Low temperature formation and evolution of a 10 nm amorphous Ni–Si layer on [001] silicon studied by in situ transmission electron microscopy

2009 ◽  
Vol 105 (9) ◽  
pp. 093506 ◽  
Author(s):  
Alessandra Alberti ◽  
Corrado Bongiorno ◽  
Cristian Mocuta ◽  
Till Metzger ◽  
Corrado Spinella ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Transmission Electron ◽  
Formation And Evolution

scholarly journals In situ environmental HRTEM discloses low temperature carbon soot oxidation by ceria–zirconia at the nanoscale

2019 ◽  
Vol 55 (27) ◽  
pp. 3876-3878 ◽  
Author(s):  
Eleonora Aneggi ◽  
Jordi Llorca ◽  
Alessandro Trovarelli ◽  
Mimoun Aouine ◽  
Philippe Vernoux
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Room Temperature ◽  
Soot Oxidation ◽  
Environmental Transmission ◽  
Transmission Electron ◽  
Carbon Soot ◽  
Environmental Transmission Electron Microscopy

In situ environmental transmission electron microscopy discloses room temperature carbon soot oxidation by ceria–zirconia at the nanoscale.

Low Temperature in Situ Cleaning of Si(100) Surfaces and Transmission Electron Microscopy of Subsequent Growth of Epitaxial Germanium

1988 ◽  
Vol 116 ◽  
Author(s):  
R.A. Rudder ◽  
S.V. Hattangady ◽  
J.B. Posthill ◽  
R.J. Markunas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Carbonaceous Material ◽  
High Energy ◽  
Wafer Surface ◽  
Hydrogen Treatment ◽  
Heteroepitaxial Growth ◽  
Transmission Electron

AbstractA low temperature process for cleaning Si(100) surfaces has been developed. It involves a combination of a modified hot RCA wet chemistry treatment and an in situ hydrogen treatment for the removal of oxides and carbonaceous material from the Si surface. While this treatment is successful in producing reflection high energy electron diffraction patterns which show 1/2-order reconstruction lines, subsequent Ge heteroepitaxial growth at 300°C contains a high density of microtwins. Transmission electron microscopy reveals that most of the microtwins do not propagate to the wafer surface. Furthermore, the Ge/Si interface is not abrupt, and there are regions that do not appear crystalline. This suggests that some contamination is still present on the Si(100) surface after the in situ hydrogen treatments.

scholarly journals In Situ Encapsulated Pt Nanoparticles Dispersed in Low Temperature Oxygen for Partial Oxidation of Methane to Syngas

Catalysts ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 720 ◽  
Author(s):  
Junwen Wang ◽  
Lichao Ma ◽  
Chuanmin Ding ◽  
Yanan Xue ◽  
Yongkang Zhang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Catalytic Activity ◽  
Low Temperature ◽  
Partial Oxidation ◽  
Pt Nanoparticles ◽  
Partial Oxidation Of Methane ◽  
Oxidation Of Methane ◽  
Transmission Electron

Highly dispersed ultra-small Pt nanoparticles limited in nanosized silicalite-1 zeolite were prepared by in situ encapsulation strategy using H2PtCl6·6H2O as a precursor and tetrapropylammonium hydroxide as a template. The prepared Pt@S-1 catalyst was characterized by X-ray diffraction (XRD), inductively coupled plasma (ICP), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), N2 adsorption-desorption, CO adsorption, and TGA techniques and exhibited unmatched catalytic activity and sintering resistance in the partial oxidation of methane to syngas. Strikingly, Pt@S-1 catalyst with further reduced size and increased dispersibility of Pt nanoparticles showed enhanced catalytic activity after low-temperature oxygen calcination. However, for Pt/S-1 catalyst, low-temperature oxygen calcination did not improve its catalytic activity.

Kinetic Studies of Nanoscale Crystallization in Electronic Materials

1995 ◽  
Vol 405 ◽  
Author(s):  
C. Hayzelden ◽  
J. L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Activation Energy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Electronic Materials ◽  
Kinetic Studies ◽  
Subsequent Growth ◽  
Transmission Electron ◽  
Amorphous Si

AbstractWe report a kinetic analysis of low-temperature NiSi2-mediated crystallization of amorphous Si by in situ transmission electron microscopy. The initiation of crystallization by formation of crystalline Si on buried NiSi2 precipitates is shown to have an activation energy of 2.8±0.7eV. Crystallization of the amorphous Si via migrating precipitates of NiSi2 occurs with an activation energy of 2.0±0.2eV. The significance of these activation energies is discussed in terms of possible atomistic mechanisms of crystalline Si initiation and subsequent growth. Amorphous Si is reported to crystallize at temperatures as low as 450°C.

Low-temperature martensite relaxation in Co–Ni–Ga shape memory alloy monocrystal revealed using in situ cooling, transmission electron microscopy and low rate calorimetry

2020 ◽  
Vol 76 (4) ◽  
pp. 563-571
Author(s):  
Andrzej Żak ◽  
Anna Dańczak ◽  
Włodzimierz Dudziński
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Shape Memory ◽  
Precise Determination ◽  
Magnetic Shape Memory ◽  
Scanning Calorimetry ◽  
Cooling Rates ◽  
Transmission Electron

This work presents the results of research on a Co49Ni21Ga30 magnetic shape memory single crystal. Based on a literature review, it was identified that analyses of phase transformations have been limited to specific heating and cooling rates, which could lead to an incomplete description of the resulting phenomena. Differential scanning calorimetry (DSC) performed with different heating/cooling rates enabled the precise determination of enthalpy values, which deviate from literature values. Weak and previously unnoticed thermal phenomena at temperatures below 190 K were also observed. Their presence was confirmed by low-temperature in situ transmission electron microscopy (TEM). Through DSC measurements and TEM observations, a model of the discovered phenomenon was proposed, which may have an impact on a better understanding of the physics of magnetic shape memory materials.

Low-temperature annealing of YBa2Cu3O7-x

1992 ◽  
Vol 50 (1) ◽  
pp. 88-89
Author(s):  
R.L. Sabatini ◽  
Yimei Zhu ◽  
Masaki Suenaga ◽  
A.R. Moodenbaugh
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Low Temperature ◽  
Oxygen Diffusion ◽  
Diffusion Rate ◽  
Oxygen Depletion ◽  
Low Temperature Annealing ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Oxygen Diffusion Rate

Low temperature annealing (<400°C) of YBa2Cu3O7x in a ozone containing oxygen atmosphere is sometimes carried out to oxygenate oxygen deficient thin films. Also, this technique can be used to fully oxygenate thinned TEM specimens when oxygen depletion in thin regions is suspected. However, the effects on the microstructure nor the extent of oxygenation of specimens has not been documented for specimens exposed to an ozone atmosphere. A particular concern is the fact that the ozone gas is so reactive and the oxygen diffusion rate at these temperatures is so slow that it may damage the specimen by an over-reaction. Thus we report here the results of an investigation on the microstructural effects of exposing a thinned YBa2Cu3O7-x specimen in an ozone atmosphere using transmission electron microscopy and energy loss spectroscopy techniques.

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

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