Homoepitaxial Mosaic Growth and Liftoff of Diamond Films

1995 ◽  
Vol 416 ◽  
Author(s):  
Pehr E. Pehrsson ◽  
Terri Mccormick ◽  
W. Brock Alexander ◽  
Mike Marchywka ◽  
David Black ◽  
...  
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Defect Density ◽  
Diamond Films ◽  
Subsurface Damage ◽  
Diamond Lattice ◽  
Large Area ◽  
Damage Layer ◽  
Single Crystal Diamond ◽  
Homoepitaxial Layers

ABSTRACTGrowth of large area, single or almost single crystal diamond is of great importance to the electronics industry. In this work, single crystal diamonds were implanted with C+ ions, inducing a subsurface damage layer in the diamond lattice. Homoepitiaxial diamond films were then grown on the implanted crystals using a microwave plasma CVD reactor. Films grown on on-axis substrates were dominated by large numbers of hillocks, renucleation and penetration twins, while miscut substrates exhibited stepflow growth. The homoepitaxial layers were separated from the substrate by a water-based etch which selectively attacks the subsurface damage layer of the diamond lattice. The films were analyzed by Raman scattering, scanning electron microscopy (SEM), optical microscopy, photo- and cathodoluminescence, and x-ray diffraction. CVD growth on adjacent, oriented substrates formed a single, continuous diamond layer. The resulting homoepitaxial film quality, orientation, defect density and it's relationship to the underlying substrates were compared at various points on the surface, particularly the region which overgrew the gap between different substrates.

Heteroepitaxial Nucleation of Diamond

1995 ◽  
Vol 416 ◽  
Author(s):  
B. R. Stoner ◽  
P. J. Ellis ◽  
M. T. Mcclure ◽  
S. D. Wolter
Keyword(s):  
Single Crystal ◽  
Electronic Transport ◽  
Diamond Films ◽  
Heteroepitaxial Growth ◽  
Large Area ◽  
Diamond Nucleation ◽  
Single Crystal Diamond ◽  
Single Crystal Films ◽  
Crystal Films

ABSTRACTThe heteroepitaxial nucleation and eventual growth of large area single crystal diamond films has long eluded researchers interested in tapping it's many enabling properties, specifically in the field of active electronics. The uncertainty surrounding the diamond nucleation mechanism(s) and corresponding inability to carefully control this process are often blamed for the difficulty in achieving true heteroepitaxial growth. Biasenhanced nucleation (BEN) has been shown to provide in-situ control of the nucleation process. Subsequent advancements in both nucleation and deposition stages has resulted in highly oriented diamond films, approaching single crystal quality yet still plagued by arrays of medium to low angle grain boundaries that can degrade the electronic transport properties. To further improve upon these results and achieve large area, single crystal films it is believed that development must focus on the more fundamental problems of diamond nucleation. This paper presents a review of recent progress pertaining to the bias-enhanced process and focuses on data specific to the epitaxial nucleation dilemma.

Dopant Uniformity and Concentration in Boron Doped Single Crystal Diamond Films

2012 ◽  
Vol 1395 ◽  
Author(s):  
Shannon. N. Demlow ◽  
I. Berkun ◽  
M. Becker ◽  
T. Hogan ◽  
T.A. Grotjohn
Keyword(s):  
Single Crystal ◽  
Microwave Plasma ◽  
Growth Parameters ◽  
Diamond Films ◽  
Boron Doped Diamond ◽  
High Quality ◽  
Boron Doped ◽  
Single Crystal Diamond ◽  
Wide Range ◽  
Boron Level

ABSTRACTHigh quality single crystal boron-doped diamond films are deposited in a microwave plasma-assisted CVD reactor with feedgas mixtures including hydrogen, methane, diborane, and carbon dioxide at reactor pressures of 160 Torr. The effect of diborane levels and other growth parameters on the incorporated boron levels are investigated, and the doping efficiency is calculated over a wide range of boron concentrations. The boron level is investigated using infrared absorption, and compared to SIMS measurements, and defects are shown to affect the doping uniformity.

Growth Technique For Large Area Mosaic Diamond Films†

1992 ◽  
Vol 242 ◽  
Author(s):  
R. W. Pryor ◽  
M. W. Geis ◽  
H. R. Clark
Keyword(s):  
Single Crystal ◽  
Electronic Properties ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Growth Conditions ◽  
Large Area ◽  
Si Substrates ◽  
Single Crystal Diamond ◽  
The Individual

ABSTRACTA new technique has been developed to grow semiconductor grade diamond substrates with dimensions comparable to those of currently available Si wafers. Previously, the synthetic single crystal diamond that could be grown measured only a few millimeters across, compared with single crystal Si substrates which typically are 10 to 15 cm in diameter. In the technique described, an array of features is first etched in a Si substrate. The shape of the features matches that of inexpensive, synthetic faceted diamond seeds. A diamond mosaic is then formed by allowing the diamond seeds to settle out of a slurry onto the substrate, where they become fixed and oriented in the etched features. For the experiments reported, the mosaic consists of seeds ∼ 100 μm across on 100 μm centers. A mosaic film is obtained by chemical vapor deposition of homoepitaxial diamond until the individual seeds grow together. Although these films contain low angle (<1°) grain boundaries, smooth, continuous diamond films have been obtained with electronic properties substantially better than those of polycrystalline diamond films and equivalent to those of homoepitaxial single crystal diamond films. The influence of growth conditions and seeding procedures on the crystallographic and electronic properties of these mosaic diamond films is discussed.

