Annealing Effects in Low- and High-Stress Silicon Ribbon

1985 ◽  
Vol 59 ◽  
Author(s):  
K. A. Dumas ◽  
A. Briglio ◽  
L. J. Cheng
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
High Stress ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
X Ray ◽  
Silicon Ribbon ◽  
Structural And Electrical Properties ◽  
Annealing Effects

ABSTRACTX-ray topography and minority carrier lifetime measurements were used to study the structural and electrical properties in silicon dendritic web ribbon. The effects of annealing on the material quality of high- and lowstressribbon were investigated.

Surface Passivation of Silicon Wafers by Iodine-Ethanol (I-E) for Minority Carrier Lifetime Measurements

2013 ◽  
Vol 652-654 ◽  
pp. 901-905 ◽  
Author(s):  
Jing Wei Chen ◽  
Lei Zhao ◽  
Hong Wei Diao ◽  
Bao Jun Yan ◽  
Su Zhou ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
P Type ◽  
Different Thickness ◽  
Minority Carriers

The effective minority carrier lifetime (τeff) depends upon the quality of surface passivation, which by means of the microwave photoconductance decays (μPCD) method. The effective minority carrier lifetime (τeff) cannot reveal the real bulk lifetime of minority carriers (τb) . We have applied iodine-ethanol (I-E) treatment to silicon surface at different molar concentrations and shown that the effective concentrations ranges was 0.08mol/L~0.16 mol/L, the maximum The effective minority carrier lifetime (τeff) of n-type monocrystalline and p-type monocrystalline was 973.71μs and 362.6μs, respectively. We also accurately evaluate the bulk lifetime of minority carriers by measured with different thickness of silicon substrate.

Resistivity dependence of minority carrier lifetime and cell performance in p-type dendritic web silicon ribbon

2001 ◽  
Vol 45 (12) ◽  
pp. 1973-1978 ◽  
Author(s):  
Mohamed Hilali ◽  
Abasifreke Ebong ◽  
Ajeet Rohatgi ◽  
Daniel L Meier
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Cell Performance ◽  
Silicon Ribbon ◽  
P Type

Minority Carrier Lifetime Measurements by Photoinduced Carrier Microwave Absorption Method

2011 ◽  
Vol 50 (3S) ◽  
pp. 03CA02 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Tomokazu Nagao ◽  
Shinya Yoshidomi ◽  
Kazuya Kogure ◽  
Masahiko Hasumi
Keyword(s):  
Microwave Absorption ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Absorption Method ◽  
Lifetime Measurements

Contactless Evaluation Of The Stress In X-Ray Mask Wafers (SiN/Si) Using A Laser/Microwave Method.

1993 ◽  
Vol 306 ◽  
Author(s):  
Masatoshi Oda ◽  
Akira Usami ◽  
Takahisa Nakai ◽  
Akira Ito ◽  
Masaya Ichimura ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Microwave Method ◽  
Carrier Injection ◽  
X Ray ◽  
Semiconductor Laser Diode ◽  
Membrane Fabrication ◽  
Microwave System ◽  
Si Wafer

AbstractHighly accurate X-ray masks are strongly required to establish SR lithography technology. X-ray masks must be produced as accurately as the LSI devices, because a one-toone projection aligner system is used. To minimize the in-plane mask distortion, it is desirable to estimate the value of the stress and the non-uniformity in the membrane fabrication (SiN) process. The values of the stress were estimated from the measurement of the warpage and the calculation. It is very difficult to obtain the stress distribution in the SiN/Si wafer. Thus, we measured the minority carrier lifetime distribution using the non-contact laser/microwave method. The carrier injection was done by a 774nm or 904nm semiconductor laser diode, and their beam was focused to about 500 μmφ. The surface lifetime, τ s, of the SiN/Si wafer with the stress over ˜ 108dyn/cm2 decreased to 60–70% of that of the bare Si wafer. Thus, the contactless laser/microwave system can be adaptable for the characterization in the X-ray mask process.

Minority Carrier Lifetime Measurements in Specific Epitaxial 4H-SiC Layers by the Microwave Photoconductivity Decay

2009 ◽  
Vol 615-617 ◽  
pp. 295-298 ◽  
Author(s):  
Laurent Ottaviani ◽  
Olivier Palais ◽  
Damien Barakel ◽  
Marcel Pasquinelli
Keyword(s):  
Absorption Spectra ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Optical Excitation ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
Recombination Processes ◽  
Photoconductivity Decay ◽  
P Type ◽  
Non Destructive

We report on measurements of the minority carrier lifetime for different epitaxial 4H-SiC layers by using the microwave photoconductivity decay (µ-PCD) method. This is a non-contacting, non-destructive method very useful for the monitoring of recombination processes in semiconductor material. Distinct samples have been analyzed, giving different lifetime values. Transmittance and absorption spectra have also been carried out. The n-type layers, giving rise to a specific absorption peak near 470 nm, are not sensitive to optical excitation for the used wavelengths, as opposite to p-type layers whose lifetime values depend on thickness and doping.

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