Kinetic Studies of Nanoscale Crystallization in Electronic Materials

1995 ◽  
Vol 405 ◽  
Author(s):  
C. Hayzelden ◽  
J. L. Batstone

AbstractWe report a kinetic analysis of low-temperature NiSi2-mediated crystallization of amorphous Si by in situ transmission electron microscopy. The initiation of crystallization by formation of crystalline Si on buried NiSi2 precipitates is shown to have an activation energy of 2.8±0.7eV. Crystallization of the amorphous Si via migrating precipitates of NiSi2 occurs with an activation energy of 2.0±0.2eV. The significance of these activation energies is discussed in terms of possible atomistic mechanisms of crystalline Si initiation and subsequent growth. Amorphous Si is reported to crystallize at temperatures as low as 450°C.

2019 ◽  
Vol 55 (27) ◽  
pp. 3876-3878 ◽  
Author(s):  
Eleonora Aneggi ◽  
Jordi Llorca ◽  
Alessandro Trovarelli ◽  
Mimoun Aouine ◽  
Philippe Vernoux

In situ environmental transmission electron microscopy discloses room temperature carbon soot oxidation by ceria–zirconia at the nanoscale.


2009 ◽  
Vol 105 (9) ◽  
pp. 093506 ◽  
Author(s):  
Alessandra Alberti ◽  
Corrado Bongiorno ◽  
Cristian Mocuta ◽  
Till Metzger ◽  
Corrado Spinella ◽  
...  

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
J.B. Posthill ◽  
R.J. Markunas

AbstractA low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.


Catalysts ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 720 ◽  
Author(s):  
Junwen Wang ◽  
Lichao Ma ◽  
Chuanmin Ding ◽  
Yanan Xue ◽  
Yongkang Zhang ◽  
...  

Highly dispersed ultra-small Pt nanoparticles limited in nanosized silicalite-1 zeolite were prepared by in situ encapsulation strategy using H2PtCl6·6H2O as a precursor and tetrapropylammonium hydroxide as a template. The prepared Pt@S-1 catalyst was characterized by X-ray diffraction (XRD), inductively coupled plasma (ICP), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), N2 adsorption-desorption, CO adsorption, and TGA techniques and exhibited unmatched catalytic activity and sintering resistance in the partial oxidation of methane to syngas. Strikingly, Pt@S-1 catalyst with further reduced size and increased dispersibility of Pt nanoparticles showed enhanced catalytic activity after low-temperature oxygen calcination. However, for Pt/S-1 catalyst, low-temperature oxygen calcination did not improve its catalytic activity.


1998 ◽  
Vol 4 (3) ◽  
pp. 308-316 ◽  
Author(s):  
R. Hull ◽  
J. Demarest ◽  
D. Dunn ◽  
E.A. Stach ◽  
Q. Yuan

We discuss the application of ion microscopy and in situ electron microscopy to the study of electronic and optical materials and devices. We demonstrate how the combination of in situ transmission electron microscopy and focused ion beam microscopy provides new avenues for the study for such structures, enabling extension of these techniques to the study of dopant distributions, nanoscale stresses, three-dimensional structural and chemical reconstruction, and real-time evolution of defect microstructure. We also discuss in situ applications of thermal, mechanical, electrical, and optical stresses during transmission electron microscopy imaging.


2004 ◽  
Vol 821 ◽  
Author(s):  
L. H. Zhang ◽  
E. Johnson ◽  
U. Dahmen

AbstractThe evolution of elastic strain caused by melting and solidification of small inclusions in aluminum was investigated by in-situ transmission electron microscopy. The appearance and subsequent decay of elastic strain during phase transformation of inclusions around 100nm in size were observed directly, and the decay rate was determined as a function of temperature. The mechanism of strain accommodation was studied by determining the activation energy of the process using alloy composition and inclusion size to control the transformation temperature.


1992 ◽  
Vol 279 ◽  
Author(s):  
F. Fortuna ◽  
M. -O. Ruault ◽  
H. Bernas ◽  
H. Gu ◽  
C. Colliex

ABSTRACTBy first growing NiSi2 precipitates in a-Si and then irradiating with a 150 keV Si beam, we have studied ion beam induced epitaxial crystallization (IBIEC) of Si initiated at a-Si/NiSi2 precipitate interfaces. The growth shape and its temperature dependence are studied in-beam via in situ transmission electron microscopy. Interface roughening is evidenced. Preliminary results for the Co-Si system are also reported.


Author(s):  
Andrzej Żak ◽  
Anna Dańczak ◽  
Włodzimierz Dudziński

This work presents the results of research on a Co49Ni21Ga30 magnetic shape memory single crystal. Based on a literature review, it was identified that analyses of phase transformations have been limited to specific heating and cooling rates, which could lead to an incomplete description of the resulting phenomena. Differential scanning calorimetry (DSC) performed with different heating/cooling rates enabled the precise determination of enthalpy values, which deviate from literature values. Weak and previously unnoticed thermal phenomena at temperatures below 190 K were also observed. Their presence was confirmed by low-temperature in situ transmission electron microscopy (TEM). Through DSC measurements and TEM observations, a model of the discovered phenomenon was proposed, which may have an impact on a better understanding of the physics of magnetic shape memory materials.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Ion Anghel ◽  
Gabriela Lisa ◽  
Ioana-Emilia Şofran ◽  
Flavia-Corina Mitroi-Symeonidis ◽  
Mihai Marius Rusu ◽  
...  

Abstract In this study, polystyrene composites (PS–GOf) with variable concentration (0.5; 1; 2; 3; 4; and 5 wt%) of GOf were obtained through the in-situ polymerisation of the styrene in the presence of benzoyl peroxide and graphene oxide(GO) functionalized with 3-(methacryloyloxy)-propyltrimethoxysilane(γ-MPTS). For determining the morphological and structural particularities of polymeric composites transmission electron microscopy (TEM) measurements were performed. The influence of functionalized GO on thermal and combustion properties of polystyrene (PS)-based composite materials was determined through several methods: Thermogravimetry (TGA); derived thermogravimetry (DTG); microscale combustion calorimetry analysis (MCC); and chemical kinetic studies through TGA and MCC determinations at similar heating rates.


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