Prospects for Infrared Electroluminescence From Porous Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
F. Koch ◽  
A. Kux
Keyword(s):  
Porous Silicon ◽  
Bound States ◽  
Electrical Current ◽  
Infrared Light ◽  
Electrical Excitation ◽  
Porous Si ◽  
3 Dimensional ◽  
Spectral Bands ◽  
Visible Luminescence ◽  
Wide Gap

AbstractEfficient visible luminescence from porous Si requires the 3-dimensional confinement of charges in structures with typical ∼3nm size. Such microporously etched Si acts as an intrinsic wide-gap material and is highly resistive. The material does not have the good transport properties consistent with an efficient electrical excitation. We instead suggest to employ mesoporously etched, p+-type Si with its better conductivity in electroluminescence application. The material luminesces in two spectral bands centered about 0.8eV and 1.0eV in the infrared. Both emissions originate from surface-bound states. We report on the temperature dependence of luminescence, on transport and first attempts to generate infrared light by the injection of electrical current.

Visible Luminescence from Porous Silicon and Siloxene: Recent Results

1992 ◽  
Vol 283 ◽  
Author(s):  
H. D. Fuchs ◽  
M. Rosenbauer ◽  
M. S. Brandt ◽  
S. Ernst ◽  
S. Finkbeiner ◽  
...  
Keyword(s):  
Optical Properties ◽  
Magnetic Resonance ◽  
Porous Silicon ◽  
Time Dependent ◽  
Photoluminescence Excitation ◽  
Porous Si ◽  
Green Luminescence ◽  
Visible Luminescence ◽  
Optically Detected ◽  
Insight Into

ABSTRACTThe optical properties of porous Si (p-Si) are compared to those of siloxene and its derivatives in order to gain more insight into the mechanism of the luminescence observed in p-Si. We report new results of photoluminescence (PL), photoluminescence excitation (PLE), time-dependent and pressure-dependent photoluminescence, and optically detected magnetic resonance (ODMR). Important information about the structural, electronic, and microscopic nature of the two classes of materials are deduced from these experiments. Annealed siloxene and p-Si show very similar properties, suggesting that siloxene-related structures, e.g. electrically isolated Si6-rings, might be responsible for the luminescence in p-Si. The Si-planes in as-prepared siloxene, with their green luminescence, are metastable and are readily oxidized into red-luminescent siloxene configurations.

Structural Characterization of Porous Silicon Fabricated by Electrochemical and Chemical Dissolution of Si Wafers

1991 ◽  
Vol 256 ◽  
Author(s):  
S. Miyazaki ◽  
T. Yasaka ◽  
K. Okamoto ◽  
K. Shiba ◽  
K. Sakamoto ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Electron Beam Irradiation ◽  
Complete Recovery ◽  
Porous Si ◽  
Beam Irradiation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Disordered Structure ◽  
Visible Luminescence

ABSTRACTThe structure of porous silicon exhibiting efficient visible photoluminescence has been characterized by using Fourier transformed infrared absorption, Raman scattering and x-ray diffraction. It is shown that the lattice spacing in the porous Si layer expands by about 0.3% in the direction perpendicular to the surface and also a partially disordered structure is existing. Electron beam irradiation causes desorption of hydrogen and fluorine bonds which terminate the surface, resulting in the quenching of the visible luminescence. The chemical etching of such layer has led to complete recovery of the luminescence intensity as well as the hydrogen and fluorine bonds termination.

Photoluminescence Properties of Er-Doped Porous Silicon

1995 ◽  
Vol 405 ◽  
Author(s):  
U. Hömmerich ◽  
X. Wu ◽  
F. Namavar ◽  
A. M. Cremins-Costa ◽  
K. L. Bray
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Power Dependence ◽  
Photoluminescence Properties ◽  
Porous Si ◽  
Temperature Quenching ◽  
Photoluminescence Study ◽  
Visible Luminescence ◽  
Excitation Mechanisms ◽  
Er Doped

AbstractWe present a photoluminescence study of erbium implanted into porous silicon (Er:PSi) with two different Si porosities, a) Er:PSi with a purple appearance and b) with a green-yellow appearance. Er was implanted with a dose of 1×1015 Er/cm2 at 380 keV and annealed at 650°C for 30 minutes. Room-temperature 1.54μm Er3+ emission was observed from both samples. The emission from purple Er:PSi was four times stronger than that from green-yellow Er:PSi. In contrast, visible luminescence from green-yellow Er:PSi was found to be stronger than that from purple Er:PSi. Temperature quenching and power dependence was investigated to elucidate the excitation mechanisms of Er3+ in porous silicon. The results support a correlation between nanostructures of porous Si and 1.54 μm Er3+ luminescence.

