Metastable Ge-Sn Alloy Layers Prepared by Pulsed Laser Melting

1989 ◽  
Vol 157 ◽  
Author(s):  
I.T.H. Chang ◽  
B. Cantor ◽  
A.G. Cullis
Keyword(s):  
Equilibrium Phase ◽  
Pulsed Laser ◽  
Equilibrium Phase Diagram ◽  
Processing Conditions ◽  
Laser Melting ◽  
Cross Sectional ◽  
Plan View ◽  
Cubic Crystal ◽  
X Ray ◽  
Transmission Electron

ABSTRACTGe has a diamond cubic crystal structure (α) while Sn exists in both the diamond cubic (α) and body centred tetragonal (β) allotropic forms. The solid solubilities between Ge and Sn are very small according to the equilibrium phase diagram. This paper describes an investigation into the manufacture of metastable diamond cubic Ge-Sn alloy layers using pulsed laser melting of evaporated thin films . Cross-sectional and plan-view transmission electron microscopy have been used to characterise the microstructures of the Ge-Sn alloy layers, with alloy compositions determined by energy-dispersive X-ray microanalysis. The metastable diamond cubic Ge-Sn alloy microstructures are discussed in detail as a function of processing conditions.

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

Effects of Growth Parameters on the Epitaxy of CoSi2/Si(100) Formed by Reactive Deposition Epitaxy

1995 ◽  
Vol 402 ◽  
Author(s):  
André Vantommela ◽  
Stefan Degroote ◽  
Johan Dekoster ◽  
Hugo Bender ◽  
Guido Langouche
Keyword(s):  
Growth Parameters ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Reactive Deposition ◽  
Transmission Electron ◽  
Highly Strained ◽  
Substrate Temperatures ◽  
Minimum Yield

AbstractEpitaxial CoSi2(100) layers in the thickness range of 20 to 50 nm have been formed by reactive deposition epitaxy (i.e. Co deposition onto a hot Si substrate) without the use of either a template or an intermediate Ti layer. It is explained how growth parameters such as the deposition rate and substrate temperature are crucial in determining the epitaxial nature of the silicide. According to this model, good CoSi2/Si(100) alignment is only achieved when very low deposition rates are used (0.1 Å/s or less), combined with relatively high substrate temperatures during deposition (∼ 600°C or higher). Using these conditions, highly strained, continuous CoSi2 layers with a channeling minimum yield of χmin = 9% could be formed. Using higher rates and/or lower deposition temperatures, an increasing fraction of misoriented CoSi2 grains is presumed from backscattering/channeling and x-ray experiments, the nature of which is under investigation with plan view and cross sectional transmission electron microscopy.

The effect of target crystallography on the growth of Pb(Mg1/3Nb2/3)O3 thin films using pulsed laser deposition

1999 ◽  
Vol 14 (6) ◽  
pp. 2355-2358 ◽  
Author(s):  
M. H. Corbett ◽  
G. Catalan ◽  
R. M. Bowman ◽  
J. M. Gregg
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Lead Magnesium

Pulsed laser deposition has been used to make two sets of lead magnesium niobate thin films grown on single-crystal h100j MgO substrates. One set was fabricated using a perovskite-rich target while the other used a pyrochlore-rich target. It was found that the growth conditions required to produce almost 100% perovskite Pb(Mg1/3Nb2/3)O3 (PMN) films were largely independent of target crystallography. Films were characterized crystallographically using x-ray diffraction and plan view transmission electron microscopy, chemically using energy dispersive x-ray analysis, and electrically by fabricating a planar thin film capacitor structure and monitoring capacitance as a function of temperature. All characterization techniques indicated that perovskite PMN thin films had been successfully fabricated.

A New Approach to Study the Damage Induced by Inert Gases Implantation in Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 357-364
Author(s):  
S. Peripolli ◽  
Marie France Beaufort ◽  
David Babonneau ◽  
Sophie Rousselet ◽  
P.F.P. Fichtner ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
Inert Gases ◽  
Extended Defects ◽  
Cross Sectional ◽  
Plan View ◽  
New Approach ◽  
X Ray ◽  
Implantation Temperature ◽  
X Ray Scattering ◽  
Transmission Electron

In the present work, we report on the effects of the implantation temperature on the formation of bubbles and extended defects in Ne+-implanted Si(001) substrates. The implantations were performed at 50 keV to a fluence of 5x1016 cm-2, for distinct implantation temperatures within the 250°C≤Ti≤800°C interval. The samples are investigated using a combination of cross-sectional and plan-view Transmission Electron Microscopy (TEM) observations and Grazing Incidence Small-Angle X-ray Scattering (GISAXS)measurements. In comparison with similar He implants, we demonstrate that the Ne implants can lead to the formation of a much denser bubble system.

