Laser–Assisted Mos/Sos Transistor Fabrication

1981 ◽  
Vol 4 ◽  
Author(s):  
L.D. Hess ◽  
S.A. Kokorowski ◽  
G.L. Olson ◽  
Y.M. Chi ◽  
A. Gupta ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Channel Length ◽  
Electrical Activation ◽  
Operating Voltage ◽  
Electrical Characteristics ◽  
Mos Transistors ◽  
Cw Laser ◽  
Conventional Furnace ◽  
Transistor Fabrication ◽  
Ion Implanted

ABSTRACTCW laser annealing techniques were incorporated into standard MOS/SOS transistor fabrication procedures and found to be advantageous as compared to conventional furnace methods for electrical activation of ion–implanted source/drain dopants for both N- and P–MOS transistors. Static electrical characteristics of 2.4 μm channel–length transistors are similar for both types of annealing, whereas the speed of devices with cw laser annealed source–drain regions is increased 10 to 40%, depending on the operating voltage.

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

CW Laser Annealing Of Ion-Implanted Silicon

1980 ◽  
Author(s):  
L. D. Hess ◽  
R. A. Forber ◽  
S. A. Kokorowski ◽  
G. L. Olson
Keyword(s):  
Laser Annealing ◽  
Cw Laser ◽  
Ion Implanted

Structural reordering and electrical activation of ion-implanted GaAs and InP due to laser annealing in a controlled atmosphere

1999 ◽  
Vol 59 (4) ◽  
pp. 2986-2994 ◽  
Author(s):  
G. Vitali ◽  
C. Pizzuto ◽  
G. Zollo ◽  
D. Karpuzov ◽  
M. Kalitzova ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Electrical Activation ◽  
Controlled Atmosphere ◽  
Ion Implanted

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

SiO2 antireflection coating effect on cw laser annealing of ion implanted Si

1980 ◽  
Vol 36 (3) ◽  
pp. 202-203 ◽  
Author(s):  
H. Okabayashi ◽  
M. Yoshida ◽  
K. Ishida ◽  
T. Yamane
Keyword(s):  
Laser Annealing ◽  
Antireflection Coating ◽  
Cw Laser ◽  
Ion Implanted

Implant dose profile dependence of electrical characteristics of ion‐implanted MOS transistors

1974 ◽  
Vol 45 (10) ◽  
pp. 4514-4519 ◽  
Author(s):  
Osamu Kudoh ◽  
Kunio Nakamura ◽  
Mototaka Kamoshida
Keyword(s):  
Electrical Characteristics ◽  
Mos Transistors ◽  
Dose Profile ◽  
Ion Implanted

Study of the Crystalline to Amorphous Silicon Boundary Following Laser Induced Solid Phase Epitaxy.

1981 ◽  
Vol 4 ◽  
Author(s):  
J. P. Gonchond ◽  
G. A. Rozgonyi ◽  
D. Bois
Keyword(s):  
Chemical Etching ◽  
Laser Annealing ◽  
Solid Phase ◽  
Electrical Activation ◽  
Solid Phase Epitaxy ◽  
Si Substrate ◽  
Implantation Damage ◽  
Cw Laser ◽  
Higher Power ◽  
Voltage Contrast

ABSTRACTEBIC and voltage contrast SEM microscopy, combined with optical microscopy. chemical etching and Talystep profiling have been used to investigate cw laser annealing of a-Si in the slip-free SPE regime. Special attention is devoted to the edges and extremities of the line scans, i.e. to the c-to a-Si boundary. At very low power, evidence is given for an initial reordering and thus electrical activation stage of the a-Si. For the higher power range regrowth occurs through two different processes. The EBIC yield is interpreted in terms of a balance between annealing of the ion implantation damage and defect generation in the si substrate during the laser annealing. These results are extended to the case of a scanned electron beam annealing.

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