 Solar Cells by Applying P-Type MoSe2:Nb to the Back Electrode Interface

2019 ◽  
Vol 11 (35) ◽  
pp. 31851-31859 ◽  
Author(s):  
Yanping Song ◽  
Bin Yao ◽  
Yongfeng Li ◽  
Zhanhui Ding ◽  
Huanhuan Sun ◽  
...  
Keyword(s):  
Solar Cells ◽  
Back Surface ◽  
Back Surface Field ◽  
Self Organized ◽  
Surface Field ◽  
Electrode Interface ◽  
P Type

scholarly journals Analysis of contact recombination at rear local back surface field via boron laser doping and screen-printed aluminum metallization on p-type PERC solar cells

2017 ◽  
Vol 124 ◽  
pp. 384-391 ◽  
Author(s):  
Yuka Tomizawa ◽  
Yoshinori Ikeda ◽  
Haruhiko Itoh ◽  
Takashi Shiro ◽  
Jochen Loffler ◽  
...  
Keyword(s):  
Solar Cells ◽  
Back Surface ◽  
Back Surface Field ◽  
Laser Doping ◽  
Surface Field ◽  
Aluminum Metallization ◽  
P Type ◽  
Screen Printed

scholarly journals Insights into the role of the interface defects density and the bandgap of the back surface field for efficient p-type silicon heterojunction solar cells

RSC Advances ◽  
2017 ◽  
Vol 7 (43) ◽  
pp. 26776-26782 ◽  
Author(s):  
Fengyou Wang ◽  
Yanbo Gao ◽  
Zhenyu Pang ◽  
Lili Yang ◽  
Jinghai Yang
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Back Surface ◽  
Back Surface Field ◽  
Heterojunction Solar Cells ◽  
Interface Defects ◽  
Surface Field ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

Interface defects and the back surface field of p-type heterojunction solar cells are investigated for achieving high performance.

Life-cycle assessment of p-type multi-Si back surface field (BSF) solar module in China of 2019

Solar Energy ◽  
2020 ◽  
Vol 196 ◽  
pp. 207-216
Author(s):  
Xiaojie Jia ◽  
Fang Lv ◽  
Ping Li ◽  
Wenjing Wang
Keyword(s):  
Life Cycle Assessment ◽  
Life Cycle ◽  
Back Surface ◽  
Solar Module ◽  
Back Surface Field ◽  
Surface Field ◽  
P Type

Density of States Spectroscopy in p-Type a-Si:H and a-SiC:H

1991 ◽  
Vol 219 ◽  
Author(s):  
Richard S. Crandall ◽  
Stanley J. Salamon ◽  
Yueqin Xu
Keyword(s):  
Density Of States ◽  
Hydrogenated Amorphous Silicon ◽  
Closed Form Expression ◽  
Form Expression ◽  
Junction Capacitance ◽  
Capacitance Measurements ◽  
Boron Doped ◽  
Exponential Increase ◽  
P Type ◽  
Hydrogenated Amorphous

ABSTRACTWe derive a closed form expression for differential junction capacitance applicable when the density of states (DOS) varies exponentially with energy. Using this expression, we analyze p/n junction capacitance measurements that probe the DOS in boron doped hydrogenated amorphous silicon and silicon carbide alloy. In both materials we find that the p-layer DOS is described by an exponential increase with energy above the Fermi level.

Sign in / Sign up

Export Citation Format

Share Document