Heteroepitaxial growth of TaN on MgO(001) and TiN(001)/Si(001) by pulsed laser deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
H. Y. Cheung ◽  
K.H. Wong
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural Quality ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Diffraction Profile ◽  
X Ray

ABSTRACTEpitaxial TaN(001) films have been successfully grown on MgO(001) single crystal and TiN(001) buffered Si(001) substrates by pulsed laser deposition method. Crystalline TaN layers of about 100 nm thick were deposited under a base pressure of 5 × 10−6 Torr and at substrate temperatures ranging from 500°C to 700°C. X-ray diffraction results suggested that stoichiometric TaN films with cube-on-cube <001>TaN∥<001>MgO heteroepitaxy are obtained in this temperature range. Plan-view and cross-sectional electron microscopy analysis revealed excellent structural quality and sharp interface boundary. TaN films grown on TiN(001) buffered Si(001), however, showed a mixture of TaNx (with x ≤ 1) components. Although the (001)-orientated TaN is always present prominently, the nitrogen deficient TaNx components are often co-existed in the films and show up as a broad peak in the X-ray diffraction profile. Stoichiometric and single phase TaN(001) films can only be obtained in a narrow temperature window at around 550oC and heteroepitaxial relation <001>TaN∥<001>TiN∥<001>Si has been demonstrated.

Structure of Carrot Defects in 4H-SiC Epilayers

2006 ◽  
Vol 527-529 ◽  
pp. 327-332 ◽  
Author(s):  
X. Zhang ◽  
Seo Young Ha ◽  
M. Benamara ◽  
Marek Skowronski ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
Basal Plane ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Force Microscopy ◽  
Carrier Recombination ◽  
Atomic Force ◽  
Transmission Electron ◽  
Homoepitaxial Layers ◽  
Koh Etching

Structure of the “carrot” defects in 4H-SiC homoepitaxial layers deposited by CVD has been investigated by plan-view and cross-sectional transmission x-ray topography, cross-sectional transmission electron microscopy, atomic force microscopy, and KOH etching. The carrot defects nucleate at the substrate/epilayer interface at the emergence points of threading screw dislocations propagating from the substrate. The typical defect consists of two stacking faults: one in the prismatic plane with second one in the basal plane. The faults are connected by a stair-rod dislocation with Burgers vector 1/n[10-10] with n>3 at the cross-over. The basal plane fault is of Frank-type. Carrot defects are electrically active as evidenced by contrast in EBIC images indicating enhanced carrier recombination rate. Presence of carrot defects in the p-i-n diodes results in higher pre-breakdown reverse leakage current and approximately 50% lower breakdown voltage compared to the nominal value.

Tem Investigation of Growth Temperature Dependence in Pulsed-Laser Ablated PLZT Films for Pyroelectric Applications

1999 ◽  
Vol 596 ◽  
Author(s):  
R. N. Jacobs ◽  
R. P. Godfrey ◽  
W. L. Sarney ◽  
C. W. Tipton ◽  
L. Salamanca-Riba
Keyword(s):  
Growth Temperature ◽  
Deposition Temperature ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Domain Orientation ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron microscopy is used to examine the structural characteristics of Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) films grown directly on single crystal LaAlO3 (LAO) substrates. In particular, the domain orientation and film epitaxial quality as a function of substrate deposition temperature are obtained in the range 500–650°C and compared to x-ray diffraction results. High-resolution cross sectional images and electron diffraction patterns confirm that domain orientation and overall epitaxial quality can be optimized with growth temperature. In addition, these results show a direct correlation with pyroelectric measurements obtained for capacitor structures incorporating La1−xSrxCoO3 (LSCO) top and bottom electrodes.

