Spectroscopic Evidence for Near-Neighbor Bonded H(D) in A-Si:N:H(D) Thin Films

1996 ◽  
Vol 420 ◽  
Author(s):  
G. Lucovsky ◽  
P. Santos-Filho ◽  
A. Banerjee ◽  
Z. Jing
Keyword(s):  
Thin Films ◽  
Near Neighbor ◽  
Repulsive Interaction ◽  
Chemical Induction ◽  
Silicon Nitrides ◽  
Hydrogenated Silicon ◽  
Quantum Chemistry Calculations ◽  
Bond Stretching ◽  
Relative Separation ◽  
Stretching Vibration

AbstractIncreases in the frequency of the silicon monohydride (Si-H) bond-stretching vibration in hydrogenated silicon nitrides, over and above what can be attributed to chemical induction effects, are shown to be generated by a repulsive interaction between the H-atom of the Si-H group, and a near-neighbor SiN-H group. This interaction increases the effective bond-stretching force constant of the H-atom of the Si-H group. This effect has been verified by ab-initio quantum chemistry calculations that have been used to calculate the energy of the H-atom of the Si-H group as a function of the relative separation between near-neighbor Si-H and SiN-H groups. Decreases in the bond-stretching frequencies of SiN-H groups in heavily hydrogenated nitrides are attributed to H-bonding effects associated with near-neighbor pairs of SiN-H groups.

INVESTIGATION OF THE Si:H FILMS DEPOSITED NEAR THE TRANSITION REGION FOR APPLICATION IN SOLAR CELLS

2006 ◽  
Vol 20 (27) ◽  
pp. 1739-1747 ◽  
Author(s):  
QINGSONG LEI ◽  
ZHIMENG WU ◽  
XINHUA GENG ◽  
YING ZHAO ◽  
JIANPING XI
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transition Region ◽  
Chemical Vapor ◽  
Transition Process ◽  
Very High Frequency ◽  
Working Pressure ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films ◽  
Narrow Region

Hydrogenated silicon thin films (Si:H) have been deposited by using very high-frequency plasma-enhanced chemical vapor deposition (VHF PECVD). The structural, electrical and optical properties of the films were characterized. The transition process and the effect of pressure were studied. Results suggest that a narrow region, in which the transition from microcrystalline to amorphous growth takes place, exists in the regime of silane concentration (SC). This region is influenced by the working pressure (P). At lower pressure, the transition region is shifted to higher SC. Microcrystalline silicon (μ c-Si:H ) thin films deposited near transition region was applied as i-layer to the p-i-n solar cells. An efficiency of about 5.30% was obtained.

Internal structure of mixed phase hydrogenated silicon thin films made at 39°C

2006 ◽  
Vol 89 (5) ◽  
pp. 051922 ◽  
Author(s):  
P. C. P. Bronsveld ◽  
J. K. Rath ◽  
R. E. I. Schropp ◽  
T. Mates ◽  
A. Fejfar ◽  
...  
Keyword(s):  
Thin Films ◽  
Internal Structure ◽  
Mixed Phase ◽  
Hydrogenated Silicon ◽  
Silicon Thin Films

DEPOSITION-AND-SUBSTRATE TUNABLE PHOTONIC BANDGAP IN OPTICAL RESPONSES OF HYDROGENATED AMORPHOUS SILICON CARBIDE THIN FILMS

2003 ◽  
Vol 17 (09) ◽  
pp. 387-392 ◽  
Author(s):  
NIKIFOR RAKOV ◽  
ARSHAD MAHMOOD ◽  
MUFEI XIAO
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Photonic Bandgap ◽  
Visible Spectrum ◽  
Incoherent Light ◽  
Hydrogenated Silicon ◽  
Optical Responses ◽  
Amorphous Hydrogenated Silicon ◽  
The Status ◽  
Two Parameters

Amorphous hydrogenated silicon carbide (a-SiC:H) thin films have been prepared by the RF reactive magnetron sputtering technique. The optical properties of the films have been studied by optical spectroscopy with an incoherent light source. The material is commonly regarded as a dielectric. We have discovered however that some films that were prepared under certain deposition conditions and on certain substrates may respond to external light as a metallic thin film, i.e. there are strongly enhanced reflection peaks in the optical spectrum. We have further discovered that some films may have a strong and broadened absorption peak at about 590 nm, which is an apparent photonic bandgap in the visible spectrum. The appearance of the photonic bandgap is very sensitive to two parameters: the substrate and the deposition gas. By changing the two parameters, one shifts the status of the film from with and without the photonic bandgap.

Microstructure of Thin Film Photoconductors and its Correlation with Optical and Electronic Properthss

1996 ◽  
Vol 452 ◽  
Author(s):  
U. Klement ◽  
D. Horst ◽  
F. Ernst
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Transmission Electron ◽  
Electronic Eye

AbstractThe objective of this work is to find a material to replace amorphous hydrogenated silicon used as photosensitive part in the “retina” of an “electronic eye”. For that reason, ZnS, ZnSe, CdS and CdSe were chosen for investigations. Thin films, prepared by chemical vapour deposition, were characterized by transmission electron microscopy. The observed microstructures were correlated with the optoelectronic properties of these materials. CdSe was found to be the most promising material for our application. Hence, the influence of a dielectric interlayer and the effects of additional annealing treatments were analyzed for CdSe and will be discussed with respect to the optimization of the material.

MICROSTRUCTURE AND BLUE PHOTOLUMINESCENCE OF HYDROGENATED SILICON CARBONITRIDE THIN FILMS

2019 ◽  
Vol 26 (04) ◽  
pp. 1850177 ◽  
Author(s):  
YINQIAO PENG ◽  
JICHENG ZHOU ◽  
GUIBIN LEI ◽  
YUANJU GAN ◽  
YUEFENG CHEN
Keyword(s):  
Thin Films ◽  
Network Structure ◽  
Energy Dispersive Spectrometer ◽  
Silicon Carbonitride ◽  
X Ray Diffraction ◽  
Hydrogenated Silicon ◽  
X Ray ◽  
Atomic Force ◽  
Scanning Electron ◽  
Blue Photoluminescence

Hydrogenated silicon carbonitride (SiCN:H) thin films were deposited by sputtering of silicon carbide target in hydrogen-doped argon and nitrogen atmospheres. The properties of the SiCN:H films were analyzed by scanning electron microscopy with energy dispersive spectrometer, atomic force microscope, Fourier transform infrared spectroscopy, X-ray diffraction and fluorescence spectrophotometer. No distinct crystal was formed in the SiCN:H films as-deposited and annealed at 600∘C and 800∘C. The SiCN:H films were mainly composed of Si–N, Si–C, Si–O, C–C, C–N, C[Formula: see text]N, N–Hn bonds and SiCxNy network structure. The strong blue photoluminescence observed from the SiCN:H film annealed at 600∘C was attributed to SiCxNy network structure.

Coupling of the Double Bond Stretching Vibration in Divinyl Ethers

1971 ◽  
Vol 4 (1-2) ◽  
pp. 15-17 ◽  
Author(s):  
Howard Kimmel ◽  
William H. Snyder
Keyword(s):  
Double Bond ◽  
Bond Stretching ◽  
Stretching Vibration
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