The Detailed Dependence of Implanted Phosphorus Profiles in (100) Single-Crystal Si on Key Implant Parameters

1995 ◽  
Vol 396 ◽  
Author(s):  
V. Ghante ◽  
L. M. Lam ◽  
S. Morris ◽  
S.-H. Yang ◽  
A. F. Tasch ◽  
...  

AbstractThe continued decrease in semiconductor device feature size has required much smaller thermal processing budgets in order to achieve the required compact doping profiles. As a result, the impurity profiles have a larger dependence on the ion implant parameters, and more attention must be given to minimizing channeling, which results in deeper implanted profiles. Thus, there is a need for a detailed understanding of the dependence of the implanted profile on the key implant parameters. Since such an understanding does not exist for phosphorus implants in silicon, a detailed study has been performed by obtaining experimental phosphorus impurity profiles for a wide range of implant energies (15 - 180 keV), doses (lx1013- 8×1015 cm–2), tilt angles (0° - 10°), and rotation angles (0° - 360°). Channeling along the <100 axial channel dominates the variations. (110) planar channeling is the next most important channeling effect, appearing at higher (5°) tilt angles, where <100 axial channeling is suppressed. (100) planar channeling is not observed at the lower energies but does manifest itself for energies of 80keV and greater. Dose dependencies play a large role beginning around lxlO14 cm-2.

Author(s):  
J.L. Batstone

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).


2012 ◽  
Vol 195 ◽  
pp. 128-131 ◽  
Author(s):  
Hun Hee Lee ◽  
Min Sang Yun ◽  
Hyun Wook Lee ◽  
Jin Goo Park

As the feature size of semiconductor device shrinks continuously, various high-K metals for 3-D structures have been applied to improve the device performance, such as high speed and low power consumption. Metal gate fabrication requires the removal of metal and polymer residues after etching process without causing any undesired etching and corrosion of metals. The conventional sulfuric-peroxide mixture (SPM) has many disadvantages like the corrosion of metals, environmental issues etc., DSP+(dilute sulfuric-peroxide-HF mixture) chemical is currently used for the removal of post etch residues on device surface, to replace the conventional SPM cleaning [. Due to the increased usage of metal gate in devices in recent times, the application of DSP+chemicals for cleaning processes also increases [.


1998 ◽  
Vol 4 (S2) ◽  
pp. 470-471
Author(s):  
N. D. Evans ◽  
E. A. Kenik ◽  
M. K. Miller

The Shared Research Equipment (SHaRE) User Facility and Program at Oak Ridge National Laboratory (ORNL) provides microanalytical facilities for studies within the materials sciences. Available instrumentation includes advanced analytical electron microscopes, atom probe field ion microscopes, and nanoindentation facilities. Through SHaRE, researchers from U.S. universities, industries, and government laboratories may collaborate with Facility scientists to perform research not possible at their home institutions. International collaborations are also possible. Most SHaRE projects seek correlations at the microscopic or atomic scale between structure and properties in a wide range of metallic, ceramic, and other structural materials. Typical research projects include studies of magnetic materials, advanced alloys, catalysts, semiconductor device materials, high Tc superconductors, and surface-modified polymers. Projects usually involve one or more external researchers visiting the SHaRE Facility for up to three weeks during the fiscal year (October 1 - September 30). Project approval is based upon the scientific excellence and relevance of proposed collaborative research.


1988 ◽  
Vol 27 (Part 2, No. 3) ◽  
pp. L444-L447 ◽  
Author(s):  
Yoshihide Kimura ◽  
Hee Jae Kang ◽  
Ryuichi Shimizu

1990 ◽  
Vol 198 ◽  
Author(s):  
D.C. Houghton ◽  
N.L. Rowell

ABSTRACTThe thermal constraints for device processing imposed by strain relaxation have been determined for a wide range of Si-Ge strained heterostructures. Misfit dislocation densities and glide velocities in uncapped Sil-xGex alloy layers, Sil-xGex single and multiple quantum wells have been measured using defect etching and TEM for a range of anneal temperatures (450°C-1000°C) and anneal times (5s-2000s). The decay of an intense photoluminescence peak (∼ 10% internal quantum efficiency ) from buried Si1-xGex strained layers has been correlated with the generation of misfit dislocations in adjacent Sil-xGex /Si interfaces. The misfit dislocation nucleation rate and glide velocity for all geometries and alloy compositions (0<x<0.25) were found to be thermally activated processes with activation energies of (2.5±0.2)eV and (2.3-0.65x)eV, respectively. The time-temperature regime available for thermal processing is mapped out as a function of dislocation density using a new kinetic model.


