Optical and Electrical Properties of Heavily Carbon-Doped Gaas Fabricated by High-Energy Ion-Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
Takayuki Shima ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Kentaro Harada ◽  
Tsutomu Iida ◽  
...  

AbstractHigh-energy (400 keV) implantation of carbon (C) ions was made into LEC-GaAs substrates with C concentration ([C]) of 1019− 1022Cm−3. 2 K photoluminescence (PL) and Hall effect measurements indicated that activation rate of C in LEC GaAs is both optically and electrically extremely low even after furnace-annealing at 850 °C for 20 min. For [C] = 1×1022 cm−3, two novel strong emissions were obtained and PL measurements as a function of excitation power and sample temperature suggested that the two emissions one at 1.485 eV and the other at 1.305 eV should reflect the formation of a new alloy between GaAs and C. Dual implantation of C+ and Ga+ ions was carried out to improve the activation or substitution rate. We found that nearly 90% activation rate can be achieved for C dose of 2.2 × 1013 cm−2.

1987 ◽  
Vol 92 ◽  
Author(s):  
Ronald N. Legge ◽  
Wayne M. Paulson

ABSTRACTRapid thermal annealing (RTA) technology offers potential advantages for the processing of ion implanted GaAs. High energy implants of 300 keV or above are used for power MESFETs as well as in the ohmic contacts for low noise devices. The purpose of this paper is to investigate and characterize the RTA of Si implants into LEC GaAs using implant energies of 300keV and above, and a range of doses from 2.3 ×1012 to 3×1014 /cm2. The wafers were analyzed using capacitance-voltage and Hall measurements. Factors which cause variability in pinchoff voltage are identified and an RTA process comparable to conventional furnace annealing is presented for low dose implants. Superior implant activation is observed for higher dose implants through the use of higher annealing temperature.


1992 ◽  
Vol 262 ◽  
Author(s):  
S. Tüzemem ◽  
M. R. Brozel

ABSTRACTThe novel infrared imaging technique for assessment of undoped semi-insulating (SI) GaAs substrates known as Reverse Contrast is known to result from absorption from point defects whose concentrations approximately anti-correlate with those of EL2, deep donor defects. The absorption that occurs within - 65 meV of Eg in cooled samples is sufficiently strong that commercial wafers can be mapped with simple infrared CCTV imaging equipment. RC defects are thought to be very deep acceptors with an ionization energy close to the Conduction Band. Concentrations of RC defects are not measurable in SI GaAs as they are un-ionized in the dark. Like EL2 defects they can be photo-quenched by irradiation with mid-gap light.In this paper, we present novel Hall Effect measurements on very lightly Te-doped n-type GaAs where at least a fraction of RC defects are ionized. A permanent increase in the carrier concentration is observed after photo-quenching corresponding to the bleaching of RC defects. The carrier concentration returns to its initial value at the same temperature at which the absorption of RC defects is recovered. This result allows a calibration for the absorption coefficient to be found.


1995 ◽  
Vol 396 ◽  
Author(s):  
K. Harada ◽  
Y. Makita ◽  
H. Shibata ◽  
B. Lo ◽  
A. C. Beye ◽  
...  

AbstractHg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called “g” line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations INA-NDI greater than 2×1017cm−3 . This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.


1997 ◽  
Vol 482 ◽  
Author(s):  
David M. Tricker ◽  
Paul D. Brown ◽  
Graeme Martin ◽  
J. Lu ◽  
D. I. Westwood ◽  
...  

AbstractThe evolution of the microstructure of GaN grown by molecular beam epitaxy on {001} and {111} oriented GaAs substrates has been followed using transmission electron microscopy and reflection high energy electron diffraction. A thin layer of GaN has been shown to form during the nitridation of the GaAs surface prior to growth. Growth of GaN then proceeds by an island mechanism. Faulting on the four {111} planes of the cubic zinc-blende phase which grows on the {001 } surface occurs at an early stage as a consequence of misfit strain. The distribution of the {111} microtwins is initially isotropic, but growth of one pair of {111} twins proceeds much faster than that of the other pair, leading to a final microstructure which has an anisotropic distribution of microtwins. Doping of GaN with Si hinders the growth of the zinc-blende phase, leading to a textured, columnar (0001) wurtzite microstructure. Evidence is presented to show that addition of Mg as a dopant may reduce the stacking fault energy of wurtzite GaN.


2013 ◽  
Vol 340 ◽  
pp. 362-365
Author(s):  
Wei Wei Xiong ◽  
Jing Guo ◽  
Xi Chen ◽  
Cheng Yi Zhang

The research concentrates on the preparation of the Nontoxic multi-color fluorescent substance. Fluorescent substance in biology exists two major shortcomings, one is that they are toxic and the other is that they are relatively monotonous, only emitting light of a single color. In response to this situation, we propose a new preparation method of multi-color, non-toxic fluorescent substance and study its fluorescence characteristics.


1993 ◽  
Vol 312 ◽  
Author(s):  
Richard Mirin ◽  
Mohan Krishnamurthy ◽  
James Ibbetson ◽  
Arthur Gossard ◽  
John English ◽  
...  

