The fabrication of quantum wire structures through application of CCl4 towards lateral growth rate control of GaAs on patterned GaAs substrates

1995 ◽  
Vol 67 (13) ◽  
pp. 1871-1873 ◽  
Author(s):  
Yong Kim ◽  
Yang Keun Park ◽  
Moo‐Sung Kim ◽  
Joon‐Mo Kang ◽  
Seong‐Il Kim ◽  
...  
Keyword(s):  
Growth Rate ◽  
Rate Control ◽  
Quantum Wire ◽  
Lateral Growth ◽  
Gaas Substrates ◽  
Lateral Growth Rate ◽  
Growth Rate Control

Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD

1997 ◽  
Vol 170 (1-4) ◽  
pp. 665-668 ◽  
Author(s):  
Seong-Il Kim ◽  
Moo-Sung Kim ◽  
Yong Kim ◽  
Seong-Min Hwang ◽  
Byung-Don Min ◽  
...  
Keyword(s):  
Growth Rate ◽  
Rate Control ◽  
Lateral Growth ◽  
Patterned Substrates ◽  
Lateral Growth Rate ◽  
Growth Rate Control

Power law of molecular weight dependence of lateral growth rate of isotactic polypropylene

Polymer ◽  
2006 ◽  
Vol 47 (21) ◽  
pp. 7601-7606 ◽  
Author(s):  
Koji Yamada ◽  
Kaori Watanabe ◽  
Kiyoka Okada ◽  
Akihiko Toda ◽  
Masamichi Hikosaka
Keyword(s):  
Molecular Weight ◽  
Growth Rate ◽  
Power Law ◽  
Isotactic Polypropylene ◽  
Lateral Growth ◽  
Molecular Weight Dependence ◽  
Lateral Growth Rate

Effects of the lateral growth rate on wood quality parameters of Eucalyptus grandis from different latitudes in Brazil and Argentina

2009 ◽  
Vol 257 (10) ◽  
pp. 2175-2181 ◽  
Author(s):  
Miho Kojima ◽  
Fabio Minoru Yamaji ◽  
Hiroyuki Yamamoto ◽  
Masato Yoshida ◽  
Takahisa Nakai
Keyword(s):  
Growth Rate ◽  
Wood Quality ◽  
Eucalyptus Grandis ◽  
Quality Parameters ◽  
Lateral Growth ◽  
Lateral Growth Rate

In situ growth rate control of carbon nanotubes by optical imaging method

2007 ◽  
Vol 91 (19) ◽  
pp. 193102 ◽  
Author(s):  
Itaru Gunjishima ◽  
Takashi Inoue ◽  
Atsuto Okamoto
Keyword(s):  
Carbon Nanotubes ◽  
Growth Rate ◽  
Optical Imaging ◽  
Rate Control ◽  
Imaging Method ◽  
In Situ Growth ◽  
Growth Rate Control

scholarly journals Specific Growth Rate control in Fed-Batch Bakers' Yeast Fermentation

1993 ◽  
Vol 26 (2) ◽  
pp. 185-188
Author(s):  
M. Keulers ◽  
L. Ariaans ◽  
M. Giuseppin ◽  
R. Soeterboek
Keyword(s):  
Growth Rate ◽  
Specific Growth Rate ◽  
Rate Control ◽  
Specific Growth ◽  
Yeast Fermentation ◽  
Fed Batch ◽  
Growth Rate Control

Reduction of Lateral Dimension on InGaAs/GaAs Multilayers on Non-(111) V-Grooved GaAs(100) Substrate by Chemical Beam Epitaxy

1995 ◽  
Vol 405 ◽  
Author(s):  
Sung-Bock Kim ◽  
Jeong-Rae Ro ◽  
Seong-Ju Park ◽  
El-Hang Lee
Keyword(s):  
Growth Rate ◽  
Quantum Wire ◽  
Chemical Beam Epitaxy ◽  
Optimum Growth ◽  
Improved Method ◽  
Lateral Dimension ◽  
Optimum Growth Temperature ◽  
Gaas Substrates ◽  
Effective Reduction ◽  
Photoluminescence Peak

AbstractWe have found that the lateral dimension of InGaAs and GaAs multiple layers can be effectively controlled on non-( 111) V-grooved GaAs substrates by chemical beam epitaxy using triethylgallium and trimethylindium coupled with precracked arsine or unprecracked monoethylarsine. We suggest that this effect is due to the efficient migration of adatoms from (111) to non-(111) planes. This is an improved method which overcomes the difficulty that has been associated with the method of using only (111) V-grooves in which the lateral dimension is controlled by the differences in the growth rates between (111) and (100) planes. In case of InGaAs and GaAs epilayers, the anisotropy factors of growth rate were less than 0.1 at optimum growth temperature. Photoluminescence peak originated from InGaAs/GaAs quantum wire was significantly distinct from other peaks, suggesting an effective reduction of InGaAs lateral dimension.

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