Large Area Single-Crystal Diamond Synthesis by 915 MHz Microwave Plasma-Assisted Chemical Vapor Deposition

2014 ◽  
Vol 14 (7) ◽  
pp. 3234-3238 ◽  
Author(s):  
Qi Liang ◽  
Chih-shiue Yan ◽  
Joseph Lai ◽  
Yu-fei Meng ◽  
Szczesny Krasnicki ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Diamond Synthesis ◽  
Large Area ◽  
Single Crystal Diamond ◽  
Single Crystal Diamond Synthesis

Characterization of diamond thin films: Diamond phase identification, surface morphology, and defect structures

1989 ◽  
Vol 4 (2) ◽  
pp. 373-384 ◽  
Author(s):  
B. E. Williams ◽  
J. T. Glass
Keyword(s):  
Electron Microscopy ◽  
Surface Morphology ◽  
Methane Concentration ◽  
Microwave Plasma ◽  
Defect Density ◽  
Diamond Films ◽  
Hydrogen Gas ◽  
Phase Identification ◽  
Diamond Crystals ◽  
Thin Carbon

Thin carbon films grown from a low pressure methane-hydrogen gas mixture by microwave plasma enhanced CVD have been examined by Auger electron spectroscopy, secondary ion mass spectrometry, electron and x-ray diffraction, electron energy loss spectroscopy, and electron microscopy. They were determined to be similar to natural diamond in terms of composition, structure, and bonding. The surface morphology of the diamond films was a function of position on the sample surface and the methane concentration in the feedgas. Well-faceted diamond crystals were observed near the center of the sample whereas a less faceted, cauliflower texture was observed near the edge of the sample, presumably due to variations in temperature across the surface of the sample. Regarding methane concentration effects, threefold {111} faceted diamond crystals were predominant on a film grown at 0.3% CH4 in H2 while fourfold {100} facets were observed on films grown in 1.0% and 2.0% CH4 in H2. Transmission electron microscopy of the diamond films has shown that the majority of diamond crystals have a very high defect density comprised of {111} twins, {111} stacking faults, and dislocations. In addition, cross-sectional TEM has revealed a 50 Å epitaxial layer of β3–SiC at the diamond-silicon interface of a film grown with 0.3% CH4 in H2 while no such layer was observed on a diamond film grown in 2.0% CH4 in H2.

Deposition of large area uniform diamond films by microwave plasma CVD

Vacuum ◽  
2018 ◽  
Vol 147 ◽  
pp. 134-142 ◽  
Author(s):  
J. Weng ◽  
F. Liu ◽  
L.W. Xiong ◽  
J.H. Wang ◽  
Q. Sun
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Plasma Cvd ◽  
Large Area ◽  
Microwave Plasma Cvd

MESFETs on H-terminated Single Crystal Diamond

2009 ◽  
Vol 1203 ◽  
Author(s):  
Paolo Calvani ◽  
Maria Cristina Rossi ◽  
Gennaro Conte ◽  
Stefano Carta ◽  
Ennio Giovine ◽  
...  
Keyword(s):  
Performance Evaluation ◽  
Single Crystal ◽  
Oscillation Frequency ◽  
Diamond Films ◽  
Drain Current ◽  
Gate Length ◽  
Maximum Oscillation Frequency ◽  
Single Crystal Diamond ◽  
Device Geometry ◽  
Rf Performance

AbstractEpitaxial diamond films were deposited on polished single crystal Ib type HPHT diamond plates of (100) orientation by microwave CVD. The epilayers were used for the fabrication of surface channel MESFET structures having sub-micrometer gate length in the range 200-800 nm. Realized devices show maximum drain current and trasconductance values of about 190 mA/mm and 80 mS/mm, respectively, for MESFETs having 200 nm gate length. RF performance evaluation gave cut off frequency of about 14 GHz and maximum oscillation frequency of more than 26 GHz for the same device geometry.

Overgrowth of Single Crystal Diamond Using Defect-Selective Etching and Epitaxy Technique in Chemical Vapor Deposition

2021 ◽  
Vol 21 (8) ◽  
pp. 4412-4417
Author(s):  
Jonggeon Lee ◽  
Taemyung Kwak ◽  
Geunho Yoo ◽  
Seongwoo Kim ◽  
Okhyun Nam
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Defect Density ◽  
Chemical Vapor ◽  
Atomic Force Microscope Image ◽  
Selective Etching ◽  
Diamond Surface ◽  
Plasma Chemical Vapor Deposition ◽  
Single Crystal Diamond

In this study, we demonstrated the defect-selective etching and epitaxy technique for defect reduction of a heteroepitaxial chemical vapor deposition (CVD) diamond substrate. First, an 8 nm layer of nickel was deposited on the diamond surface using an e-beam evaporator. Then, defect-selective etching was conducted through an in situ single process using microwave plasma chemical vapor deposition (MPCVD). After defect-selective etching, the diamond layer was overgrown by MPCVD. The defect density measured from the atomic force microscope image decreased from 3.27×108 to 2.02×108 cm−2. The first-order Raman peak of diamond shifted from 1340 to 1336 cm−1, and the full width at half maximum (FWHM) decreased from 9.66 to 7.66 cm−1. Through the defect-selective etching and epitaxy technique, it was confirmed that the compressive stress was reduced and the crystal quality improved.

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