Barrier Modification In Au/IIb Semiconducting Diamond Contacts

1995 ◽  
Vol 416 ◽  
Author(s):  
M. Teklu ◽  
K. Das
Keyword(s):  
Low Dose ◽  
Surface Preparation ◽  
Material System ◽  
Conducting Material ◽  
Doped Semiconductors ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Diamond Crystals ◽  
Semiconducting Diamond ◽  
Metal Work

ABSTRACTRectifying contacts on semiconducting type IIb diamond crystals are readily established with any conducting material system including elemental metals, highly doped semiconductors, silicides and carbides. However, for a given surface preparation using oxidizing wet chemicals and in the absence of a surface reaction, barrier heights are observed to be constant regardless of the metal work function. In this report it is demonstrated that an adjustment of the barrier height can be achieved by employing a premetallization low-dose low-energy ion-implantation step.

Interface States and Barrier Heights on Metal/4H-SiC Interfaces

2009 ◽  
Vol 615-617 ◽  
pp. 427-430 ◽  
Author(s):  
Shaweta Khanna ◽  
Arti Noor ◽  
Man Singh Tyagi ◽  
Sonnathi Neeleshwar
Keyword(s):  
Work Function ◽  
Barrier Height ◽  
Surface Preparation ◽  
Interface States ◽  
Careful Examination ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Wide Range ◽  
Metal Work ◽  
Density Of Interface States

Available data on Schottky barrier heights on silicon and carbon rich faces of 4H-SiC have been carefully analyzed to investigate the mechanism of barrier formation on these surfaces. As in case of 3C and 6H-SiC, the barrier heights depend strongly upon method of surface preparation with a considerable scatter in the barrier height for a given metal-semiconductor system. However, for each metal the barrier height depends on the metal work function and strong pinning of the Fermi level has not been observed. The slopes of the linear relation between the barrier heights and metal work functions varies over a wide range from 0.2 to about 0.75 indicating that the density of interface states depends strongly on the method of surface preparation. By a careful examination of the data on barrier heights we could identify a set of nearly ideal interfaces in which the barrier heights vary linearly with metal work function approaching almost to the Schottky limit. The density of interface states for these interfaces is estimated to lie between 4.671012 to 2.631012 states/ cm2 eV on the silicon rich surface and about three times higher on the carbon rich faces. We also observed that on these ideal interfaces the density of interface states was almost independent of metal indicating that the metal induced gap states (MIGS) play no role in determining the barrier heights in metal-4H-SiC Schottky barriers.

Negative Electron Affinity Effects And Schottky Barrier Height Measurements Of Metals On Diamond (100) Surfaces

1995 ◽  
Vol 416 ◽  
Author(s):  
P. K. Baumann ◽  
R. J. Nemanich
Keyword(s):  
Schottky Barrier ◽  
Electron Affinity ◽  
Metal Layer ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Negative Electron Affinity ◽  
Barrier Heights ◽  
Diamond Crystals ◽  
Natural Type ◽  
Semiconducting Diamond

ABSTRACTIn this study copper and cobalt films have been deposited on natural type IIb single crystal semiconducting diamond (100) surfaces in ultra-high vacuum (UHV). Prior to metal deposition the diamond crystals have been cleaned by a 1150°C anneal in UHV. This treatment resulted in positive electron affinity surfaces. Upon deposition of 2Å of Cu or Co a negative electron affinity (NEA) was observed. Schottky barrier heights of 0.70 eV and 0.35 eV were found for Cu and Co respectively. In-situ Auger electron spectroscopy (AES) was employed to confirm the presence of a metal layer.

The influence of metal work function on the barrier heights of metal/pentacene junctions

2008 ◽  
Vol 103 (6) ◽  
pp. 063719 ◽  
Author(s):  
B. Jaeckel ◽  
J. B. Sambur ◽  
B. A. Parkinson
Keyword(s):  
Work Function ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Metal Work

Low Schottky Barrier on N-Type Si for N-Channel Schottky Source/Drain MOSFETs

2003 ◽  
Vol 765 ◽  
Author(s):  
Meng Tao ◽  
Darshak Udeshi ◽  
Shruddha Agarwal ◽  
Nasir Basit ◽  
Eduardo Maldonado ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Atomic Scale ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Metal Silicides ◽  
The Common ◽  
Work Functions ◽  
Metal Work ◽  
Density Of Interface States ◽  
The Ideal

