Hydrogen Release and Si-N Bond-Healing Infrared Study of Rapid Thermal Annealed Amorphous Silicon Nitride Thin Films

1995 ◽  
Vol 398 ◽  
Author(s):  
P. Santos-Filho ◽  
G. Stevens ◽  
Z. Lu ◽  
K. Koh ◽  
G. Lucovsky
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Gas Flow ◽  
Structural Changes ◽  
Thermal Dissociation ◽  
Chemical Vapor ◽  
Hydrogen Release ◽  
Ex Situ ◽  
Infrared Study ◽  
Amorphous Silicon Nitride

ABSTRACTWe address aspects of hydrogen bonding and its thermal evolution in amorphous Silicon nitride films grown by Remote Plasma Enhanced Chemical Vapor Deposition (RPECVD) from SiH4 and NH3 (or ND3) source gases. Rapid Thermal Annealing (RTA) decreases the Si-H(D) and SiN-H(D) bond populations. The hydrogen bonds break, and H2 (HD, D2) forms and evolves from the film with the heat treatment. This molecular hydrogen release is accompanied by Si- and N- bond healing as detected by a SiN infra red stretch mode signal gain. The ex-situ RTA experiment temperatures ranged from 400 °C to 1200 °C, in 100 °C steps and the film structural changes were monitored by Fourier Transform Infrared spectroscopy (FTIR) after each incremental anneal. Gas flow ratios R=NH3/SiH4 > 2 produced films in which SiN-H(D) bonds dissociated, and a gas desorption rate equation estimated an activation energy barrier of Ea = 0.3 eV. The release of hydrogen from the films in the form of H2 (D2) and ammonia radicals was detected by mass spectrometry and is shown here. The re-bonding of nitrogen to silicon upon thermal dissociation of hydrogen's is consistent with the improvement of the electrical properties of a-SiN:H films following RTA treatment.

scholarly journals Effect of Thermal Annealing on the Photoluminescence of Dense Si Nanodots Embedded in Amorphous Silicon Nitride Films

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 354
Author(s):  
Qianqian Liu ◽  
Xiaoxuan Chen ◽  
Hongliang Li ◽  
Yanqing Guo ◽  
Jie Song ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Thermal Annealing ◽  
Chemical Vapor ◽  
Peak Position ◽  
Excitation Wavelength ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma

Luminescent amorphous silicon nitride-containing dense Si nanodots were prepared by using very-high-frequency plasma-enhanced chemical vapor deposition at 250 °C. The influence of thermal annealing on photoluminescence (PL) was studied. Compared with the pristine film, thermal annealing at 1000 °C gave rise to a significant enhancement by more than twofold in terms of PL intensity. The PL featured a nanosecond recombination dynamic. The PL peak position was independent of the excitation wavelength and measured temperatures. By combining the Raman spectra and infrared absorption spectra analyses, the enhanced PL was suggested to be from the increased density of radiative centers related to the Si dangling bonds (K0) and N4+ or N20 as a result of bonding configuration reconstruction.

Oxygenated and Fluorinated Amorphous Silicon Nitride Films and their Use in Thin Film Transistors

1989 ◽  
Vol 149 ◽  
Author(s):  
P. K. Bhat ◽  
H. Ogura ◽  
A. Madan
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Thin Film Transistors ◽  
Chemical Vapor ◽  
Drain Current ◽  
Silicon Oxynitride ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
Insulator Film

ABSTRACTWe present a comparison of the properties of films of amorphous silicon nitride, amorphous silicon oxynitride, and amorphous fluorinated silicon nitride deposited by plasma enhanced chemical vapor deposition. The properties of fluorinated silicon nitride films degrade when exposed to air. TFT devices fabricated with silicon nitride and silicon oxynitride insulators show thteshold voltages ≤3 V and source drain current ON/OFF ratios exceeding 107 for gate voltages smaller than 20 V, whereas TFTs with fluorinated silicon nitride insulators show an inferior performance. We also present ideas on the possible relation between the stress in the insulator film and the reliability of TFTs fabricated using these layers.

Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Nancy Voke ◽  
Jerzy Kanicki
Keyword(s):  
Silicon Nitride ◽  
Electrical Properties ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Optical And Electrical Properties ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Special attention has been devoted to the influence of hydrogen on optical and electrical properties.

Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems

1986 ◽  
Vol 68 ◽  
Author(s):  
Jerzy Kanicki ◽  
Nancy Voke
Keyword(s):  
Mechanical Properties ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Amorphous Silicon Nitride ◽  
Full Characterization ◽  
Silicon Nitride Films ◽  
Physico Chemical ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon nitride films, prepared in various commercially available plasma enhanced chemical vapor deposition systems, have been investigated in terms of different deposition conditions.The full characterization of these gate insulators has been carried out by different techniques.Experimental data and interesting findings obtained from this study are presented.Indeed, some valuable relationships between physico-chemical and mechanical properties have been established.Special attention has been devoted to the influence of hydrogen on these properties.

Photoluminescence Properties of Silicon Nitride Prepared by VHF-PECVD

2012 ◽  
Vol 531-532 ◽  
pp. 392-395
Author(s):  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
Xiang Wang
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Light Emission ◽  
Chemical Vapor ◽  
Very High Frequency ◽  
Amorphous Silicon Nitride ◽  
Silicon Nitride Films ◽  
High Frequency Plasma ◽  
Vapor Deposition Technique ◽  
Silicon Based

Since the visible photoluminescence (PL) in porous Si was observed by Canham, much attention has been paid to the light emission from silicon-based materials. In this work, luminescent amorphous silicon nitride films were prepared by very-high-frequency plasma enhanced chemical vapor deposition technique using ammonia, silane and hydrogen as source gases at a low temperature of 50 °C. It is found that the films exhibit strong visible light emissions with ranging from green to red region. Photoluminescence spectra show that the emission peaks as well as intensity strongly depends on the flow rates of ammonia. Combining with the analyses of Fourier transform infrared absorption spectra and the transmission spectra, it is suggested that the light emissions are originated from the radiative recombination in the band-tail states of amorphous silicon nitride.

Amorphous silicon nitride deposited by hot-wire chemical vapor deposition

2004 ◽  
Vol 96 (5) ◽  
pp. 2973-2979 ◽  
Author(s):  
Fengzhen Liu ◽  
Scott Ward ◽  
Lynn Gedvilas ◽  
Brian Keyes ◽  
Bob To ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Amorphous Silicon Nitride
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