Photoluminescence Properties of Er-Doped Porous Silicon

1995 ◽  
Vol 405 ◽  
Author(s):  
U. Hömmerich ◽  
X. Wu ◽  
F. Namavar ◽  
A. M. Cremins-Costa ◽  
K. L. Bray
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Power Dependence ◽  
Photoluminescence Properties ◽  
Porous Si ◽  
Temperature Quenching ◽  
Photoluminescence Study ◽  
Visible Luminescence ◽  
Excitation Mechanisms ◽  
Er Doped

AbstractWe present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650°C for 30 minutes. Room-temperature 1.54μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.

Fast Photoluminescence from Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
V. Petrova-Koch ◽  
T. Muschik ◽  
D. I. Kovalev ◽  
F. Koch ◽  
V. Lehmann
Keyword(s):  
Porous Silicon ◽  
Response Time ◽  
Spectral Range ◽  
Luminescence Band ◽  
Room Temperature ◽  
Internal Surface ◽  
Porous Si ◽  
Time Resolved ◽  
Processed Material ◽  
Defect Luminescence

ABSTRACTTime-resolved studies of the visible photoluminescence in porous silicon with three different coverages of the internal surface are reported. We use aged, naturally oxidized porous Si (oxihydride), rapid thermal processed material (oxide) and samples stored in HF (pure hydride). A new, fast luminescence band in the blue-green spectral range and with response time less than 100 ns is observed at room temperature in each of the samples, although with different intensities. The observations prove that this is not an oxide-defect luminescence. We speculate on mechanisms for the origin of the fast luminescence in nanometer-size crystallites of Si.

Room Temperature Photoluminescence of Er-Doped Porous Silicon at 1.54μm

1994 ◽  
Author(s):  
Tadamasa KIMURA ◽  
Akinori YOKOI ◽  
Hisakazu HORIGUCHI ◽  
Riyu IKEDA ◽  
Riichiro SAITO ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Er Doped

Influence of AgNO3 on Photoluminescence Properties of Porous Silicon

2012 ◽  
Vol 486 ◽  
pp. 239-242 ◽  
Author(s):  
Hong Yan Zhang ◽  
Xiao Yi Lv ◽  
Zhen Hong Jia
Keyword(s):  
Silver Nanoparticles ◽  
Porous Silicon ◽  
Specific Surface ◽  
Room Temperature ◽  
Photoluminescence Properties ◽  
Pl Intensity ◽  
Made In

Porous silicon (PS) has the strong photoluminescence (PL) at room temperature and high specific surface. In this paper, we have fabricated the PS coated with silver nanoparticles as a substrate. The result shows that the substrate made in this way is stable for more than twenty days and the strong PL intensity of PS is around 584nm after immersed into solution of AgNO3. The formation of SiAg bond was demonstrated to be responsible for the improvement of PL properties.

Er-Implanted Porous Silicon: a Novel Material for Si-Based Infrared LEDs

1994 ◽  
Vol 358 ◽  
Author(s):  
Fereydoon Namavar ◽  
F. Lu ◽  
C.H. Perry ◽  
A. Cremins ◽  
N.M. Kalkhoran ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Wide Bandgap ◽  
Device Fabrication ◽  
Porous Si ◽  
High Concentration ◽  
Light Emitting ◽  
Novel Material ◽  
Bandgap Semiconductors ◽  
Ir Emission

