scholarly journals Effect of Growth Temperature on Structural Quality of In-Rich InxAl1−xN Alloys on Si (111) Substrate by RF-MOMBE

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Chun Chen ◽  
Yue-Han Wu ◽  
Jr.-Sheng Tian ◽  
Tzu-Chun Yen ◽  
Pei-Yin Lin ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ternary Alloys ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Relationship Of ◽  
Substrate Temperatures

In-rich InAlN films were grown directly on Si (111) substrate by RF-MOMBE without any buffer layer. InAlN films were grown at various substrate temperatures in the range of 460–540°C with TMIn/TMAl ~3.3. Structural properties of InAlN ternary alloys were investigated with X-ray diffraction, scanning electron microscopy, and transmission electron microscopy (TEM). It is shown that the deposited In0.8AlM0.2N (0001) films can be in epitaxy with Si (111) substrate with orientation relationship of [2̅110]InAlN//[11̅0]Si. Also, the growth rate around ~0.25 μm/h almost remains constant for growth in the temperature range from 460 to 520°C. Cross-sectional TEM from InAlN grown on Si (111) at 460°C shows that the epitaxial film is in direct contact with Si without any interlayer.

Study of the structural quality of heteroepitaxial silicon-on-sapphire structures by high-resolution X-ray diffraction, X-ray reflectivity, and electron microscopy

2014 ◽  
Vol 59 (3) ◽  
pp. 315-322 ◽  
Author(s):  
A. E. Blagov ◽  
A. L. Vasiliev ◽  
A. S. Golubeva ◽  
I. A. Ivanov ◽  
O. A. Kondratev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
High Resolution ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray

Cross-Sectional TEM Study Of Phase Separation In Reaction Of Ni-Ta Films With GaAs

1985 ◽  
Vol 54 ◽  
Author(s):  
A. Lahav ◽  
M. Eizenberg ◽  
Y. Komem
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Phase Separation ◽  
Gaas Substrate ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTThe reaction between Ni60Ta40 amorphous alloy and (001) GaAs was studied by cross-sectional transmission electron microscopy, Auger spectroscopy, and x-ray diffraction. At 400°C formation of Ni GaAs at the interface with GaAs was observed. After heat treatment at 600°C in vacuum a layered structure of TaAs/NiGa/GaAs has been formed. The NiGa layer has epitaxial relations to the GaAs substrate. The vertical phase separation can be explained by opposite diffusion directions of nickel and arsenic atoms.

INFLUENCE OF Al MONOLAYERS ON THE PROPERTIES OF AlN LAYERS ON Si (111)

2009 ◽  
Vol 16 (01) ◽  
pp. 99-103 ◽  
Author(s):  
L. S. CHUAH ◽  
Z. HASSAN ◽  
H. ABU HASSAN
Keyword(s):  
Buffer Layers ◽  
Structural Quality ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Surfaces ◽  
Gan On Si ◽  
Aln Buffer ◽  
Xrd Techniques ◽  
Substrate Temperatures

High-quality aluminum nitride ( AlN ) layers with full width at half maximum (FWHM) values of 11 arcmin were grown by plasma-assisted molecular-beam epitaxy on Si (111) substrates. AlN nucleation layers are being investigated for the growth of GaN on Si . Growth using AlN buffer layers leads to Al -polar films, with surfaces strongly dependent on the flux conditions used. Flat surfaces can be obtained by growing as Al -rich as possible, although Al droplets tend to form. Before starting the AlN growth, a few monolayers of Al are deposited on the substrate to avoid the formation of Si 3 N 4. X-ray diffraction (XRD) techniques were employed to determine the surface and structural quality of the layers. XRD revealed that monocrystalline AlN was obtained. Best AlN films were obtained at high substrate temperatures (875°C) and III/V ratios close to stoichiometry.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

scholarly journals Structural Characterization of Al0.37In0.63N/AlN/p-Si (111) Heterojunctions Grown by RF Sputtering for Solar Cell Applications

Materials ◽  
2021 ◽  
Vol 14 (9) ◽  
pp. 2236
Author(s):  
Arántzazu Núñez-Cascajero ◽  
Fernando B. Naranjo ◽  
María de la Mata ◽  
Sergio I. Molina
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Interfacial Layer ◽  
Rf Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aln Buffer

Compact Al0.37In0.63N layers were grown by radiofrequency sputtering on bare and 15 nm-thick AlN-buffered Si (111) substrates. The crystalline quality of the AlInN layers was studied by high-resolution X-ray diffraction measurements and transmission electron microscopy. Both techniques show an improvement of the structural properties when the AlInN layer is grown on a 15 nm-thick AlN buffer. The layer grown on bare silicon exhibits a thin amorphous interfacial layer between the substrate and the AlInN, which is not present in the layer grown on the AlN buffer layer. A reduction of the density of defects is also observed in the layer grown on the AlN buffer.

