Effects of Growth Parameters on the Epitaxy of CoSi2/Si(100) Formed by Reactive Deposition Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
André Vantommela ◽  
Stefan Degroote ◽  
Johan Dekoster ◽  
Hugo Bender ◽  
Guido Langouche
Keyword(s):  
Growth Parameters ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Reactive Deposition ◽  
Transmission Electron ◽  
Highly Strained ◽  
Substrate Temperatures ◽  
Minimum Yield

AbstractEpitaxial CoSi2(100) layers in the thickness range of 20 to 50 nm have been formed by reactive deposition epitaxy (i.e. Co deposition onto a hot Si substrate) without the use of either a template or an intermediate Ti layer. It is explained how growth parameters such as the deposition rate and substrate temperature are crucial in determining the epitaxial nature of the silicide. According to this model, good CoSi2/Si(100) alignment is only achieved when very low deposition rates are used (0.1 Å/s or less), combined with relatively high substrate temperatures during deposition (∼ 600°C or higher). Using these conditions, highly strained, continuous CoSi2 layers with a channeling minimum yield of χmin = 9% could be formed. Using higher rates and/or lower deposition temperatures, an increasing fraction of misoriented CoSi2 grains is presumed from backscattering/channeling and x-ray experiments, the nature of which is under investigation with plan view and cross sectional transmission electron microscopy.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

A STUDY OF ALUMINA THIN FILMS GROWN BY LOW PRESSURE MOCVD: XPS AND AES

2002 ◽  
Vol 16 (08) ◽  
pp. 1261-1267 ◽  
Author(s):  
M. P. SINGH ◽  
S. A. SHIVASHANKAR ◽  
T. SHRIPATHI
Keyword(s):  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Alumina Film ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Low Pressure Mocvd ◽  
Substrate Temperatures

We have studied the chemical composition of alumina ( Al 2 O 3) films grown on Si(100) at different substrate temperatures by metalorganic chemical vapor deposition (MOCVD) using aluminium acetylactonate { Al(acac) 3} as the precursor. We have found that the resulting films of Al 2 O 3 contain substantial amounts of carbon. X-ray photoelectron spectroscopy (XPS) was employed to study the chemical state of carbon present in such films. The XPS spectrum reveals that the carbon present in Al 2 O 3 film is graphitic in nature. Auger electron spectroscopy (AES) was employed to study the distribution of carbon in the Al 2 O 3 films. The AES depth profile reveals that carbon is present throughout the film. The AES study on Al 2 O 3 films corroborates the XPS findings. An investigation of the Al 2 O 3/ Si (100) interface was carried out using cross-sectional transmission electron microscopy (XTEM). The TEM study reveals textured growth of alumina film on Si(100), with very fine grains of alumina embedded in an amorphous carbon-containing matrix.

A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 357-364
Author(s):  
S. Peripolli ◽  
Marie France Beaufort ◽  
David Babonneau ◽  
Sophie Rousselet ◽  
P.F.P. Fichtner ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
Inert Gases ◽  
Extended Defects ◽  
Cross Sectional ◽  
Plan View ◽  
New Approach ◽  
X Ray ◽  
Implantation Temperature ◽  
X Ray Scattering ◽  
Transmission Electron

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

Structure of Carrot Defects in 4H-SiC Epilayers

2006 ◽  
Vol 527-529 ◽  
pp. 327-332 ◽  
Author(s):  
X. Zhang ◽  
Seo Young Ha ◽  
M. Benamara ◽  
Marek Skowronski ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
Basal Plane ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Force Microscopy ◽  
Carrier Recombination ◽  
Atomic Force ◽  
Transmission Electron ◽  
Homoepitaxial Layers ◽  
Koh Etching

Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional transmission x-ray topography, cross-sectional transmission electron microscopy, atomic force microscopy, and KOH etching. The carrot defects nucleate at the substrate/epilayer interface at the emergence points of threading screw dislocations propagating from the substrate. The typical defect consists of two stacking faults: one in the prismatic plane with second one in the basal plane. The faults are connected by a stair-rod dislocation with Burgers vector 1/n[10-10] with n>3 at the cross-over. The basal plane fault is of Frank-type. Carrot defects are electrically active as evidenced by contrast in EBIC images indicating enhanced carrier recombination rate. Presence of carrot defects in the p-i-n diodes results in higher pre-breakdown reverse leakage current and approximately 50% lower breakdown voltage compared to the nominal value.

scholarly journals Effect of Growth Temperature on Structural Quality of In-Rich InxAl1−xN Alloys on Si (111) Substrate by RF-MOMBE

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Chun Chen ◽  
Yue-Han Wu ◽  
Jr.-Sheng Tian ◽  
Tzu-Chun Yen ◽  
Pei-Yin Lin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ternary Alloys ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Relationship Of ◽  
Substrate Temperatures

In-rich InAlN films were grown directly on Si (111) substrate by RF-MOMBE without any buffer layer. InAlN films were grown at various substrate temperatures in the range of 460–540°C with TMIn/TMAl ~3.3. Structural properties of InAlN ternary alloys were investigated with X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). It is shown that the deposited In0.8AlM0.2N (0001) films can be in epitaxy with Si (111) substrate with orientation relationship of [2̅110]InAlN//[11̅0]Si. Also, the growth rate around ~0.25 μm/h almost remains constant for growth in the temperature range from 460 to 520°C. Cross-sectional TEM from InAlN grown on Si (111) at 460°C shows that the epitaxial film is in direct contact with Si without any interlayer.

