Reduction of Lateral Dimension on InGaAs/GaAs Multilayers on Non-(111) V-Grooved GaAs(100) Substrate by Chemical Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-405-49 ◽

1995 ◽

Vol 405 ◽

Author(s):

Sung-Bock Kim ◽

Jeong-Rae Ro ◽

Seong-Ju Park ◽

El-Hang Lee

Keyword(s):

Growth Rate ◽

Quantum Wire ◽

Chemical Beam Epitaxy ◽

Optimum Growth ◽

Improved Method ◽

Lateral Dimension ◽

Optimum Growth Temperature ◽

Gaas Substrates ◽

Effective Reduction ◽

Photoluminescence Peak

AbstractWe have found that the lateral dimension of InGaAs and GaAs multiple layers can be effectively controlled on non-( 111) V-grooved GaAs substrates by chemical beam epitaxy using triethylgallium and trimethylindium coupled with precracked arsine or unprecracked monoethylarsine. We suggest that this effect is due to the efficient migration of adatoms from (111) to non-(111) planes. This is an improved method which overcomes the difficulty that has been associated with the method of using only (111) V-grooves in which the lateral dimension is controlled by the differences in the growth rates between (111) and (100) planes. In case of InGaAs and GaAs epilayers, the anisotropy factors of growth rate were less than 0.1 at optimum growth temperature. Photoluminescence peak originated from InGaAs/GaAs quantum wire was significantly distinct from other peaks, suggesting an effective reduction of InGaAs lateral dimension.

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EFFECTS OF LOW TEMPERATURES ON THE GROWTH OF MARINE BACTERIA

Contributions to Canadian Biology and Fisheries ◽

10.1139/f33-034 ◽

1933 ◽

Vol 8 (1) ◽

pp. 489-505 ◽

Cited By ~ 6

Author(s):

ERNEST HESS

Keyword(s):

Growth Rate ◽

Pseudomonas Fluorescens ◽

Crop Yield ◽

Marine Bacteria ◽

Growth Temperature ◽

Low Temperatures ◽

Optimum Growth ◽

Optimum Growth Temperature ◽

Plate Counts ◽

Logarithmic Growth

Growth of Pseudomonas fluorescens, Flavobacterium deciduosum, and B. vulgatus (all of marine origin) in buffered nutrient broth at 37°, 20°, 5°, 0° and −3 °C. has been followed quantitatively by means of plate counts. Maximum crops were obtained at 5 °C. in all cases, and higher total crops at 0° and −3° than at 37° and 20°. Maximum crop yield is considered a better criterion for optimum growth temperature than the growth rate during logarithmic growth. These marine bacteria are therefore considered to be truly psychrophilic.

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The fabrication of quantum wire structures through application of CCl4 towards lateral growth rate control of GaAs on patterned GaAs substrates

Applied Physics Letters ◽

10.1063/1.114360 ◽

1995 ◽

Vol 67 (13) ◽

pp. 1871-1873 ◽

Cited By ~ 7

Author(s):

Yong Kim ◽

Yang Keun Park ◽

Moo‐Sung Kim ◽

Joon‐Mo Kang ◽

Seong‐Il Kim ◽

...

Keyword(s):

Growth Rate ◽

Rate Control ◽

Quantum Wire ◽

Lateral Growth ◽

Gaas Substrates ◽

Lateral Growth Rate ◽

Growth Rate Control

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Photo Modified Growth of GaAs by Chemical Beam Epitaxy

MRS Proceedings ◽

10.1557/proc-510-113 ◽

1998 ◽

Vol 510 ◽

Author(s):

R. Jothilingam ◽

T. Farrell ◽

T.B. Joyce ◽

P.J. Goodhew

Keyword(s):

