Optical Characterization of Chemically Vapor Deposited and Laser-Annealed Polysilicon

1981 ◽  
Vol 4 ◽  
Author(s):  
B. G. Bagley ◽  
D. E. Aspnes ◽  
G. K. Celler ◽  
A. C. Adams
Keyword(s):  
Optical Properties ◽  
Spectroscopic Ellipsometry ◽  
Silicon Surface ◽  
Optical Characterization ◽  
Effective Medium Approximation ◽  
Incident Power ◽  
Spot Diameter ◽  
Amorphous Component ◽  
Ion Laser

ABSTRACTThe optical properties of polysilicon on insulating SiO2 were measured by spectroscopic ellipsometry over the energy range 3.0 to 6.0 eV. Spectra were obtained for films as-deposited and after irradiation with an Ar ion laser (focused to a 50μm spot diameter) at 6.0, 7.0 or 7.5 watts. We observed monotonic changes in both ε1 and ε2 with increasing incident power even though the power density was high enough to completely melt the silicon surface in all cases. The changes observed are caused by changes in microstructure; with increasing power the amorphous component decreases and the density increases. Approximate values of the microstructural components are estimated by comparing measured spectra to those synthesized from constituent spectra in the Bruggeman effective medium approximation.

Optical characterization of hybrid PEDOT:PSS/Si heterostructures by spectroscopic ellipsometry

2021 ◽  
Vol 717 (1) ◽  
pp. 92-97
Author(s):  
O. S. Kondratenko ◽  
S. V. Mamykin ◽  
T. S. Lunko ◽  
I. B. Mamontova ◽  
V. R. Romanyuk
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Optical Characterization

Substitution Effect on 2-(Oxazolinyl)-phenols: Emission Color-Tunable, Minimalistic Excited-State Intramolecular Proton Transfer (ESIPT)-based Luminophores

2021 ◽  
Author(s):  
Dominik Göbel ◽  
Pascal Rusch ◽  
Daniel Duvinage ◽  
Tim Stauch ◽  
Nadja C. Bigall ◽  
...  
Keyword(s):  
Optical Properties ◽  
Excited State ◽  
Solid State ◽  
Substitution Effect ◽  
Optical Characterization ◽  
Intramolecular Proton Transfer ◽  
Substitution Pattern ◽  
Emission Color ◽  
Color Tunable

The synthesis and optical characterization of novel single-benzene ESIPT-based fluorophores is described in solid state and in solution. Special attention is given towards the influence of their unique substitution pattern on their optical properties. Depending on this pattern, aggregation induced emission or aggregation caused quenching (ACQ) is observed in the solid state.<br>

Optical properties of silicene-dielectric interfaces from IR to far UV

2021 ◽  
pp. 2150235
Author(s):  
Yujun Hou ◽  
Chun Jiang
Keyword(s):  
Optical Properties ◽  
Single Layer ◽  
Normal Incidence ◽  
Complex Surface ◽  
Optical Characterization ◽  
Potential Candidate ◽  
Dielectric Interfaces ◽  
Uv Absorbers ◽  
Uv Range

Since the growth of single layer of Si has emerged, silicene became a potential candidate material to make up the disadvantage of graphene. In this paper, the complex surface conductivity is applied to characterize the properties of silicene and we investigate the optical characterization of silicene-dielectric interfaces from IR to far UV range. The silicene-Si and silicene-Ge interfaces along both parallel and perpendicular polarization directions of electromagnetic field with normal incidence are considered in this work. The optical properties of the silicene-dielectric systems proposed in this paper lay a foundation for the performance of complex silicene-based optoelectronic devices such as sensors, detectors, filters, UV absorbers and so on.

Optical Characterization of Varnish Films by Spectroscopic Ellipsometry for Application in Artwork Conservation

2005 ◽  
Vol 59 (1) ◽  
pp. 94-99 ◽  
Author(s):  
Kyriaki Polikreti ◽  
Andreas Othonos ◽  
Constantinos Christofides
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Optical Characterization

Optical characterization of CuIn1−xGaxSe2 alloy thin films by spectroscopic ellipsometry

2003 ◽  
Vol 94 (2) ◽  
pp. 879-888 ◽  
Author(s):  
P. D. Paulson ◽  
R. W. Birkmire ◽  
W. N. Shafarman
Keyword(s):  
Thin Films ◽  
Spectroscopic Ellipsometry ◽  
Optical Characterization

Analysis of High Dose Implanted Silicon by High Depth Resolution Rbs and Spectroscopic Ellipsometry and TEM

1984 ◽  
Vol 35 ◽  
Author(s):  
T. Lohner ◽  
G. Mezey ◽  
M. Fried ◽  
L. GhiţA ◽  
C. Ghiţa ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Spectroscopic Ellipsometry ◽  
Composite Structures ◽  
Depth Resolution ◽  
High Dose ◽  
Detailed Characterization ◽  
High Depth ◽  
Qualitative Picture

ABSTRACTOne of the applications of high dose ion implantation is to form surface alloys or compound layers. The detailed characterization of such composite structures is of great importance. This paper tries to answer the question: how can we outline, at least, a qualitative picture from the optical properties measured by ellipsometry of high dose Al and Sb implanted silicon. Attempts are done to separate the effect of implanted impurities from the dominant disorder contribution to the measured optical properties. As the ellipsometry does not provide information enough to decide the applicability of optical models therefore methods sensitive to the structure (channeling and TEM) were applied too.

Optical characterization of SnO2:F films by spectroscopic ellipsometry

2010 ◽  
Vol 356 (41-42) ◽  
pp. 2192-2197 ◽  
Author(s):  
F. Atay ◽  
V. Bilgin ◽  
I. Akyuz ◽  
E. Ketenci ◽  
S. Kose
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Optical Characterization
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