Growth of highly oriented CdS thin films by laser‐evaporation deposition

1988 ◽  
Vol 52 (13) ◽  
pp. 1095-1097 ◽  
Author(s):  
H. S. Kwok ◽  
J. P. Zheng ◽  
S. Witanachchi ◽  
P. Mattocks ◽  
L. Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Evaporation ◽  
Cds Thin Films

Fabrication of CDS Thin Films Using Continuous Wave Laser Evaporation

1995 ◽  
Vol 397 ◽  
Author(s):  
E.W. Tenpas ◽  
K. D. Vuong ◽  
S. Orloff ◽  
J.G. Fagan ◽  
V. Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Continuous Wave ◽  
Soda Lime ◽  
Laser Evaporation ◽  
Transmission Electron Microscopy Analysis ◽  
Electron Microscopy Analysis ◽  
Size Groups ◽  
Cds Thin Films ◽  
Glass Silica ◽  
Different Grain Size

ABSTRACTWe report new results on continuous wave Nd: YAG laser deposition of Cadmium Sulfide (CdS) thin films. Substrates were soda-lime silicate (SLS) glass, silica glass, silicon, alumina, and copper coated formvar sheets. As-deposited films were characteristically mixtures of cubic and hexagonal phases. X-ray diffraction analysis reveals that two different grain size groups are present. As revealed by SEM micrographs, films had smooth surface morphology. Transmission electron microscopy analysis reveals that grain sizes were extremely small. Also, semiconductive behavior was noted.

Laser Deposition of CdS Thin films on Various Substrates

1990 ◽  
Vol 201 ◽  
Author(s):  
L. Shi ◽  
Y. Hashishin ◽  
S. Y. Dong ◽  
H. S. Kwok
Keyword(s):  
Thin Films ◽  
Film Formation ◽  
Laser Deposition ◽  
Laser Evaporation ◽  
Superconducting Transition ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Cds Thin Films ◽  
Cds Films

AbstractWe have deposited CdS thin films onto substrates such as glass, sapphire and high Tc YBCO superconducting films by Nd:YAG laser evaporation in a vacuum environment. X-ray diffraction, optical and electrical measurements were used to study the deposited CdS films. The films are highly oriented with c-axis perpendicular to the surface and are optically smooth. The effects of laser fluence, substrate temperature on the film quality will be discussed. Additionally, Indium doped CdS films were also grown on sapphire substrates by laser deposition. In-situ resistivity measurements were employed to study the film formation process during laser deposition. A simple model was given to explain the in-situ resistivity data. Finally, a deposition temperature window was found to produce good quality CdS/YBCO heterostructures. The superconducting transition temperature of the YBCO films was degraded to 68K from an original Tc of 85 K after CdS deposition. The degradation of the superconducting properties was found mainly due to the interactions in the interface region.

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

Preparation of CdS Thin Films by Reactive Sputtering Method

Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI
Keyword(s):  
Thin Films ◽  
Reactive Sputtering ◽  
Cds Thin Films

Single Crystal, High Band Gap CdS Thin Films Grown by RF Magnetron Sputtering in Argon Atmosphere for Solar Cell Applications

2018 ◽  
Vol 10 (3) ◽  
pp. 03005-1-03005-6 ◽  
Author(s):  
Rupali Kulkarni ◽  
◽  
Amit Pawbake ◽  
Ravindra Waykar ◽  
Ashok Jadhawar ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Magnetron Sputtering ◽  
Single Crystal ◽  
Band Gap ◽  
Rf Magnetron Sputtering ◽  
Argon Atmosphere ◽  
Cds Thin Films ◽  
High Band
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