Intense Visible Luminescence from Thermally-Oxidized Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
S. Miyazakj ◽  
K. Shiba ◽  
K. Sakamoto ◽  
M. Hirose
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Excitation Power ◽  
Thermally Grown Oxide ◽  
Localized States ◽  
Porous Si ◽  
Time Resolved ◽  
Visible Luminescence ◽  
Oxidized Porous Silicon ◽  
The Ideal

ABSTRACTPhotoluminescence from porous silicon oxidized at 800 or 900°C in an N2 +O2 gas mixture has been investigated. The ideal passivation of the porous Si surface with thermally grown oxide results in stable, intense visible-light emission. The steady-state and time-resolved luminescence measured as functions of temperature and excitation power have indicated that a possible pathway for the light emission is the radiative recombination through localized states.

scholarly journals Ruthenium(ii) complex-photosensitized multifunctionalized porous silicon nanoparticles for two-photon near-infrared light responsive imaging and photodynamic cancer therapy

2016 ◽  
Vol 4 (7) ◽  
pp. 1337-1342 ◽  
Author(s):  
Nikola Ž. Knežević ◽  
Vanja Stojanovic ◽  
Arnaud Chaix ◽  
Elise Bouffard ◽  
Khaled El Cheikh ◽  
...  
Keyword(s):  
Photodynamic Therapy ◽  
Porous Silicon ◽  
Cancer Therapy ◽  
Silicon Nanoparticles ◽  
Near Infrared ◽  
Infrared Light ◽  
Porous Si ◽  
Near Infrared Light ◽  
Two Photon ◽  
Photodynamic Cancer Therapy

Multifunctionalized porous Si NPs and their application in NIR photodynamic therapy and imaging of cancer are reported.

Enhancement of efficiency in graphene/porous silicon solar cells by co-doping graphene with gold nanoparticles and bis(trifluoromethanesulfonyl)-amide

2017 ◽  
Vol 5 (35) ◽  
pp. 9005-9011 ◽  
Author(s):  
Ju Hwan Kim ◽  
Dong Hee Shin ◽  
Ha Seung Lee ◽  
Chan Wook Jang ◽  
Jong Min Kim ◽  
...  
Keyword(s):  
Gold Nanoparticles ◽  
Solar Cells ◽  
Porous Silicon ◽  
Au Nanoparticles ◽  
Silicon Solar Cells ◽  
Porous Si ◽  
Co Doping ◽  
Si Solar Cells ◽  
First Time

The co-doping of graphene with Au nanoparticles and bis(trifluoromethanesulfonyl)-amide is employed for the first time to enhance the performance of graphene/porous Si solar cells.

Visible Electro- and Photoluminescence from Porous Silicon and its Related Optoelectronic Properties

1991 ◽  
Vol 256 ◽  
Author(s):  
Nobuyoshi Koshida ◽  
Hideki Koyama
Keyword(s):  
Porous Silicon ◽  
Optical Absorption ◽  
Size Effect ◽  
Band Gap ◽  
Visible Region ◽  
Optoelectronic Properties ◽  
Porous Si ◽  
Quantum Size ◽  
Effect Model ◽  
Injection Type

ABSTRACTThe optoelectronic properties of porous Si (PS) are presented in terms of electroluminescence (EL), photoluminescence (PL), photoconduction (PC), and optical absorption. Observations of injection-type EL, efficient PL, band-gap widening, and photosensitivities In the visible region are consistent with the quantum size effect model in PS.

scholarly journals Morphology and FT IR spectra of porous silicon

2017 ◽  
Vol 68 (7) ◽  
pp. 53-57 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Jan Gregus ◽  
Emil Pincik
Keyword(s):  
Porous Silicon ◽  
Ir Spectra ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Layer Formation ◽  
Porous Si ◽  
Ft Ir ◽  
P Type ◽  
Type Sample ◽  
Ftir Investigation

AbstractThe morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiOxHycomplexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiOxHyand SiFxHycomplexes in the layer.

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