Optical properties of GaN with Ga and N polarity

2001 ◽  
Vol 693 ◽  
Author(s):  
M. A. Reshchikov ◽  
D. Huang ◽  
F. Yun ◽  
P. Visconti ◽  
T. King ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Radiative Efficiency ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
And Inversion

AbstractWe compared photoluminescence (PL) and cross-sectional transmission electron microscopy (TEM) characteristics of GaN samples with Ga and N polarities grown by molecular beam epitaxy (MBE) on sapphire substrates. Ga-polar films grown at low temperature typically have very smooth surfaces, which are extremely difficult to etch with acids or bases. In contrast, the N-polar films have rougher surfaces and can be easily etched in hot H3PO4 or KOH. The quality of the X-ray diffraction spectra is also much better in case of Ga-polar films. Surprisingly, PL efficiency is always much higher in the N-polar GaN, yet the features and shape of the PL spectra are comparable for both polarities. We concluded that, despite the excellent quality of the surface, MBE-grown Ga-polar GaN layers contain higher concentration of nonradiative defects. From the analyses of cross-sectional TEM investigations, we have found that Ga-polar films have high density of threading dislocations (5x109 cm-2) and low density of inversion domains (1x107 cm-2). For N-polar GaN the situation is the reverse: the density of dislocations and inversion domains are 5x108 and ~1x1011 cm-2, respectively. One of the important conclusions derived from the combined PL and TEM study is that inversion domains do not seem to affect the radiative efficiency very adversly, whereas dislocations reduce it significantly.

Solid-state reaction of Ru powder in molten AlxBi1−x

1990 ◽  
Vol 5 (4) ◽  
pp. 746-753 ◽  
Author(s):  
R. W. Johnson ◽  
C. M. Garland
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Alloy System ◽  
Reaction Cross ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Metal Solvent

We describe a low-temperature solid-state interdiffusion technique that allows reaction between spatially separated reacting species and its application in the Al–Ru alloy system. This technique uses a liquid-metal solvent (Bi) as a medium for the transfer of Al to the surface of Ru powder where reaction occurs with the formation of nanocrystalline AlxRu1−x product phases. X-ray diffraction measurements are used to follow the time and temperature dependence of the reaction. Cross-sectional transmission electron microscopy allows direct imaging of the growth and morphology of the AlxRu1−x product phases.

The Influence of Zirconia Substrate Temperature on the Microstructure and Adhesion of Deposited Mg Films

2012 ◽  
Vol 472-475 ◽  
pp. 2834-2838
Author(s):  
Fei Xiong Mao ◽  
Tao Liu ◽  
Shi Wei Liu ◽  
Jing Kun Yu
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Substrate Temperature ◽  
Hexagonal Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Adhesion Performance ◽  
Substrate Temperatures ◽  
Scanning Electron

Mg films were prepared by magnetron sputtering on zirconia substrate. The surface morphology, structure and adhesion performance were determined by scanning electron microscopy (SEM), X-ray diffraction (XRD) and automatic nano scratch tester, respectively. The results show that the Mg films deposited on the substrates at 50 °C, 200 °C, 300 °C are mainly of hexagonal phase with the crystal planes (002) in highly preferred orientation that is weaken with the substrate temperature increased. After annealed at 230 °C, the quality of thin film deposited on the substrate at 50 °C can be improved as crystallizability enhanced and grain size increased. The adhesion of Mg film increases firstly, and then decreases with increasing the substrate temperatures.

Pyrolytic and Laser Photolytic Growth of Crystalline and Amorphous Germanium Films from Digermane (Ge2H6)

1988 ◽  
Vol 131 ◽  
Author(s):  
Djula Eres ◽  
D. H. Lowndes ◽  
J. Z. Tischler ◽  
J. W. Sharp ◽  
D. B. Geohegan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Purity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Partial Pressures ◽  
193 Nm ◽  
Substrate Temperatures ◽  
Deposition Conditions

ABSTRACTHigh-purity digermane (Ge2H6, 5% in He) has been used to grow epitaxially oriented crystalline Ge films by pyrolysis. Amorphous Ge:H films also have been deposited by pyrolysis and ArF (193 nm) laser-induced photolysis. The amorphous-to-crystalline transition and the film's morphology was studied as a function of deposition conditions. The film's microstructure, strain and epitaxial quality were assessed using x-ray diffraction curves and scanning and transmission electron microscopy. It was found that commensurate, coherently strained epitaxial Ge films could be grown pyrolytically on (100) GaAs at low (0.05–40 m Torr) Ge2H6 partial pressures, for substrate temperatures above 380°C.

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