Electron Microscopy ◽

Transmission Electron Microscopy ◽

Growth Rate ◽

Electrical Power ◽

Xenon Lamp ◽

Chemical Beam Epitaxy ◽

Cross Sectional ◽

Transmission Electron ◽

Substrate Temperatures ◽

Laser Reflectometry

AbstractWe report the photo modified growth of GaAs by chemical beam epitaxy at substrate temperatures in the range 335 to 670°C using triethygallium (TEG) and arsine. A mercury-xenon lamp (electrical power 200 W) provided the irradiation for the photoassisted growth. The growth was monitored in real time by laser reflectometry (LR) using a 670 nm semiconductor laser, and the optically determined growth rate agreed with that obtained from the layer thickness measured by cross sectional transmission electron microscopy. The observed photo-enhancement of the growth rate at low substrate temperatures and inhibition at high substrate temperatures is thermal in origin, consistent with raising the substrate temperature by 10±3°C. Cross sectional transmission electron microscopy showed that the photoassisted layers are essentially free from dislocations

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Room temperature lasing of quantum wire VCSELs by optical pumping grown on the B GaAs substrates by MBE

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/s1386-9477(02)00228-x ◽

2002 ◽

Vol 13 (2-4) ◽

pp. 892-895 ◽

Cited By ~ 6

Author(s):

Y Ohno ◽

H Kanamori ◽

S Shimomura ◽

S Hiyamizu

Keyword(s):

Quantum Wire ◽

Room Temperature ◽

Optical Pumping ◽

Gaas Substrates

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Differentiation of Isolates of Glomerella cingulata and Colletotrichum spp. Associated with Glomerella Leaf Spot and Bitter Rot of Apples Using Growth Rate, Response to Temperature, and Benomyl Sensitivity

Plant Health Progress ◽

10.1094/php-2005-0719-01-rs ◽

2005 ◽

Vol 6 (1) ◽

pp. 6 ◽

Cited By ~ 1

Author(s):

Eugenia González ◽

Turner B. Sutton

Keyword(s):

Growth Rate ◽

Leaf Spot ◽

Molecular Diversity ◽

Colletotrichum Gloeosporioides ◽

Glomerella Cingulata ◽

Optimum Growth Temperature ◽

Bitter Rot ◽

Colletotrichum Spp ◽

Glomerella Leaf Spot ◽

Response To Temperature

Cultural characteristics were investigated as a way to distinguish isolates of Glomerella cingulata and Colletotrichum spp. associated with Glomerella leaf spot and bitter rot of apples from those that cause only bitter rot. The growth rate, response to temperature, and benomyl sensitivity of 27 isolates of Glomerella cingulata, 12 isolates of Colletotrichum gloeosporioides, and 7 isolates of C. acutatum, collected from apple orchards located in the U.S. and Brazil and previously characterized based on morphology, vegetative compatibility, and mitochondrial DNA (mtDNA) haplotypes, were determined. These isolates represent the genetic and molecular diversity within isolates of C. gloeosporioides, C. acutatum, and G. cingulata from apples found in a previous study. Slower growth, lower optimum growth temperature, and less sensitivity to benomyl distinguished isolates of C. acutatum from isolates of G. cingulata and C. gloeosporioides. However, growth rate and benomyl sensitivity were not useful for distinguishing between G. cingulata and C. gloeosporioides or differentiating isolates of G. cingulata that cause leaf spot and bitter rot from those that only cause bitter rot. Accepted for publication 17 May 2005. Published 19 July 2005.

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Effet de la température d'incubation sur la composition lipidique de Corynébacteriacées du genre Arthrobacter

Canadian Journal of Microbiology ◽

10.1139/m82-042 ◽

1982 ◽

Vol 28 (3) ◽

pp. 284-290 ◽

Cited By ~ 6

Author(s):

N. Canillac ◽

M. T. Pommier ◽

A. M. Gounot

Keyword(s):

Fatty Acids ◽

Growth Temperature ◽

Lipid Composition ◽

The Other ◽

Short Chain ◽

Optimum Growth ◽

Optimum Growth Temperature

Lipid composition of three Arthrobacter strains (mesophilic, psychrotrophic, and psychrophilic strains) grown at their optimum growth temperature was studied. Great differences appeared only in the nature of their fatty acids: the psychrophilic strain synthesized less linear acids, C17 acids, and more iso isomers than the other two strains.Incubation of the three strains at temperatures below their optimum resulted in variations only in proportion of the different fatty acids: increase of the ratio of unsaturated, of branched, and of short-chain fatty acids.The relation between lipid composition and ability to grow at temperatures around 0 °C is discussed.