2004 ◽  
Vol 853 ◽  
Author(s):  
Puja B. Kadolkar ◽  
Ronald D. Ott ◽  
Craig A. Blue ◽  
Adrian S. Sabau

ABSTRACTPulse Thermal Processing (PTP) using a High Density Infrared (HDI) Plasma Arc Lamp has been investigated as an enabling manufacturing tool for processing nanomaterials and thin-films. HDI is a single source lamp that offers unique capabilities of processing broad areas with power densities approaching those of a laser. The extremely high radiant energies delivered by the plasma arc lamp provides heating rates approaching 600, 000°C/s through a single pulse on a millisecond time frame, thus allowing controlled diffusion on nano-meter scale. The ability to design the functionality of nanomaterials offers tremendous potential to exploit this technology for a wide range of applications based on nanotechnology. This present article discusses application of PTP using high-density plasma arc lamp to perform; a) phase transformation in FePt nanoparticle system for magnetic media applications, and b) crystallization of amorphous Si (a-Si) for photovoltaic and thin-film transistor (TFT) applications.


2020 ◽  
Author(s):  
M. L. Hutchinson ◽  
J. E. L. Corry ◽  
R. H. Madden

For meat and meat products, secondary processes are those that relate to the downstream of the primary chilling of carcasses. Secondary processes include maturation chilling, deboning, portioning, mincing and other operations such as thermal processing (cooking) that create fresh meat, meat preparations and ready-to-eat meat products. This review systematically identified and summarised information relating to antimicrobial resistance (AMR) during the manufacture of secondary processed meatand meat products (SPMMP). Systematic searching of eight literature databases was undertaken and the resultantpapers were appraised for relevance to AMR and SPMMP. Consideration was made that the appraisal scores, undertaken by different reviewers, were consistent. Appraisal reduced the 11,000 initially identified documents to 74, which indicated that literature relating to AMR and SPMMP was not plentiful. A wide range of laboratory methods and breakpoint values (i.e. the concentration of antimicrobial used to assess sensitivity, tolerance or resistance) were used for the isolation of AMR bacteria.The identified papers provided evidence that AMR bacteria could be routinely isolated from SPMMP. There was no evidence that either confirmed or refuted that genetic materials capable of increasing AMR in non-AMR bacteria were present unprotected (i.e. outside of a cell or a capsid) in SPMMP. Statistical analyses were not straightforward because different authors used different laboratory methodologies.However, analyses using antibiotic organised into broadly-related groups indicated that Enterobacteriaceaeresistant to third generation cephalosporins might be an area of upcoming concern in SPMMP. The effective treatment of patients infected with Enterobacteriaceaeresistant to cephalosporins are a known clinical issue. No AMR associations with geography were observed and most of the publications identified tended to be from Europe and the far east.AMR Listeria monocytogenes and lactic acid bacteria could be tolerant to cleaning and disinfection in secondary processing environments. The basis of the tolerance could be genetic (e.g. efflux pumps) or environmental (e.g. biofilm growth). Persistent, plant resident, AMR L. monocytogenes were shown by one study to be the source of final product contamination. 4 AMR genes can be present in bacterial cultures used for the manufacture of fermented SPMMP. Furthermore, there was broad evidence that AMR loci could be transferred during meat fermentation, with refrigeration temperatures curtailing transfer rates. Given the potential for AMR transfer, it may be prudent to advise food business operators (FBOs) to use fermentation starter cultures that are AMR-free or not contained within easily mobilisable genetic elements. Thermal processing was seen to be the only secondary processing stage that served as a critical control point for numbers of AMR bacteria. There were significant linkages between some AMR genes in Salmonella. Quaternary ammonium compound (QAC) resistance genes were associated with copper, tetracycline and sulphonamide resistance by virtue of co-location on the same plasmid. No evidence was found that either supported or refuted that there was any association between AMR genes and genes that encoded an altered stress response or enhanced the survival of AMR bacteria exposed to harmful environmental conditions.


1996 ◽  
Vol 429 ◽  
Author(s):  
P. J. Timans

AbstractRapid thermal processing (RTP) has become a key technology in the fabrication of advanced semiconductor devices. As RTP becomes the accepted technique for an increasingly wide range of processes in device fabrication, the understanding of the basic physics of radiation heat transfer in RTP systems is also being extended rapidly. This paper illustrates the use of optical models for prediction of the thermal radiative properties of semiconductor wafers. Such calculations can be used to address many of the key issues of interest in RTP, including questions concerning temperature measurement and process repeatability.


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