Ordering in GaxIn1−xAsyP1−y Detected by Diffraction Methods

1995 ◽  
Vol 417 ◽  
Author(s):  
I. Rechenberg ◽  
A. Oster ◽  
A. Knauer ◽  
U. Richter ◽  
J. Menniger ◽  
...  
Keyword(s):  
High Resolution ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
Temperature Behaviour ◽  
Anomalous Temperature ◽  
X Ray ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
Lattice Matched

AbstractGa0.54In0.46As0.12P0.88 lattice matched to GaAs and grown by metal organic vapor phase epitaxy (MOVPE) shows an anomalous temperature behaviour of its cathodoluminescence (CL) emission. Using high resolution x-ray diffraction (HRXRD) and transmission electron diffraction (TED), ordering in this quarternary alloy can be identified as the reason for this behaviour. The ordering follows the same trends with respect to misorientation that are known for InGaP. In addition to ordering, compositional fluctuations related to a miscibility gap are found in this material. In contrast, layers with a higher As-content (y=0.5; y=0.76) do not show properties related to ordering.

Single and Double Variant Cupt-B Ordered GalnAs

1999 ◽  
Vol 583 ◽  
Author(s):  
R. L. Forrest ◽  
E. D. Meserole ◽  
R. T. Nielsen ◽  
M. S. Goorsky ◽  
Y. Zhang ◽  
...  
Keyword(s):  
Order Parameter ◽  
Growth Conditions ◽  
Semiconductor Heterostructures ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Inp Substrates ◽  
Lattice Matched

AbstractNominally lattice-matched GaInAs layers grown by metal organic vapor phase epitaxy on InP substrates have been studied using high-resolution x-ray diffraction (HRXRD) to determine the growth conditions under which ordering is introduced. HRXRD provides an independent means to quantify the order parameter of semiconductor heterostructures as well as the ordering on different {111} planes, i.e., double variant ordering. This independent means to determine ordering provides for a better understanding of the effects of ordering on the electronic and optical properties. Double variant ordering was observed for epitaxial layers grown on exact (001) InP substrates, with an order parameter of about 0.1 in both variants. For substrates that were miscut by 6 degrees, single variant ordering was detected. In these cases, an order parameter as high as 0.66 was measured for certain growth conditions. The layers grown on vicinal substrates are all of high crystalline quality, those on (001) substrates exhibit some mosaic spread.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

Type II Dislocation Loops and their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-ray Diffraction

1995 ◽  
Vol 378 ◽  
Author(s):  
R. H. Thompson ◽  
V. Krishnamoorthy ◽  
J. Liu ◽  
K. S. Jones
Keyword(s):  
High Resolution ◽  
Type Ii ◽  
Dislocation Loops ◽  
X Ray Diffraction ◽  
Empirical Constant ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Measured Strain ◽  
P Type

AbstractP-type (100) silicon wafers were implanted with 28Si+ ions at an energy of 50 keV and to doses of 1 × 1015, 5 × 1015 and 1 × 1016 cm−2, respectively, and annealed in a N2 ambient at temperatures ranging from 700°C to 1000°C for times ranging from 15 minutes to 16 hours. The resulting microstructure consisted of varying distributions of Type II end of range dislocation loops. The size distribution of these loops was quantified using plan-view transmission electron microscopy and the strain arising from these loops was investigated using high resolution x-ray diffraction. The measured strain values were found to be constant in the loop coarsening regime wherein the number of atoms bound by the loops remained a constant. Therefore, an empirical constant of 7.7 × 10−12 interstitial/ppm of strain was evaluated to relate the number of interstitials bound by these dislocation loops and the strain. This value was used successfully in estimating the number of interstitials bound by loops at the various doses studied provided the annealing conditions were such that the loop microstructure was in the coarsening or dissolution regime.

High-resolution microbeam x-ray diffractometry applied to InGaAsP/InP layers grown by narrow-stripe selective metal-organic vapor phase epitaxy

2000 ◽  
Vol 77 (9) ◽  
pp. 1286-1288 ◽  
Author(s):  
Shigeru Kimura ◽  
Hidekazu Kimura ◽  
Kenji Kobayashi ◽  
Tomoaki Oohira ◽  
Koich Izumi ◽  
...  
Keyword(s):  
High Resolution ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
X Ray ◽  
Organic Vapor ◽  
Metal Organic ◽  
Narrow Stripe
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