Preferential Crystallization of β-FeSi2 from Micro-droplets Generated by Laser Ablation.

2004 ◽  
Vol 848 ◽  
Author(s):  
Aiko Narazaki ◽  
Tadatake Sato ◽  
Yoshizo Kawaguchi ◽  
Hiroyuki Niino
Keyword(s):  
Laser Ablation ◽  
Room Temperature ◽  
Crystallization Behavior ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Excimer Laser Ablation ◽  
Pulsed Laser Annealing ◽  
Molten Droplets ◽  
Equilibrium Process ◽  
Krf Excimer Laser

ABSTRACTβ-FeSi2 was successfully fabricated at room temperature via the deposition of molten micro-droplets generated by the KrF excimer laser ablation. Only the molten droplets precipitated as the β-FeSi2 crystalline phase on a silicon substrate kept even at room temperature, whereas the rest of film was amorphous. The crystallization behavior of micro-droplets has been discussed in the light of non-equilibrium process due to rapid cooling on the substrate. After the deposition, pulsed laser annealing was also performed in order to improve the crystallinity of the β-FeSi2 microprecipitates-containing film.

Effect of High Repetition Pulsed Laser Annealing on Optical Properties of Phosphorus Ion-Implanted ZnO Nanorods

2013 ◽  
Vol 699 ◽  
pp. 383-386
Author(s):  
Tetsuya Shimogaki ◽  
Taihei Ofuji ◽  
Norihiro Tetsuyama ◽  
Kota Okazaki ◽  
Mitsuhiro Higashihata ◽  
...  
Keyword(s):  
Optical Properties ◽  
Ion Implantation ◽  
Repetition Rate ◽  
Laser Annealing ◽  
Zno Nanorods ◽  
Pulsed Laser ◽  
High Repetition ◽  
Pulsed Laser Annealing ◽  
Krf Excimer Laser ◽  
Ion Implanted

We report on the effect of high repetition pulsed laser annealing with a KrF excimer laser on the optical properties of phosphorus ion-implanted ZnO nanorods. The recovery levels of phosphorus ion-implanted ZnO nanorods have been measured by photoluminescence spectra and cathode luminescence (CL) images. After ion implantation on the surface of ZnO nanorods, CL was disappeared over 400 nm below the surface due to the damage caused by ion implantation. When the annealing was performed at a low repetition, CL was recovered only shallow area below the surface. The depth of the annealed area was increased with the repetition rate of the annealing laser. By optimizing the annealing conditions such as the repetition rate, the irradiation fluence and so on, we have succeeded to anneal the whole damaged area over 400 nm in depth and to observe CL. Thus, the effectiveness of high repetition pulsed laser annealing on phosphorus ion-implanted ZnO nanorods was demonstrated.

Cubic boron nitride deposition on silicon substrates at room temperature by KrF excimer laser ablation of h-BN

2000 ◽  
Vol 70 (2) ◽  
pp. 197-201 ◽  
Author(s):  
S. Acquaviva ◽  
G. Leggieri ◽  
A. Luches ◽  
A. Perrone ◽  
A. Zocco ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Boron Nitride ◽  
Excimer Laser ◽  
Room Temperature ◽  
Cubic Boron Nitride ◽  
Silicon Substrates ◽  
Excimer Laser Ablation ◽  
Krf Excimer Laser

Thermally-Assisted Pulsed-Laser Annealing of SOS

1980 ◽  
Vol 1 ◽  
Author(s):  
Masayoshi Yamada ◽  
Ken-Ichi Yamazaki ◽  
Hisakazu Kotani ◽  
Keiichi Yamamoto ◽  
Kenji Abe
Keyword(s):  
Residual Strain ◽  
Room Temperature ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Single Crystal Silicon ◽  
Raman Shift ◽  
Crystal Silicon ◽  
Depolarization Factor ◽  
Pulsed Laser Annealing ◽  
Residual Strains

ABSTRACTThermally-assisted pulsed-laser annealing has been performed on ion-implanted silicon-on-sapphire(SOS) by irradiating Q-switched(20 nsec) ruby laser light during thermally heating. Raman scattering measurements have been made to estimate the residual strain of the annealed SOS. It was observed that Raman shift of SOS annealed in the temperature range of 400°C to 500°C was very close to that of single crystal silicon and the depolarization factor(the Raman intensity ratio of allowed z(xy)z to forbidden z(xx)z scattering configuration) was infinite, while Raman shift of SOS annealed at room temperature was shifted down to about 5 cm-1 and the depolarization factor was finite. It was found that the residual strain of SOS was relieved by the thermally-assisted pulsed-laser annealing, but the residual strain of SOS annealed at room temperature was inhomogeneous and attained to 7×10−3. The annealing temperature dependences of the residual strains were not explained well with a strictly thermal melting and recrystallization model in conjunction with the thermal expansion difference between silicon and sapphire, and suggested to need a new model.

Pulsed Laser Annealing of Al, Ni, and MgO Containing Nickel Precipitates

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Thermal Stresses ◽  
Laser Annealing ◽  
Laser Energy ◽  
Pulsed Laser ◽  
Dislocation Loops ◽  
Vacancy Loops ◽  
Pulsed Laser Annealing ◽  
Melting Threshold

ABSTRACTWe have investigated the generation of point defects and dislocations, and the formation of dislocation loops as a function of pulse energy density in laser annealed Al, Ni, and MgO containing nickel precipitates. In the case of Al where vacancies are mobile above 200 K, mostly vacancy loops were observed at room temperature in laser melted layers. Dislocations are formed below the laser-melted layers as well as in specimens treated with pulses below the melting threshold, due to thermal stresses. In the case of Ni (where vacancies are mobile above 373 K) the microstructure in room temperature laser annealed specimens consists of primarily dislocations and their tangles. In MgO:Ni crystals, enough laser energy was absorbed to melt nickel precipitates. The dislocation structure around the precipitates and the transformation of nickel precipitates from coherent into incoherent, provided information on melting and crystal growth of these precipitates.

Pulsed laser annealing of zinc implanted GaAs

1978 ◽  
Vol 14 (4) ◽  
pp. 85 ◽  
Author(s):  
S.S. Kular ◽  
B.J. Sealy ◽  
K.G. Stephens ◽  
D.R. Chick ◽  
Q.V. Davis ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing

Ferroelectric Hf 0.5 Zr 0.5 O 2 Thin Films Crystallized by Pulsed Laser Annealing

2021 ◽  
Author(s):  
Natalia Volodina ◽  
Anna Dmitriyeva ◽  
Anastasia Chouprik ◽  
Elena Gatskevich ◽  
Andrei Zenkevich
Keyword(s):  
Thin Films ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing
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