Epitaxial stabilization of orthorhombic cuprous oxide films on MgO(110)

2001 ◽  
Vol 16 (4) ◽  
pp. 914-921 ◽  
Author(s):  
Paul R. Markworth ◽  
R. P. H. Chang ◽  
Y. Sun ◽  
G. K. Wong ◽  
J. B. Ketterson
Keyword(s):  
Crystal Structure ◽  
Electron Microscopy ◽  
Cuprous Oxide ◽  
Equilibrium Phase ◽  
Metal Films ◽  
Epitaxial Films ◽  
X Ray Diffraction ◽  
Cubic Crystal ◽  
X Ray ◽  
Transmission Electron

Continuous epitaxial films of cuprous oxide (Cu2O) have been formed by the thermal oxidation of 1.5-μm-thick Cu metal films deposited on MgO(110) substrates. These films melted at 1118 °C in air, in agreement with equilibrium phase diagrams. Upon cooling from the liquid, a highly crystalline, epitaxial, 2.5-μm-thick Cu2O film was formed. X-ray diffraction spectroscopy revealed that the Cu2O film crystal structure was orthorhombically distorted from the bulk cubic crystal structure. High-resolution transmission electron microscopy showed that the film is coherent, and energy dispersive x-ray spectroscopy showed that interdiffusion is limited to the interface. These results suggest that a new epitaxially stabilized phase of Cu2O has been formed.

Growth of Epitaxial Cu/TiN/6H-SiC(0001) Heterostructures by Pulsed Laser Deposition

1999 ◽  
Vol 580 ◽  
Author(s):  
A. Kvit ◽  
A.K. Sharma ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Transmission Electron Micrograph ◽  
X Ray Diffraction ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron

AbstractEpitaxial Cu/TiN heterostructures were grown on hexagonal (6H)-SiC(0001) substrate by pulsed laser deposition using the domain epitaxy, where integral multiple of lattice constant or major planes match across the interface1. Such layers are needed for metallization of SiC bond integrated circuit devices. These Cu and TiN layers on SiC(0001) were grown at 600 degrees centigrade in a high vacuum (<10−6 Torr). This structure was characterized using X-ray diffraction technique and transmission electron microscopy. The X-ray diffraction recorded only (111) and (222) reflection of Cu and TiN. The full-width at half maximum of ω-rocking curve of (111) reflection of Cu (0.4 degree) and TEM results indicated a high epitaxial quality. The plan view transmission electron micrograph shows that Cu forms three-dimensional islands indicating that the Cu/TiN interface energy is very high. The island size varies from 0.2 to 2 μm. Analysis of selective aperture diffraction patterns and cross-sectional transmission electron microscopy, including high-resolution imaging, showed relationships Cu(111)//TiN(111)//6H-SiC(0001). The TiN/SiC an interface was locally atomically sharp and free from secondary phases or obvious interdiffusion. The typical defects in the TiN(111) layers consisted of threading domain boundaries. The mechanism of three-dimension growth of copper on TiN layers was discussed.

Reactively sputtered WOxNy films

2000 ◽  
Vol 15 (11) ◽  
pp. 2437-2445 ◽  
Author(s):  
Y. G. Shen ◽  
Y. W. Mai
Keyword(s):  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Lattice Parameter ◽  
Grain Structure ◽  
Ex Situ ◽  
Cross Sectional ◽  
Plan View ◽  
X Ray ◽  
Transmission Electron ◽  
Sputter Deposited

A combined investigation of stress relaxation in WOxNy thin films sputter deposited on silicon wafers in an Ar–N2–O2 gas mixture by in situ substrate curvature measurements and of structural properties by ex situ x-ray diffraction, x-ray photoelectron spectroscopy, transmission electron microscopy (TEM), electron energy loss spectroscopy, and transmission electron diffraction is reported. It was found that the W2N films deposited under oxygen-free conditions had a high compressive stress of 1.45 GPa. As the oxygen concentration was increased, the stress became smaller and reached almost zero for films near 10–15 at.% oxygen. These results can be understood in terms of the decrease in the lattice parameter caused by substituting nitrogen atoms with oxygen in the lattice sites and the development of an amorphous network in the WOxNy films as the incorporation of oxygen was increased. Plan view and cross-sectional TEM analyses showed that 150-nm-thick oxygen-free crystalline W2N films had a columnar microstructure with an average column width of 15–20 nm near the film surface, whereas oxygen imbedded in the films provided a finer grain structure. The effect of oxygen in stabilizing the W2N structure was also elucidated and explained on the basis of structural and thermodynamic stability.

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