Effect of Extremely Thin Nitrogenous Surface Films on Phosphorus-impurity Profiles in Silicon

1971 ◽  
Vol 15 (2) ◽  
pp. 132-139 ◽  
Author(s):  
J. Makris ◽  
A. Ferris-Prabhu ◽  
M. L. Joshi
Keyword(s):  
Surface Films ◽  
Phosphorus Impurity ◽  
Impurity Profiles

Anomalous Solid Phase Epitaxy Near the Compensation Point in Amorphous Silicon with Boron and Phosphorus Impurity Profiles

1990 ◽  
Vol 205 ◽  
Author(s):  
Young-Jin Jeon ◽  
M. F. Becker ◽  
R. M. Walserd
Keyword(s):  
Impurity Concentration ◽  
Solid Phase ◽  
Intrinsic Rate ◽  
Solid Phase Epitaxy ◽  
Maximum Activation ◽  
Phosphorus Impurity ◽  
P Type ◽  
Laser Interferometric ◽  
Impurity Profiles ◽  
Secondary Ion

AbstractWe made high precision cw laser interferometric measurements of the variations of the rate of solid phase epitaxial regrowth (SPER) of amorphous layers on (100) silicon implanted with both boron and phosphorus. Depth profiles of SPER were correlated with the implanted boron and phosphorus distributions measured by secondary ion mass spectroscopy (SIMS). The results showed that: (1) the minimum (SPER) rate did not occur at the depth where the implanted impurity concentrations were equal; (2) the maximum activation energy for SPER (∼2.9 eV; ≈0.18 eV greater than for SPER in intrinsic Si) occurred at the depth where the regrowth rate was a minimum; (3) the regrowth rates in the dual implanted sample were different from those of the samples doped only with phosphorus at the same net phosphorusc concentration; and (4) the rate at the depth where the impurity concentrations were equal was different from the intrinsic rate. Further interpretation of the results suggests that the SPER rate in the dual implanted samples is equal to the value for intrinsic silicon at a depth where the net ionized impurity concentration is compensated. The SPER rate was a minimum at a depth where the net ionized impurity concentration was slightly p type.

The Detailed Dependence of Implanted Phosphorus Profiles in (100) Single-Crystal Si on Key Implant Parameters

1995 ◽  
Vol 396 ◽  
Author(s):  
V. Ghante ◽  
L. M. Lam ◽  
S. Morris ◽  
S.-H. Yang ◽  
A. F. Tasch ◽  
...  
Keyword(s):  
Thermal Processing ◽  
Semiconductor Device ◽  
Planar Channeling ◽  
Feature Size ◽  
Wide Range ◽  
Axial Channeling ◽  
Phosphorus Impurity ◽  
Channeling Effect ◽  
Doping Profiles ◽  
Impurity Profiles

AbstractThe continued decrease in semiconductor device feature size has required much smaller thermal processing budgets in order to achieve the required compact doping profiles. As a result, the impurity profiles have a larger dependence on the ion implant parameters, and more attention must be given to minimizing channeling, which results in deeper implanted profiles. Thus, there is a need for a detailed understanding of the dependence of the implanted profile on the key implant parameters. Since such an understanding does not exist for phosphorus implants in silicon, a detailed study has been performed by obtaining experimental phosphorus impurity profiles for a wide range of implant energies (15 - 180 keV), doses (lx1013- 8×1015 cm–2), tilt angles (0° - 10°), and rotation angles (0° - 360°). Channeling along the <100 axial channel dominates the variations. (110) planar channeling is the next most important channeling effect, appearing at higher (5°) tilt angles, where <100 axial channeling is suppressed. (100) planar channeling is not observed at the lower energies but does manifest itself for energies of 80keV and greater. Dose dependencies play a large role beginning around lxlO14 cm-2.

Surface Films on Zircaloy-2 Samples Cracked in Neutral Aqueous NaCl by Stress Corrosion

1973 ◽  
Vol 31 ◽  
pp. 46-47
Author(s):  
R.A. Ploc
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Film Thickness ◽  
Stress Corrosion ◽  
Zirconium Dioxide ◽  
Surface Film ◽  
Surface Films ◽  
Continuous Layer ◽  
Transmission Electron ◽  
Product Film

Samples of low-nickel Zircaloy-2 (material MLI-788-see(1)), when anodically polarized in neutral 5 wt% NaCl solutions, were found to be susceptible to pitting and stress corrosion cracking. The SEM revealed that pitting of stressed samples was occurring below a 2000Å thick surface film which behaved differently from normal zirconium dioxide in that it did not display interference colours. Since the initial film thickness was approximately 65Å, attempts were made to examine the product film by transmission electron microscopy to deduce composition and how the corrosion environment could penetrate the continuous layer.

TEM studies of amorphization processes and amorphous structures

1988 ◽  
Vol 46 ◽  
pp. 448-449
Author(s):  
T. E. Mitchell ◽  
R. B. Schwarz
Keyword(s):  
Amorphous Materials ◽  
Fission Products ◽  
Rapid Quenching ◽  
Surface Films ◽  
List Type ◽  
Oxide Glasses ◽  
Crystalline Materials ◽  
Amorphous Structures ◽  
Amorphous Surface ◽  
Interfacial Films

Traditional oxide glasses occur naturally as obsidian and can be made easily by suitable cooling histories. In the past 30 years, a variety of techniques have been discovered which amorphize normally crystalline materials such as metals. These include [1-3]:Rapid quenching from the vapor phase.Rapid quenching from the liquid phase.Electrodeposition of certain alloys, e.g. Fe-P.Oxidation of crystals to produce amorphous surface oxide layers.Interdiffusion of two pure crystalline metals.Hydrogen-induced vitrification of an intermetal1ic.Mechanical alloying and ball-milling of intermetal lie compounds.Irradiation processes of all kinds using ions, electrons, neutrons, and fission products.We offer here some general comments on the use of TEM to study these materials and give some particular examples of such studies.Thin specimens can be prepared from bulk homogeneous materials in the usual way. Most often, however, amorphous materials are in the form of surface films or interfacial films with different chemistry from the substrates.