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Optimum growth conditions for the epitaxy of GaAs on Ge by close-spaced vapor transport

Canadian Journal of Physics ◽

10.1139/p94-034 ◽

1994 ◽

Vol 72 (5-6) ◽

pp. 225-232 ◽

Cited By ~ 9

Author(s):

G. Lalande ◽

N. Guelton ◽

D. Cossement ◽

R. G. Saint-Jacques ◽

J. P. Dodelet

Keyword(s):

Growth Rate ◽

Solar Cells ◽

Water Vapor ◽

Substrate Temperature ◽

Growth Conditions ◽

Vapor Transport ◽

Temperature Evolution ◽

Threading Dislocations ◽

Optimum Growth ◽

Antiphase Boundaries

GaAs epitaxial layers are grown by close-spaced vapor transport (CSVT) on (100)Ge substrates and (100)Ge substrates misoriented 1.5° and 3° toward (011). Water vapor is used as the transport agent. When the temperatures of the GaAs source (T1) and of the Ge substrate (T2) are 800 and 750 °C, respectively, the growth rate is about 3 μm h−1. When an optimum source–substrate temperature evolution is followed, it is possible to grow specular layers of GaAs/Ge that contain only a small number (< 105 cm−2) of threading dislocations. All antiphase boundaries (APBs) annihilate close to the interface (from about 230 nm for (100)Ge substrates to about 65 nm for vicinal (3° off) (100)Ge substrates). The GaAs growth occurs via the coalescence of 3D nuclei that are formed on an arsenic prelayer n-type GaAs layers are always obtained. By encapsulating the Ge substrate, it is possible to drastically decrease the autodoping resulting from the transport of Ge by water vapor in the same growth conditions as those prevailing for GaAs. After encapsulation, uncompensated doping densities ND – NA in the order of 5 × 1016 cm−3 are easily obtained for GaAs/Ge films grown from undoped semi-insulating GaAs sources. These GaAs/Ge layers can be used as bases for solar cells.

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THE EFFECT OF CONFINEMENT HOUSING UPON THE INCIDENCE OF LEG WEAKNESS IN SWINE

Canadian Journal of Animal Science ◽

10.4141/cjas82-131 ◽

1982 ◽

Vol 62 (4) ◽

pp. 1119-1128 ◽

Cited By ~ 15

Author(s):

A. P. SATHER ◽

H. T. FREDEEN

Keyword(s):

Growth Rate ◽

Cartilage Damage ◽

Optimum Growth ◽

Live Animal ◽

Housing Growth ◽

System P ◽

Structural Weakness ◽

Condition Score ◽

Key Words Pig ◽

Leg Weakness

Live animal evaluation for soundness of foreleg (FL), hindleg (HL), and hip (HP) and postslaughter cartilage condition score (CCS) of the elbow were recorded for 257 Lacombe male castrates (barrows) and gilts, housed either singly or in groups of four in confinement or in groups of 12 in large outside pig lots. Barrows had poorer FL, HL and HP scores than did gilts (P = 0.111, 0.032 and 0.001, respectively). Management system (P = 0.005, 0.001 and 0.001) and its interaction with sex (P = 0.096, 0.016 and 0.023) also affected the scoring of the FL, HL and HP, respectively. Single and group-confinement-housed gilts did not differ in leg weakness or CCS, while singly penned barrows suffered greater cartilage damage (P = 0.037). In general, confinement-housed pigs had greater leg weakness of FL, RL, and HP (P < 0.001), but this effect was attributed almost entirely to barrows (P < 0.001). No meaningful correlations were found between leg weakness and average backfat. The correlations between FL and preweaning (−0.23) and post-weaning ADG (−0.24) suggest that a prerequisite for optimum growth rate is structural soundness. Confinement housing and not growth rate appears to be the primary factor contributing towards the incidence and severity of structural weakness in the pig. Key words: Pig, leg weakness, swine management, confinement housing, growth rate, backfat

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