AbstractSchottky source/drain (S/D) in Si-CMOS provide an alternative to current approaches in S/D, channel, and gate-stack engineering. The Schottky S/D PMOS has been demonstrated at a number of university and industrial laboratories. The bottleneck for the Schottky S/D NMOS is the fact that none of the common metals or metal silicides has a low enough barrier height (~0.2 eV) on n-type Si. A method to produce low Schottky barriers on n-type Si with common metals including aluminum (Al) and chromium (Cr) is reported in this paper. The interface between metal and Si(100) is engineered at the atomic scale with a monolayer of selenium (Se) to reduce the density of interface states, and the engineered interface shows inertness to chemical and electronic processes at the interface. One consequence of this electronic inertness is that the Schottky barrier is now more dependent on the metal work function. Al and Cr both have work functions very close to the Si electron affinity. It is found that the Schottky barrier of Al on Se-engineered n-type Si(100) is 0.08 eV, and that of Cr is 0.26 eV. These numbers agree well with the ideal Schottky barrier heights for Al and Cr on n-type Si(100), but are significantly different from the barrier heights known for four decades for these metals on n-type Si(100). These results bring new hope for the Schottky S/D NMOS with a metal commonly used in the Si industry.

scholarly journals Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 319-327 ◽  
Author(s):  
Jenifer R. Hajzus ◽  
Adam J. Biacchi ◽  
Son T. Le ◽  
Curt A. Richter ◽  
Angela R. Hight Walker ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Individual Solution ◽  
Specific Contact ◽  
Metal Work

Four different metals were patterned onto individual, solution-synthesized SnS nanoribbons to determine Schottky barrier heights and specific contact resistances.

Barrier heights of Schottky contacts on strained AlGaN/GaN heterostructures: Determination and effect of metal work functions

2003 ◽  
Vol 82 (24) ◽  
pp. 4364-4366 ◽  
Author(s):  
Zhaojun Lin ◽  
Wu Lu ◽  
Jaesun Lee ◽  
Dongmin Liu ◽  
Jeffrey S. Flynn ◽  
...  
Keyword(s):  
Schottky Contacts ◽  
Barrier Heights ◽  
Work Functions ◽  
Metal Work

Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability

Nano Futures ◽  
2021 ◽  
Author(s):  
Min-Won Kim ◽  
Ji-Hun Kim ◽  
Jun-Seong Park ◽  
Byoung-Seok Lee ◽  
Sangdong Yoo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Thermal Instability ◽  
Schottky Contact ◽  
Memory Cell ◽  
Cross Point ◽  
Operation Temperature ◽  
Metal Work Function ◽  
Metal Work ◽  
Contact Metal

Abstract In a two-terminal-electrode vertical thyristor, the latch-up and latch-down voltages are decreased when the memory operation temperature of the memory cells increases, resulting in a severe reliability issue (i.e., thermal instability). This study fundamentally solves the thermal instability of a vertical-thyristor by achieving a cross-point memory-cell array using a vertical-thyristor with a structure of vertical n++-emitter, p+-base, n+-base, and p++-emitter. The vertical-thyristor using a Schottky contact metal emitter instead of an n++-Si emitter significantly improves the thermal stability between 293 and 373 K. Particularly, the improvement degree of the thermal stability is increased significantly with the use of the Schottky contact metal work function. Because the thermal instability (i.e., degree of latch-up voltage decrement vs. memory operation temperature) decreases with an increase in the Schottky contact metal work function, the dependency of the forward current density between the Schottky contact metal and p+-Si based on the memory operation temperature reduces with increase in the Schottky contact metal work function. Consequently, a higher Schottky contact metal work function produces a higher degree of improvement in the thermal stability, i.e., W (4.50 eV), Ti (4.33 eV), Ta (4.25 eV), and Al (4.12 eV). Further research on the fabrication process of a Schottky contact metal emitter vertical-thyristor is essential for the fabrication of a 3-D cross-point memory-cell.

Passivation of Gaas by Novel P2S5/(NH4)2Sx Sulfurization Techniques

1992 ◽  
Vol 281 ◽  
Author(s):  
J. T. Hsieh ◽  
C. Y. Sun ◽  
H. L. Hwang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Schottky Diodes ◽  
Lower Surface ◽  
State Density ◽  
Surface Band ◽  
Band Bending ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Metal Work

ABSTRACTA new surface passivation technique using P2S5/(NH4)2S on GaAs was investigated, and the results are compared with those of the (NH4)2Sx treatment. With this new surface treatment, the effective barrier heights for both Al- and Au—GaAs Schottky diodes were found to vary with the metal work functions, which is a clear evidence of the lower surface state density. Results of I—V measurements show that P2S5/(NH4)2S—passivated diodes have lower reverse leakage current and higher effective barrier height than those of the (NH4)2Sx -treated ones. Auger Electron Spectroscopy, X—ray photoelectron spectroscopy and Raman scattering measurements were done to characterize the surfaces including their compositions and surface band bending. In this paper, interpretations on this novel passivation effect is also provided.

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