ABSTRACTWe have demonstrated a strong, room-temperature, 1.54 μm emission from erbium-implanted at 190 keV into red-emitting porous silicon. Luminescence data showed that the intensity of infrared (IR) emission from Er implanted porous Si annealed at ≤ 650°C, was a few orders of magnitude stronger than Er implanted quartz produced under identical conditions, and was almost comparable to IR emission from In0.53Ga0.47As material which is used for commercial IR light-emitting diodes (LEDs).The strong IR emission (much higher than Er in quartz) and the weak temperature dependency of Er in porous Si, which is similar to Er3+ in wide-bandgap semiconductors, suggests that Er is not in SiO2 or Si with bulk properties but, may be confined in Si light-emitting nanostructures. Porous Si is a good substrate for rare earth elements because: 1) a high concentration of optically active Er3+ can be obtained by implanting at about 200 keV, 2) porous Si and bulk Si are transparent to 1.54 μm emission therefore, device fabrication is simplified, and 3) although the external quantum efficiency of visible light from porous Si is compromised because of self-absorption, it can be used to pump Er3+.

Visible Luminescence from Porous Silicon and Siloxene: Recent Results

1992 ◽  
Vol 283 ◽  
Author(s):  
H. D. Fuchs ◽  
M. Rosenbauer ◽  
M. S. Brandt ◽  
S. Ernst ◽  
S. Finkbeiner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Time Dependent ◽  
Photoluminescence Excitation ◽  
Porous Si ◽  
Green Luminescence ◽  
Visible Luminescence ◽  
Optically Detected ◽  
Insight Into

ABSTRACTThe optical properties of porous Si (p-Si) are compared to those of siloxene and its derivatives in order to gain more insight into the mechanism of the luminescence observed in p-Si. We report new results of photoluminescence (PL), photoluminescence excitation (PLE), time-dependent and pressure-dependent photoluminescence, and optically detected magnetic resonance (ODMR). Important information about the structural, electronic, and microscopic nature of the two classes of materials are deduced from these experiments. Annealed siloxene and p-Si show very similar properties, suggesting that siloxene-related structures, e.g. electrically isolated Si6-rings, might be responsible for the luminescence in p-Si. The Si-planes in as-prepared siloxene, with their green luminescence, are metastable and are readily oxidized into red-luminescent siloxene configurations.

Structural Characterization of Porous Silicon Fabricated by Electrochemical and Chemical Dissolution of Si Wafers

1991 ◽  
Vol 256 ◽  
Author(s):  
S. Miyazaki ◽  
T. Yasaka ◽  
K. Okamoto ◽  
K. Shiba ◽  
K. Sakamoto ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electron Beam Irradiation ◽  
Complete Recovery ◽  
Porous Si ◽  
Beam Irradiation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Disordered Structure ◽  
Visible Luminescence

ABSTRACTThe structure of porous silicon exhibiting efficient visible photoluminescence has been characterized by using Fourier transformed infrared absorption, Raman scattering and x-ray diffraction. It is shown that the lattice spacing in the porous Si layer expands by about 0.3% in the direction perpendicular to the surface and also a partially disordered structure is existing. Electron beam irradiation causes desorption of hydrogen and fluorine bonds which terminate the surface, resulting in the quenching of the visible luminescence. The chemical etching of such layer has led to complete recovery of the luminescence intensity as well as the hydrogen and fluorine bonds termination.

Prospects for Infrared Electroluminescence From Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
F. Koch ◽  
A. Kux
Keyword(s):  
Porous Silicon ◽  
Bound States ◽  
Electrical Current ◽  
Infrared Light ◽  
Electrical Excitation ◽  
Porous Si ◽  
3 Dimensional ◽  
Spectral Bands ◽  
Visible Luminescence ◽  
Wide Gap

AbstractEfficient visible luminescence from porous Si requires the 3-dimensional confinement of charges in structures with typical ∼3nm size. Such microporously etched Si acts as an intrinsic wide-gap material and is highly resistive. The material does not have the good transport properties consistent with an efficient electrical excitation. We instead suggest to employ mesoporously etched, p+-type Si with its better conductivity in electroluminescence application. The material luminesces in two spectral bands centered about 0.8eV and 1.0eV in the infrared. Both emissions originate from surface-bound states. We report on the temperature dependence of luminescence, on transport and first attempts to generate infrared light by the injection of electrical current.