AbstractHigh temperature (≥ 650°C) MBE growth of AlAs and AlAs/GaAs superlattices on (100) GaAs is shown to lead to quasi-periodic facetting. We demonstrate that the facetting is only due to the AlAs layers, and growth of GaAs on top of the facets replanarizes the surface. We show that the roughness between the AlAs and GaAs layers increases with increasing number of periods in the superlattice. The roughness increases to form distinct facets, which rapidly grow at the expense of the (100) surface. Within a few periods of the initial facet formation, the (100) surface has disappeared and only the facet planes are visible in cross-sectional transmission electron micrographs. At this point, the reflection high-energy electron diffraction pattern is spotty, and the specular spot is a distinct chevron. We also show that the facetting becomes more pronounced as the substrate temperature is increased from 620°C to 710°C. Atomic force micrographs show that the valleys enclosed by the facets can be several microns long, but they may also be only several nanometers long, depending on the growth conditions.


Author(s):  
A. Castell ◽  
C. Sole´ ◽  
M. Medrano ◽  
M. Nogue´s ◽  
L. F. Cabeza

Most of the storage systems available on the market use water as storage medium. Enhancing the storage performance is necessary to increase the performance of most systems. The stratification phenomenon is employed to improve the efficiency of storage tanks. Heat at an intermediate temperature, not high enough to heat up the top layer, can still be used to heat the lower, colder layers. There are a lot of parameters to study the stratification in a water tank such as the Mix Number and the Richardson Number among others. The idea studied here was to use these stratification parameters to compare two tanks with the same dimensions during charging and discharging processes. One of them is a traditional water tank and the other is a PCM-water (a water tank with a Phase Change Material). A PCM is good because it has high energy density if there is a small temperature change, since then the latent heat is much larger than the sensible heat. On the other hand, the temperature change in the top layer of a hot water store with stratification is usually small as it is held as close as possible at or above the temperature for usage. In the system studied the Phase Change Material is placed at the top of the tank, therefore the advantages of the stratification still remain. The aim of this work is to demonstrate that the use of PCM in the upper part of a water tank holds or improves the benefit of the stratification phenomenon.


1995 ◽  
Vol 399 ◽  
Author(s):  
R.J. Smith ◽  
Adli A. Saleh ◽  
V. Shutthanandan ◽  
N.R. Shivaparan ◽  
V. Krasemann

ABSTRACTThe growth of thin Pd, Ni, Fe and Ti films on Al(110) surfaces has been studied using high-energy ion scattering (HEIS), x-ray photoemission spectroscopy and photoelectron diffraction techniques. Of these four metals, only Ti grows as an epitaxial overlayer, while the other metals mix with the substrate to form surface alloys. In the HEIS experiments the backscattered ion yield from Al surface atoms is measured as a function of metal coverage on the Al surface. A decrease in the Al scattering is observed for Ti deposition while the other metals result in increased Al scattering, attributed to alloy formation. An explanation for the exceptional growth behavior of Ti on Al is provided using a model of surface strain associated with aluminide formation.


1987 ◽  
Vol 01 (03n04) ◽  
pp. 1067-1070 ◽  
Author(s):  
M. Petravić ◽  
A. Hamzić ◽  
B. Leontić ◽  
L. Forró

We present Hall effect measurements in the normal state of the high temperature superconducting ceramics La2−xSrxCuO4 (x=0, 0.1, 0.15, 0.2, 0.25, 0.3), YBa2Cu3o7 and GdBa2Cu3O7 . The first family has temperature independent Hall constant for x>0, while in the other two systems RH is proportional to 1/T. From the Hall effect it follows that the transport in these compounds is hole-like.


2020 ◽  
Author(s):  
Saeid Zare ◽  
Omid Askari

Abstract High velocity flows, as in aerospace applications require special techniques to stabilize and ignite diffusion flames. Some techniques focus on changing parameters like geometry, conditions of the flow, or fuel composition, but these techniques are usually too expensive or impossible due to major changes in the system. On the other hand, some techniques focus on generating a region of charged/excited species and active radicals upstream of the flame. That can substantially enhance the flame stability even under high strain rate or at lean-limit-flammability conditions. Repetitive nanosecond pulsed (RNP) discharge plasma is a nonthermal plasma technique with some remarkable potential to improve stability and ignitability of high velocity diffusion flames. This technique was used in previous papers in a plasma assisted coaxial inverse diffusion burner and showed some promising results by reducing the lift-off height and delaying detachment and blowout conditions. This burner is prepared to employ the discharges at the burner nozzle and simulate a single element of a multi-element methane burner. However, effectiveness of high-voltage high-frequency RNP plasma was limited by the mode of the discharge. During the tests, three different modes were observed at different combinations of plasma and flow conditions. These three modes are low energy corona, uniformly distributed plasma, and high-energy point-to-point discharge. Among these three, only well-distributed plasma significantly improved the flame. In other cases, plasma deployment was either ineffective or in some cases adversely affected the flame by producing undesirable turbulence advancing blow out. As a result, a comprehensive study of these modes is required. In this work, the transition between these three modes in a jet flame was discussed. It has been expressed as a function of plasma conditions, i.e. peak discharge voltage and discharge frequency. It was shown that increasing flow speed delays increases the voltage and frequency at which transition occurs from low-energy corona discharge to well distributed plasma discharge. Subsequently, the effective plasma conditions are thinned. On the other hand, by increasing the frequency of nanosecond discharges, the chance of unstable point-to-point discharges is decreased. In contrast, the discharge peak voltage causes two different consequences. If it is too low, the pulse intensity is too week that the system will experience no visible plasma discharges or the discharges will not pass the low-energy corona, no matter how high the frequency is. If too high, it will enhance the chance of point-to-point discharges and limits the stabilization outcome of the system. Therefore, an optimal region is found for peak discharge voltage.


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