scholarly journals Characterization of interdiffusion around miscibility gap of lattice matched InGaAs∕InP quantum wells by high resolution x-ray diffraction

2007 ◽  
Vol 101 (1) ◽  
pp. 013502 ◽  
Author(s):  
F. Bollet ◽  
W. P. Gillin
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Matched

Characterization of strained quantum wells by high‐resolution x‐ray diffraction

1996 ◽  
Vol 79 (4) ◽  
pp. 1869-1875 ◽  
Author(s):  
Y. Finkelstein ◽  
E. Zolotoyabko ◽  
M. Blumina ◽  
D. Fekete
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Strained Quantum Wells

Ordering in GaxIn1−xAsyP1−y Detected by Diffraction Methods

1995 ◽  
Vol 417 ◽  
Author(s):  
I. Rechenberg ◽  
A. Oster ◽  
A. Knauer ◽  
U. Richter ◽  
J. Menniger ◽  
...  
Keyword(s):  
High Resolution ◽  
Miscibility Gap ◽  
X Ray Diffraction ◽  
Temperature Behaviour ◽  
Anomalous Temperature ◽  
X Ray ◽  
Organic Vapor ◽  
Transmission Electron ◽  
Metal Organic ◽  
Lattice Matched

AbstractGa0.54In0.46As0.12P0.88 lattice matched to GaAs and grown by metal organic vapor phase epitaxy (MOVPE) shows an anomalous temperature behaviour of its cathodoluminescence (CL) emission. Using high resolution x-ray diffraction (HRXRD) and transmission electron diffraction (TED), ordering in this quarternary alloy can be identified as the reason for this behaviour. The ordering follows the same trends with respect to misorientation that are known for InGaP. In addition to ordering, compositional fluctuations related to a miscibility gap are found in this material. In contrast, layers with a higher As-content (y=0.5; y=0.76) do not show properties related to ordering.

Structural characterization of Si1 − x Gex ultrathin quantum wells in a Si matrix by high-resolution X-ray diffraction

2002 ◽  
Vol 47 (6) ◽  
pp. 1058-1062
Author(s):  
A. M. Afanas’ev ◽  
M. A. Chuev ◽  
R. M. Imamov ◽  
É. Kh. Mukhamedzhanov ◽  
M. M. Rzaev ◽  
...  
Keyword(s):  
High Resolution ◽  
Quantum Wells ◽  
Structural Characterization ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals High-resolution characterization of the forbidden Si 200 and Si 222 reflections

2015 ◽  
Vol 48 (2) ◽  
pp. 528-532 ◽  
Author(s):  
Peter Zaumseil
Keyword(s):  
High Resolution ◽  
Angular Range ◽  
Angular Divergence ◽  
X Ray Diffraction ◽  
Multiple Diffraction ◽  
Diffraction Plane ◽  
X Ray ◽  
Sample Orientation ◽  
Plane Sample

The occurrence of the basis-forbidden Si 200 and Si 222 reflections in specular X-ray diffraction ω–2Θ scans is investigated in detail as a function of the in-plane sample orientation Φ. This is done for two different diffractometer types with low and high angular divergence perpendicular to the diffraction plane. It is shown that the reflections appear for well defined conditions as a result of multiple diffraction, and not only do the obtained peaks vary in intensity but additional features like shoulders or even subpeaks may occur within a 2Θ range of about ±2.5°. This has important consequences for the detection and verification of layer peaks in the corresponding angular range.

High Resolution X-Ray Diffraction Characterization of [111]B Oriented InGaAs/GaAs Mqw Structures

1997 ◽  
pp. 439-448 ◽  
Author(s):  
A. Sanz-Hervás ◽  
C. Villar ◽  
M. Aguilar ◽  
A. Sacedón ◽  
J. L. Sánchez-Rojas ◽  
...  
Keyword(s):  
High Resolution ◽  
X Ray Diffraction ◽  
X Ray
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