Implant dose profile dependence of electrical characteristics of ion‐implanted MOS transistors

1974 ◽  
Vol 45 (10) ◽  
pp. 4514-4519 ◽  
Author(s):  
Osamu Kudoh ◽  
Kunio Nakamura ◽  
Mototaka Kamoshida
Keyword(s):  
Electrical Characteristics ◽  
Mos Transistors ◽  
Dose Profile ◽  
Ion Implanted

Laser–Assisted Mos/Sos Transistor Fabrication

1981 ◽  
Vol 4 ◽  
Author(s):  
L.D. Hess ◽  
S.A. Kokorowski ◽  
G.L. Olson ◽  
Y.M. Chi ◽  
A. Gupta ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Channel Length ◽  
Electrical Activation ◽  
Operating Voltage ◽  
Electrical Characteristics ◽  
Mos Transistors ◽  
Cw Laser ◽  
Conventional Furnace ◽  
Transistor Fabrication ◽  
Ion Implanted

ABSTRACTCW laser annealing techniques were incorporated into standard MOS/SOS transistor fabrication procedures and found to be advantageous as compared to conventional furnace methods for electrical activation of ion–implanted source/drain dopants for both N- and P–MOS transistors. Static electrical characteristics of 2.4 μm channel–length transistors are similar for both types of annealing, whereas the speed of devices with cw laser annealed source–drain regions is increased 10 to 40%, depending on the operating voltage.

Electrical characteristics of ion‐implanted p‐channel MOS transistors

1974 ◽  
Vol 45 (1) ◽  
pp. 334-340 ◽  
Author(s):  
Kunio Nakamura ◽  
Mototaka Kamoshida
Keyword(s):  
Electrical Characteristics ◽  
Mos Transistors ◽  
Ion Implanted

Electrical Characteristics of Al+ Ion-Implanted 4H-SiC

2002 ◽  
Vol 389-393 ◽  
pp. 803-806 ◽  
Author(s):  
Hideaki Tanaka ◽  
Satoshi Tanimoto ◽  
Mitsugu Yamanaka ◽  
Masakatsu Hoshi
Keyword(s):  
Electrical Characteristics ◽  
Ion Implanted
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