Unimportance of Siloxene in Luminescent Porous Silicon as Determined by Nexafs & Exafs

1993 ◽  
Vol 298 ◽  
Author(s):  
S.L. Friedman ◽  
M.A. Marcus ◽  
D.L. Adler ◽  
Y.-H. Xie ◽  
T.D. Harris ◽  
...  
Keyword(s):  
Fine Structure ◽  
Porous Silicon ◽  
Room Temperature ◽  
Emission Spectra ◽  
Porous Si ◽  
X Ray ◽  
Absorption Fine ◽  
X Ray Absorption ◽  
Room Temperature Luminescence ◽  
Combined Data

AbstractNear-edge-- and extended--x-ray absorption fine structure measurements, as well as luminescence excitation and emission spectra, were obtained from samples of porous Si and siloxene. Contrary to a recently proposed explanation for the room temperature luminescence in porous Si, the combined data indicate that siloxene is not principally responsible for the observed effect.

Er-Doped Porous Silicon Led For Integrated Optoelectronics

1997 ◽  
Vol 486 ◽  
Author(s):  
L. Tsybeskov ◽  
G. F. Grom ◽  
K. D. Hirschman ◽  
H. A. Lopez ◽  
S. Chan ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Silicon Oxide ◽  
Light Emitting Diode ◽  
Inert Atmosphere ◽  
Light Emitting ◽  
Doped Silicon ◽  
Recombination Centers ◽  
Er Doped

AbstractPorous silicon (PSi) was doped by Er using electromigration from a solution and converted to Er-doped silicon-rich silicon oxide (SRSO:Er) by partial thermal oxidation at 600–950°C following densification at 1100°C in an inert atmosphere. Room-temperature photoluminescence (PL) at ∼1.5 μm is intense and decreases by less than 20% from 12 K to 300 K. The PL spectrum of SRSO:Er reveals no luminescence bands related to Si-bandedgerecombination, point defects or dislocations, and shows that the Er3+ centers are the most efficient radiative recombination centers. A light-emitting diode (LED) with an active layer made of SRSO:Er was manufactured using a pre-oxidation cleaning step to increase the quality of the interface between SRSO:Er and the top electrode. Room temperature electroluminescence at ∼1.5 μm was demonstrated.

Characterization of Erbium Doped SiO2 Layers Formed On Silicon By Spark Processing

1997 ◽  
Vol 486 ◽  
Author(s):  
John V. St. John ◽  
Jeffery L. Coffer ◽  
Young Gyu Rho ◽  
Patrick Diehl ◽  
Russell F. Pinizzotto ◽  
...  
Keyword(s):  
Rare Earth ◽  
Porous Silicon ◽  
Porous Si ◽  
Rare Earth Ion ◽  
Temperature Oxidation ◽  
X Ray ◽  
Near Ir ◽  
Erbium Doped ◽  
Er Doped

AbstractDeposition of a rare earth salt layer on a silicon substrate with subsequent spark processing yields a porous Si layer and SiO 2 cap doped with the rare earth ion. We have characterized luminescent Er-doped porous SiO2 on Si by scanning electron microscopy, energy dispersive Xray spectroscopy, as well as visible and near IR photoluminescence (PL) spectroscopies. Energydispersive x-ray maps indicate that the erbium concentration in the porous layer can be controlled by varying the molarity of the erbium solution deposited on the substrate prior to spark processing. Visible PL measurements reveal that the concentration of Er3+ is proportional to the resultant intensity of the visible fluorescence transitions; however, for the near IR fluorescence peak at 1.54 gim, self-quenching due to erbium clustering occurs at higher concentrations. Erbium-doped porous silicon layers can also be obtained by diffusion of an erbium salt into porous silicon formed by anodic etching of Si in hydrofluoric acid. Densification of the porous Si layers through high temperature oxidation after erbium diffusion forms erbium-doped SiO2 layers.

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