Pulsed Laser Annealing of Al, Ni, and MgO Containing Nickel Precipitates

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Thermal Stresses ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Dislocation Loops ◽  
Vacancy Loops ◽  
Pulsed Laser Annealing ◽  
Melting Threshold

ABSTRACTWe have investigated the generation of point defects and dislocations, and the formation of dislocation loops as a function of pulse energy density in laser annealed Al, Ni, and MgO containing nickel precipitates. In the case of Al where vacancies are mobile above 200 K, mostly vacancy loops were observed at room temperature in laser melted layers. Dislocations are formed below the laser-melted layers as well as in specimens treated with pulses below the melting threshold, due to thermal stresses. In the case of Ni (where vacancies are mobile above 373 K) the microstructure in room temperature laser annealed specimens consists of primarily dislocations and their tangles. In MgO:Ni crystals, enough laser energy was absorbed to melt nickel precipitates. The dislocation structure around the precipitates and the transformation of nickel precipitates from coherent into incoherent, provided information on melting and crystal growth of these precipitates.

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

Preferential Crystallization of β-FeSi2 from Micro-droplets Generated by Laser Ablation.

2004 ◽  
Vol 848 ◽  
Author(s):  
Aiko Narazaki ◽  
Tadatake Sato ◽  
Yoshizo Kawaguchi ◽  
Hiroyuki Niino
Keyword(s):  
Laser Ablation ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Excimer Laser Ablation ◽  
Pulsed Laser Annealing ◽  
Molten Droplets ◽  
Equilibrium Process ◽  
Krf Excimer Laser

ABSTRACTβ-FeSi2 was successfully fabricated at room temperature via the deposition of molten micro-droplets generated by the KrF excimer laser ablation. Only the molten droplets precipitated as the β-FeSi2 crystalline phase on a silicon substrate kept even at room temperature, whereas the rest of film was amorphous. The crystallization behavior of micro-droplets has been discussed in the light of non-equilibrium process due to rapid cooling on the substrate. After the deposition, pulsed laser annealing was also performed in order to improve the crystallinity of the β-FeSi2 microprecipitates-containing film.

Formation of Q-carbon by adjusting sp3 content in diamond-like carbon films and laser energy density of pulsed laser annealing

Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 504-511 ◽  
Author(s):  
Hiroki Yoshinaka ◽  
Seiko Inubushi ◽  
Takanori Wakita ◽  
Takayoshi Yokoya ◽  
Yuji Muraoka
Keyword(s):  
Energy Density ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Energy Density ◽  
Diamond Like Carbon ◽  
Pulsed Laser Annealing

Pulsed-Laser Annealing of Silicon Films

1992 ◽  
Vol 283 ◽  
Author(s):  
T. Sameshima
Keyword(s):  
Laser Annealing ◽  
Defect Density ◽  
Laser Energy ◽  
Hydrogen Plasma ◽  
Silicon Films ◽  
Large Defect ◽  
Pulsed Laser Annealing ◽  
High Carrier Mobility ◽  
Melting Threshold ◽  
Amorphous States

ABSTRACTPhase transition between crystalline and amorphous states was studied through 30ns-pulsed XeCl laser induced melting of silicon films. Crystallization occurs through interface controlled growth for laser energy above surface melting threshold. Grain size is smaller than lOOnm because of short melt duration (<80ns). Amorphization is observed in silicon films thinner than 40nm when the silicon films are completely melted then solidified homogeneously. The amorphized films have a large defect density (∼1020cm-3eV-1), which is remarkably reduced by hydrogen plasma treatment for 1 minute. This paper also discusses the application to fabrication of thin film transistors with a high carrier mobility (>100cm2/Vs) at a low temperature of 250°C.

An Ion-Scattering Study of Oxygen Indiffusion During Pulsed Laser Annealing/Cleaning of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J.F.M. Westendorp ◽  
Z.L. Wang ◽  
F.W. Saris
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Single Pulse ◽  
Solubility Limit ◽  
Dissolution Time ◽  
Ion Scattering ◽  
Solid Solubility Limit ◽  
Pulsed Laser Annealing ◽  
Scattering Study

ABSTRACTOxygen indiffusion during pulsed laser annealing of silicon has been studied using the 186 O(α,α) 186 O resonance at 3.045 MeV. Anneals were carried out with a Q–switched ruby laser, energy density of the pulses 1.5 J/cm2 , pulse width 20 ns. No evidence for oxygen indiffusion was found, neither for ion–implanted single pulse air–annealed silicon nor for a silicon wafer, cleaned with 8 laser shots in a UHV environment. In the latter case, the upper limit of the oxygen concentration was found to be 3.1 * 1018 at/cm3 , which is lower than the solid solubility limit of oxygen in silicon. The non–occurrence of indiffusion is consistent with the dissolution time of SiO2 in Si, which is orders of magnitude longer than the melt duration of the Si–substrate.

Thermally-Assisted Pulsed-Laser Annealing of SOS

1980 ◽  
Vol 1 ◽  
Author(s):  
Masayoshi Yamada ◽  
Ken-Ichi Yamazaki ◽  
Hisakazu Kotani ◽  
Keiichi Yamamoto ◽  
Kenji Abe
Keyword(s):  
Residual Strain ◽  
Room Temperature ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Raman Shift ◽  
Crystal Silicon ◽  
Depolarization Factor ◽  
Pulsed Laser Annealing ◽  
Residual Strains

ABSTRACTThermally-assisted pulsed-laser annealing has been performed on ion-implanted silicon-on-sapphire(SOS) by irradiating Q-switched(20 nsec) ruby laser light during thermally heating. Raman scattering measurements have been made to estimate the residual strain of the annealed SOS. It was observed that Raman shift of SOS annealed in the temperature range of 400°C to 500°C was very close to that of single crystal silicon and the depolarization factor(the Raman intensity ratio of allowed z(xy)z to forbidden z(xx)z scattering configuration) was infinite, while Raman shift of SOS annealed at room temperature was shifted down to about 5 cm-1 and the depolarization factor was finite. It was found that the residual strain of SOS was relieved by the thermally-assisted pulsed-laser annealing, but the residual strain of SOS annealed at room temperature was inhomogeneous and attained to 7×10−3. The annealing temperature dependences of the residual strains were not explained well with a strictly thermal melting and recrystallization model in conjunction with the thermal expansion difference between silicon and sapphire, and suggested to need a new model.

Surface and Subsurface Morphology of Laser Bean Annealed Auge/Gaaa Ohmic Contacts

1981 ◽  
Vol 4 ◽  
Author(s):  
O. Aina ◽  
J. Norton ◽  
W. Katz ◽  
G. Smith ◽  
K. Rose
Keyword(s):  
Nd:Yag Laser ◽  
Laser Heating ◽  
Ohmic Contacts ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Surface Damage ◽  
Pulsed Laser Annealing ◽  
Heating Model

ABSTRACTA study of the pulsed laser annealing of AuGe films on GaAs using a Nd:YAG laser has revealed differences between the surface and subsurface morfhologies. At laser energy densities lower than 1.1 J/cm2 , the surface retained the smooth, “golden” appearance of deposited AuGe films, while evidence of damage was observed below the surface. At higher energy densities, surface damage was observed. SIMS profiles of Ga and As in the AuGe layer and a laser heating model have been used to explain the presence or absence of damage in terms of the outdiffusion of As and Ga through the laser created melt which leads to the presence or absence of Ga and As at the surface and below the surface.

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing
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