Reactively sputtered WOxNy films

2000 ◽  
Vol 15 (11) ◽  
pp. 2437-2445 ◽  
Author(s):  
Y. G. Shen ◽  
Y. W. Mai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Lattice Parameter ◽  
Grain Structure ◽  
Ex Situ ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited

A combined investigation of stress relaxation in WOxNy thin films sputter deposited on silicon wafers in an Ar–N2–O2 gas mixture by in situ substrate curvature measurements and of structural properties by ex situ x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), electron energy loss spectroscopy, and transmission electron diffraction is reported. It was found that the W2N films deposited under oxygen-free conditions had a high compressive stress of 1.45 GPa. As the oxygen concentration was increased, the stress became smaller and reached almost zero for films near 10–15 at.% oxygen. These results can be understood in terms of the decrease in the lattice parameter caused by substituting nitrogen atoms with oxygen in the lattice sites and the development of an amorphous network in the WOxNy films as the incorporation of oxygen was increased. Plan view and cross-sectional TEM analyses showed that 150-nm-thick oxygen-free crystalline W2N films had a columnar microstructure with an average column width of 15–20 nm near the film surface, whereas oxygen imbedded in the films provided a finer grain structure. The effect of oxygen in stabilizing the W2N structure was also elucidated and explained on the basis of structural and thermodynamic stability.

Microstructures and electrical resistivities of the RuO2 electrode on SiO2/Si annealed in the oxygen ambient

1996 ◽  
Vol 11 (11) ◽  
pp. 2681-2684 ◽  
Author(s):  
Jeong Soo Lee ◽  
Hyun Ja Kwon ◽  
Young Woo Jeong ◽  
Hyun Ha Kim ◽  
Cha Yeon Kim
Keyword(s):  
Electron Microscopy ◽  
Annealing Temperature ◽  
Columnar Structure ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Transmission Electron ◽  
Electrical Resistivities

The electrical resistivity property of RuO2 thin films grown on the SiO2/Si substrate by reactive dc sputtering was examined in terms of microstructure using x-ray diffraction and cross-sectional transmission electron microscopy. As the samples were annealed in the oxygen ambient over the temperature range 300–700 °C, the resistivity decreased from 270 to 90 μΩcm with increasing annealing temperature. When heat treatment was performed below 500 °C, the strain which accumulated in the RuO2 layer during deposition was released without significant increase in grain size. It is thought that below 500 °C improvement in the crystallinity plays an important role in the variation of the resistivity. Although a considerable amount of growth of RuO2 grains was achieved, the columnar structure of the RuO2 layer in the as-deposited sample remained unchanged even after annealing at 700 °C. The resistivity improvement above 500 °C was driven mainly by the grain boundary annihilation.

Interactions in and Interfacial Structure of Annealed Co / a-Si3N4 Studied by Hrtem

1992 ◽  
Vol 284 ◽  
Author(s):  
Tai D. Nguyen ◽  
Tue Nguyen ◽  
Herbert L. Ho ◽  
Ronald Gronsky
Keyword(s):  
Nitride Layer ◽  
Interfacial Structure ◽  
Si Substrate ◽  
Rapid Thermal Anneal ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Vacuum Anneal ◽  
Lower Temperature ◽  
And Diffusion

ABSTRACTInteractions between Co and a-Si3N4 films during Rapid Thermal Anneal (RTA) in N2 and Ar ambients, and during vacuum anneal, have been studied using plan-view and cross-sectional Transmission Electron Microscopy (TEM). Annealing in the temperature range 600–1000°C reveals agglomeration of the 12.5 nm Co layer and partial exposure of the nitride layer to the surface. Morphological damage of the Co/Si3N4 interface, and diffusion of Co into the nitride layer and possibly to the Si substrate, were observed after high temperature anneals. Phases of Co and CoSi2 were identified from the plan-view electron diffaction patterns. The Co/Si3N4 interaction seems to occur at lower temperature when annealed in vacuum. The microstructures and morphology of the layers and interfaces are presented. The mechanism for the diffusion of Co into the nitride layer is proposed.

Metastable Ge-Sn Alloy Layers Prepared by Pulsed Laser Melting

1989 ◽  
Vol 157 ◽  
Author(s):  
I.T.H. Chang ◽  
B. Cantor ◽  
A.G. Cullis
Keyword(s):  
Equilibrium Phase ◽  
Pulsed Laser ◽  
Equilibrium Phase Diagram ◽  
Processing Conditions ◽  
Laser Melting ◽  
Cross Sectional ◽  
Plan View ◽  
Cubic Crystal ◽  
X Ray ◽  
Transmission Electron

ABSTRACTGe has a diamond cubic crystal structure (α) while Sn exists in both the diamond cubic (α) and body centred tetragonal (β) allotropic forms. The solid solubilities between Ge and Sn are very small according to the equilibrium phase diagram. This paper describes an investigation into the manufacture of metastable diamond cubic Ge-Sn alloy layers using pulsed laser melting of evaporated thin films . Cross-sectional and plan-view transmission electron microscopy have been used to characterise the microstructures of the Ge-Sn alloy layers, with alloy compositions determined by energy-dispersive X-ray microanalysis. The metastable diamond cubic Ge-Sn alloy microstructures are discussed in detail as a function of processing conditions.

Sign in / Sign up

Export Citation Format

Share Document