Pulsed-Laser Annealing of Silicon Films

1992 ◽  
Vol 283 ◽  
Author(s):  
T. Sameshima
Keyword(s):  
Laser Annealing ◽  
Defect Density ◽  
Laser Energy ◽  
Hydrogen Plasma ◽  
Silicon Films ◽  
Large Defect ◽  
Pulsed Laser Annealing ◽  
High Carrier Mobility ◽  
Melting Threshold ◽  
Amorphous States

ABSTRACTPhase transition between crystalline and amorphous states was studied through 30ns-pulsed XeCl laser induced melting of silicon films. Crystallization occurs through interface controlled growth for laser energy above surface melting threshold. Grain size is smaller than lOOnm because of short melt duration (<80ns). Amorphization is observed in silicon films thinner than 40nm when the silicon films are completely melted then solidified homogeneously. The amorphized films have a large defect density (∼1020cm-3eV-1), which is remarkably reduced by hydrogen plasma treatment for 1 minute. This paper also discusses the application to fabrication of thin film transistors with a high carrier mobility (>100cm2/Vs) at a low temperature of 250°C.

Pulsed Laser Annealing of Al, Ni, and MgO Containing Nickel Precipitates

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Thermal Stresses ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Dislocation Loops ◽  
Vacancy Loops ◽  
Pulsed Laser Annealing ◽  
Melting Threshold

ABSTRACTWe have investigated the generation of point defects and dislocations, and the formation of dislocation loops as a function of pulse energy density in laser annealed Al, Ni, and MgO containing nickel precipitates. In the case of Al where vacancies are mobile above 200 K, mostly vacancy loops were observed at room temperature in laser melted layers. Dislocations are formed below the laser-melted layers as well as in specimens treated with pulses below the melting threshold, due to thermal stresses. In the case of Ni (where vacancies are mobile above 373 K) the microstructure in room temperature laser annealed specimens consists of primarily dislocations and their tangles. In MgO:Ni crystals, enough laser energy was absorbed to melt nickel precipitates. The dislocation structure around the precipitates and the transformation of nickel precipitates from coherent into incoherent, provided information on melting and crystal growth of these precipitates.

Photoluminescence of Pulsed Ruby Laser Annealed Crystalline and Ion Implanted GaAs

1981 ◽  
Vol 4 ◽  
Author(s):  
Douglas H. Lowndes ◽  
Bernard J. Feldman
Keyword(s):  
Radiative Recombination ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
High Dose ◽  
Pulsed Laser Annealing ◽  
Recombination Centers ◽  
Pl Intensity ◽  
P Type ◽  
Ion Implanted

ABSTRACTIn an effort to understand the origin of defects earlier found to be present in p–n junctions formed by pulsed laser annealing (PLA) of ion implanted (II) semiconducting GaAs, photoluminescence (PL) studies have been carried out. PL spectra have been obtained at 4K, 77K and 300K, for both n–and p–type GaAs, for laser energy densities 0 ≤ El ≤ 0.6 J/cm2. It is found that PLA of crystalline (c−) GaAs alters the PL spectrum and decreases the PL intensity, corresponding to an increase in density of non-radiative recombination centers with increasing El. The variation of PL intensity with El is found to be different for n– and p–type material. No PL is observed from high dose (1 or 5×1015 ions/cm2 ) Sior Zn-implanted GaAs, either before or after laser annealing. The results suggest that the ion implantation step is primarily responsible for formation of defects associated with the loss of radiative recombination, with pulsed annealing contributing only secondarily.

Formation of Q-carbon by adjusting sp3 content in diamond-like carbon films and laser energy density of pulsed laser annealing

Carbon ◽  
2020 ◽  
Vol 167 ◽  
pp. 504-511 ◽  
Author(s):  
Hiroki Yoshinaka ◽  
Seiko Inubushi ◽  
Takanori Wakita ◽  
Takayoshi Yokoya ◽  
Yuji Muraoka
Keyword(s):  
Energy Density ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Energy Density ◽  
Diamond Like Carbon ◽  
Pulsed Laser Annealing

Nonmelt Laser Annealing of 1 Kev Boron Implanted Silicon

2001 ◽  
Vol 669 ◽  
Author(s):  
Susan Earles ◽  
Mark Law ◽  
Kevin Jones ◽  
Somit Talwar ◽  
Sean Corcoran
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
High Dose ◽  
Ramp Rate ◽  
Dopant Activation ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
Ultra Shallow Junctions ◽  
Defect Nucleation ◽  
Probe Measurements

ABSTRACTHeavily-doped, ultra-shallow junctions in boron implanted silicon using pulsed laser annealing have been created. Laser energy in the nonmelt regime has been supplied to the silicon surface at a ramp rategreater than 1010°C/sec. This rapid ramp rate will help decrease dopant diffusion while supplying enough energy to the surface to produce dopant activation. High-dose, non-amorphizing 1 keV, 1e15 ions/cm2 boron is used. Four-point probe measurements (FPP) show a drop in sheet resistance withnonmelt laser annealing (NLA) alone. Transmission electron microscopy (TEM) shows the NLA dramatically affects the defect nucleation resulting in fewer defects with post annealing. Hall mobility and secondary ion mass spectroscopy (SIMS) results are also shown.

