(Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography

2016 ◽  
Vol 75 (12) ◽  
pp. 215-231
Author(s):  
O. Y. Goue ◽  
J. Guo ◽  
Y. Yang ◽  
B. Raghothamachar ◽  
M. Dudley
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
X Ray

Contactless Evaluation Of The Stress In X-Ray Mask Wafers (SiN/Si) Using A Laser/Microwave Method.

1993 ◽  
Vol 306 ◽  
Author(s):  
Masatoshi Oda ◽  
Akira Usami ◽  
Takahisa Nakai ◽  
Akira Ito ◽  
Masaya Ichimura ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Microwave Method ◽  
Carrier Injection ◽  
X Ray ◽  
Semiconductor Laser Diode ◽  
Membrane Fabrication ◽  
Microwave System ◽  
Si Wafer

AbstractHighly accurate X-ray masks are strongly required to establish SR lithography technology. X-ray masks must be produced as accurately as the LSI devices, because a one-toone projection aligner system is used. To minimize the in-plane mask distortion, it is desirable to estimate the value of the stress and the non-uniformity in the membrane fabrication (SiN) process. The values of the stress were estimated from the measurement of the warpage and the calculation. It is very difficult to obtain the stress distribution in the SiN/Si wafer. Thus, we measured the minority carrier lifetime distribution using the non-contact laser/microwave method. The carrier injection was done by a 774nm or 904nm semiconductor laser diode, and their beam was focused to about 500 μmφ. The surface lifetime, τ s, of the SiN/Si wafer with the stress over ˜ 108dyn/cm2 decreased to 60–70% of that of the bare Si wafer. Thus, the contactless laser/microwave system can be adaptable for the characterization in the X-ray mask process.

Annealing Effects in Low- and High-Stress Silicon Ribbon

1985 ◽  
Vol 59 ◽  
Author(s):  
K. A. Dumas ◽  
A. Briglio ◽  
L. J. Cheng
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
High Stress ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
X Ray ◽  
Silicon Ribbon ◽  
Structural And Electrical Properties ◽  
Annealing Effects

ABSTRACTX-ray topography and minority carrier lifetime measurements were used to study the structural and electrical properties in silicon dendritic web ribbon. The effects of annealing on the material quality of high- and lowstressribbon were investigated.

Defect Formation in CW CO2 Laser Annealed Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
H. Baumgart ◽  
F. Phillipp ◽  
H. J. Leamy
Keyword(s):  
Laser Annealing ◽  
Carrier Lifetime ◽  
Defect Formation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Dislocation Loops ◽  
X Ray ◽  
Sem Study ◽  
Recombination Centers ◽  
Cw Co2 Laser

ABSTRACTThe EBIC mode of the SEM has been used to investigate the perfection of cw CO2 laser annealed Si. Even in material that contains no slip lines, non-uniform charge collection is found. A combined X-ray and electron microscopy (TEM, SEM) study identified the residual defects responsible for the EBIC contrast as interstitial submicron dislocation loops. Scanning cw laser annealing independent of the wavelength (10.6μm or 0.514μm) always introduces residual defects which act as recombination centers and reduce minority carrier lifetime.

Microwave transmission method for measuring minority-carrier lifetime in silicon slices

1971 ◽  
Vol 7 (25) ◽  
pp. 754
Author(s):  
R.E. Thomas ◽  
V. Makios ◽  
S. Ogletree ◽  
R. Mckillican
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Transmission Method ◽  
Microwave Transmission

scholarly journals Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen

2019 ◽  
Vol 3 (6) ◽  
Author(s):  
Zhihao Xu ◽  
Denis A. Shohonov ◽  
Andrew B. Filonov ◽  
Kazuhiro Gotoh ◽  
Tianguo Deng ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Marked Enhancement
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