Corrections for surface films in microanalysis by EDS and EELS

1992 ◽  
Vol 50 (2) ◽  
pp. 1230-1231
Author(s):  
J. Bentley ◽  
E. A. Kenik
Keyword(s):  
Hydrocarbon Contamination ◽  
Specimen Preparation ◽  
Surface Films ◽  
Ion Milling ◽  
Preferential Sputtering ◽  
Electron Energy Loss Spectrometry ◽  
Composition Determination ◽  
Analytical Electron ◽  
First Order Correction ◽  
Electron Energy Loss

Common artifacts on analytical electron microscope (AEM) specimens prepared from bulk materials are surface films with altered structure and composition that result from electropolishing, oxidation, hydrocarbon contamination, or ion milling (preferential sputtering or deposition of sputtered specimen or support material). Of course, the best solution for surface films is to avoid them by improved specimen preparation and handling procedures or to remove them by low energy ion sputter cleaning, a capability that already exists on some specialized AEMs and one that is likely to become increasingly common. However, the problem remains and it is surprising that surface films have not received more attention with respect to composition determination by energy dispersive X-ray spectrometry (EDS) and electron energy loss spectrometry (EELS).For EDS, an effective first-order correction to remove the contribution of surface films on wedge shaped specimens is to subtract from the spectrum of interest a spectrum obtained under identical conditions (probe current, diffracting conditions, acquisition live time) from a thinner region of the specimen.

Sampling and analysis of the air-water interface with SEM and EDS of microlayers

1989 ◽  
Vol 47 ◽  
pp. 1004-1005
Author(s):  
Randall W. Smith ◽  
John Dash
Keyword(s):  
Heavy Metals ◽  
Surface Microlayer ◽  
Surface Films ◽  
Water Interface ◽  
Physical Processes ◽  
Infrared Spectroscopic Analysis ◽  
Eds Analysis ◽  
Air Water Interface ◽  
Significant Area ◽  
Bulk Chemical

The structure of the air-water interface forms a boundary layer that involves biological ,chemical geological and physical processes in its formation. Freshwater and sea surface microlayers form at the air-water interface and include a diverse assemblage of organic matter, detritus, microorganisms, plankton and heavy metals. The sampling of microlayers and the examination of components is presently a significant area of study because of the input of anthropogenic materials and their accumulation at the air-water interface. The neustonic organisms present in this environment may be sensitive to the toxic components of these inputs. Hardy reports that over 20 different methods have been developed for sampling of microlayers, primarily for bulk chemical analysis. We report here the examination of microlayer films for the documentation of structure and composition.Baier and Gucinski reported the use of Langmuir-Blogett films obtained on germanium prisms for infrared spectroscopic analysis (IR-ATR) of components. The sampling of microlayers has been done by collecting fi1ms on glass plates and teflon drums, We found that microlayers could be collected on 11 mm glass cover slips by pulling a Langmuir-Blogett film from a surface microlayer. Comparative collections were made on methylcel1ulose filter pads. The films could be air-dried or preserved in Lugol's Iodine Several slicks or surface films were sampled in September, 1987 in Chesapeake Bay, Maryland and in August, 1988 in Sequim Bay, Washington, For glass coverslips the films were air-dried, mounted on SEM pegs, ringed with colloidal silver, and sputter coated with Au-Pd, The Langmuir-Blogett film technique maintained the structure of the microlayer intact for examination, SEM observation and EDS analysis were then used to determine organisms and relative concentrations of heavy metals, using a Link AN 10000 EDS system with an ISI SS40 SEM unit. Typical heavy microlayer films are shown in Figure 3.

Coadsorption of bulky ions by surfactants. Monomolecular layers of tris(2,2'-bipyridyl)ruthenium(II) complex with sodium lauryl sulphate on glassy carbon, platinium, n-SnO2, and n-Si electrodes

1984 ◽  
Vol 49 (10) ◽  
pp. 2187-2196 ◽  
Author(s):  
Jan Lasovský ◽  
František Grambal ◽  
Miroslav Rypka
Keyword(s):  
Glassy Carbon ◽  
Complex Cation ◽  
Radiant Energy ◽  
Electric Energy ◽  
Sodium Lauryl Sulphate ◽  
Surface Films ◽  
Order Of Magnitude ◽  
Monomolecular Layers ◽  
Self Association ◽  
Semiconductor Electrodes

The electrochemical and photochemical behaviour of tris(2,2'-bipyridyl)ruthenium(II) complex (I) on glassy carbon, platinium, n-SnO2, and n-Si electrodes in the presence of sodium lauryl sulphate (II) was investigated. The surfactant in low concentrations induces self-association of the complex cation and its accumulation in the electrode-solution interface. At the optimum concentrations of sodium lauryl sulphate (cII ~0.6 mmol l-1) and of the complex (cI < 0.1 mmol l-1), monomolecular layers composed of I, II counterions are formed on the electrodes. The formation of the surface films does not depend on the kind of the electrode and improves the sensitivity of the voltammetric determination of I by as much as an order of magnitude. For the semiconductor electrodes, the surface films enhance the efficiency of conversion of radiant energy into electric energy. The effect under study may participate in the photosynthesis of green plants.

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