Pulsed Laser Annealing of Thin Silicon Films

2006 ◽  
Vol 45 (4A) ◽  
pp. 2437-2440 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Hajime Watakabe ◽  
Nobuyuki Andoh ◽  
Seiichiro Higashi
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Silicon Films ◽  
Pulsed Laser Annealing ◽  
Thin Silicon

Microstructural Control of Amorphous Silicon Films Crystallized using an Excimer Laser

1997 ◽  
Vol 472 ◽  
Author(s):  
J.W. Viatella ◽  
R.K. Singh
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
Single Crystal Silicon ◽  
Silicon Films ◽  
Crystal Silicon ◽  
Intimate Contact ◽  
Fine Grained ◽  
Silicon Thin Films ◽  
Fine Mesh ◽  
Microstructural Control

ABSTRACTThe results of experiments using two techniques for microstructural control of laser-annealed silicon thin films on SiO2 substrates are given. In the first set, photolithographically fabricated single-crystal silicon seed wafers in intimate contact with the silicon films are used to show that it is possible to control nucleation location during laser annealing. Laser energy density was varied from 250–450 mJ/cm2 and the resultant microstructure was characterized using transmission electron microscopy (TEM). It was found to consist of four distinct regions. Areas adjacent to the seed consisted of grains with dimensions ∼ 0.5 μm. The surrounding region consisted of larger (∼ 1 μm) rectangular grains. A third region was observed sporadically and consisted of large (∼ 1.5 μm) rectangular grains adjacent to the latter region. The fourth region occurred several microns away from the contact and consisted of a fine-grained microstructure. In the second set, fine mesh (19 μm) masks were used to selectively crystallize regions in laser-annealed films. The resultant microstructure was characterized using TEM and was found to consist of large (∼ 1.5 μm) edge grains with smaller (∼ 0.8 μm) grains just inside of the edge grains. A theoretical discussion is presented to explain the observed phenomena in both experiment sets.

Pulsed Laser Annealing of Zirconia Capped, Native Oxides Free GaAs Surfaces

1983 ◽  
Vol 23 ◽  
Author(s):  
D. Pribat ◽  
L.M. Mercandalli ◽  
M. Croset ◽  
J. Siejka
Keyword(s):  
Laser Irradiation ◽  
Laser Annealing ◽  
Defect Density ◽  
Pulsed Laser ◽  
Native Oxide ◽  
Thermally Activated ◽  
Native Oxides ◽  
Pulsed Laser Annealing ◽  
Gaas Substrates ◽  
Pulsed Laser Irradiation

ABSTRACTWe have studied the effects of pulsed laser irradiation on silicon implanted, thermally activated , Calcia Stabilized Zirconia (CSZ) capped GaAs substrates. Reference substrates have also been irradiated in air for comparison. CSZ as a solid electrolyte has been used to chemically reduce the GaAs surface native oxides prior to irradiation while maintaining the surface stoechiometry. Our results indicate a spectacular decrease in defect density after laser irradiation of the CSZ capped-native oxide free samples, as compared to the samples irradiated in air.

Transient Temperature Profiles in Silicon Films during Pulsed Laser Annealing

1991 ◽  
Vol 30 (Part 1, No. 11A) ◽  
pp. 2664-2672 ◽  
Author(s):  
Kazuhiro Shimizu ◽  
Shigeru Imai ◽  
Osamu Sugiura ◽  
Masakiyo Matsumura
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Silicon Films ◽  
Transient Temperature ◽  
Temperature Profiles ◽  
Pulsed Laser Annealing

An Ion-Scattering Study of Oxygen Indiffusion During Pulsed Laser Annealing/Cleaning of Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J.F.M. Westendorp ◽  
Z.L. Wang ◽  
F.W. Saris
Keyword(s):  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Single Pulse ◽  
Solubility Limit ◽  
Dissolution Time ◽  
Ion Scattering ◽  
Solid Solubility Limit ◽  
Pulsed Laser Annealing ◽  
Scattering Study

ABSTRACTOxygen indiffusion during pulsed laser annealing of silicon has been studied using the 186 O(α,α) 186 O resonance at 3.045 MeV. Anneals were carried out with a Q–switched ruby laser, energy density of the pulses 1.5 J/cm2 , pulse width 20 ns. No evidence for oxygen indiffusion was found, neither for ion–implanted single pulse air–annealed silicon nor for a silicon wafer, cleaned with 8 laser shots in a UHV environment. In the latter case, the upper limit of the oxygen concentration was found to be 3.1 * 1018 at/cm3 , which is lower than the solid solubility limit of oxygen in silicon. The non–occurrence of indiffusion is consistent with the dissolution time of SiO2 in Si, which is orders of magnitude longer than the melt duration of the Si–substrate.

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