The influence of metal work function on the barrier heights of metal/pentacene junctions

2008 ◽  
Vol 103 (6) ◽  
pp. 063719 ◽  
Author(s):  
B. Jaeckel ◽  
J. B. Sambur ◽  
B. A. Parkinson
Keyword(s):  
Work Function ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Metal Work

Interface States and Barrier Heights on Metal/4H-SiC Interfaces

2009 ◽  
Vol 615-617 ◽  
pp. 427-430 ◽  
Author(s):  
Shaweta Khanna ◽  
Arti Noor ◽  
Man Singh Tyagi ◽  
Sonnathi Neeleshwar
Keyword(s):  
Work Function ◽  
Barrier Height ◽  
Surface Preparation ◽  
Interface States ◽  
Careful Examination ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Wide Range ◽  
Metal Work ◽  
Density Of Interface States

Available data on Schottky barrier heights on silicon and carbon rich faces of 4H-SiC have been carefully analyzed to investigate the mechanism of barrier formation on these surfaces. As in case of 3C and 6H-SiC, the barrier heights depend strongly upon method of surface preparation with a considerable scatter in the barrier height for a given metal-semiconductor system. However, for each metal the barrier height depends on the metal work function and strong pinning of the Fermi level has not been observed. The slopes of the linear relation between the barrier heights and metal work functions varies over a wide range from 0.2 to about 0.75 indicating that the density of interface states depends strongly on the method of surface preparation. By a careful examination of the data on barrier heights we could identify a set of nearly ideal interfaces in which the barrier heights vary linearly with metal work function approaching almost to the Schottky limit. The density of interface states for these interfaces is estimated to lie between 4.671012 to 2.631012 states/ cm2 eV on the silicon rich surface and about three times higher on the carbon rich faces. We also observed that on these ideal interfaces the density of interface states was almost independent of metal indicating that the metal induced gap states (MIGS) play no role in determining the barrier heights in metal-4H-SiC Schottky barriers.

scholarly journals Contacts to solution-synthesized SnS nanoribbons: dependence of barrier height on metal work function

Nanoscale ◽  
2018 ◽  
Vol 10 (1) ◽  
pp. 319-327 ◽  
Author(s):  
Jenifer R. Hajzus ◽  
Adam J. Biacchi ◽  
Son T. Le ◽  
Curt A. Richter ◽  
Angela R. Hight Walker ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Barrier Heights ◽  
Metal Work Function ◽  
Individual Solution ◽  
Specific Contact ◽  
Metal Work

Four different metals were patterned onto individual, solution-synthesized SnS nanoribbons to determine Schottky barrier heights and specific contact resistances.

Two-terminal vertical thyristor using Schottky contact emitter to improve thermal instability

Nano Futures ◽  
2021 ◽  
Author(s):  
Min-Won Kim ◽  
Ji-Hun Kim ◽  
Jun-Seong Park ◽  
Byoung-Seok Lee ◽  
Sangdong Yoo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Work Function ◽  
Thermal Instability ◽  
Schottky Contact ◽  
Memory Cell ◽  
Cross Point ◽  
Operation Temperature ◽  
Metal Work Function ◽  
Metal Work ◽  
Contact Metal

Abstract In a two-terminal-electrode vertical thyristor, the latch-up and latch-down voltages are decreased when the memory operation temperature of the memory cells increases, resulting in a severe reliability issue (i.e., thermal instability). This study fundamentally solves the thermal instability of a vertical-thyristor by achieving a cross-point memory-cell array using a vertical-thyristor with a structure of vertical n++-emitter, p+-base, n+-base, and p++-emitter. The vertical-thyristor using a Schottky contact metal emitter instead of an n++-Si emitter significantly improves the thermal stability between 293 and 373 K. Particularly, the improvement degree of the thermal stability is increased significantly with the use of the Schottky contact metal work function. Because the thermal instability (i.e., degree of latch-up voltage decrement vs. memory operation temperature) decreases with an increase in the Schottky contact metal work function, the dependency of the forward current density between the Schottky contact metal and p+-Si based on the memory operation temperature reduces with increase in the Schottky contact metal work function. Consequently, a higher Schottky contact metal work function produces a higher degree of improvement in the thermal stability, i.e., W (4.50 eV), Ti (4.33 eV), Ta (4.25 eV), and Al (4.12 eV). Further research on the fabrication process of a Schottky contact metal emitter vertical-thyristor is essential for the fabrication of a 3-D cross-point memory-cell.

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