Fabrication of W/C Multilayers by Direct Ion Beam Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
K. Ito ◽  
K. Nishimoto ◽  
K. Watanabe ◽  
I. Kataoka ◽  
Frédéric Widmann
Keyword(s):  
Ion Beam ◽  
Composite Layer ◽  
Layered Structures ◽  
Carbon Layer ◽  
Monolayer Films ◽  
Cross Sectional ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
The Difference ◽  
Beam Deposition

ABSTRACTThe multilayer structures of tungsten and carbon for soft x-ray mirrors were fabricated by the low energy (<100eV) direct ion beam deposition method with various depositing ion energies. The layered structures were observed by cross sectional TEM. The undulated structures were found in the layered structures of the depositing ion energy of 6OeV and lOOeV. It becomes larger as the depositing ion energy increases, and the undulation of the upper layers was larger than that of the under layers. The undulation seems to increase in each carbon layer. These results are quite different from the results of evaluation of thick monolayer films in the previous work. Then, the interfacial composite layer was evaluated by XPS. The tungsten carbide layer was found at the W/ C interface on the C layer. However, we can not find such layer at the interface on the W layer. This result can be explained by the difference of the momentum of the depositing ion.

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Ion Beam Deposition of Epitaxial Silicon Films

1997 ◽  
Vol 485 ◽  
Author(s):  
H. R. Khan ◽  
H. Frey
Keyword(s):  
Ion Beam ◽  
Silicon Films ◽  
Epitaxial Silicon ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Si Films ◽  
Silane Plasma ◽  
Beam Deposition

AbstractSilicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.

Direct ion beam deposition of carbon films on silicon in the ion energy range of 15–500 eV

1991 ◽  
Vol 70 (10) ◽  
pp. 5623-5628 ◽  
Author(s):  
W. M. Lau ◽  
I. Bello ◽  
X. Feng ◽  
L. J. Huang ◽  
Qin Fuguang ◽  
...  
Keyword(s):  
Energy Range ◽  
Ion Beam ◽  
Carbon Films ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

The Effects of Ion Energy on Carbon and Tungsten Films Fabricated by Direct Ion Beam Deposition and Ion Beam Sputtering Deposition

1991 ◽  
Vol 223 ◽  
Author(s):  
I. Kataoka ◽  
K. Ito ◽  
N. Hoshi ◽  
T. Yonemitsu ◽  
K. Etoh ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Ion Beam ◽  
Amorphous Structure ◽  
Film Structure ◽  
Ion Beam Sputtering ◽  
Ion Energy ◽  
Sputtering Deposition ◽  
Ion Beam Deposition ◽  
Beam Sputtering ◽  
Beam Deposition

ABSTRACTThe x-ray reflectivity and surface morphology of C/W multilayers fabricated by ion beam sputtering (IBS) method was evaluated. Also the surface roughness and amorphous structure of C and W films fabricated by direct ion beam deposition (DIBD) method were evaluated as a function of ion energy. The reflectivity was measured by the C-K line (4.47nm) and STM was used for surface roughness measurement and root-mean-square value of correlation function of the RHEED pattern was used for evaluation of amorphous structure. The reflectivity of C/W multilayer was about 69% of the theoretical one, and micro-columnar structures were observed from STM images. The film structure and surface roughness of DIBD film were changed with the depositing ion energy. The surface roughness of films becomes smaller as the depositing energy becomes higher in the energy range from 20 to 140eV.

1X Thin Films Prepared By Mass Separated Ion Beam Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
H. C. Hofsäss ◽  
C. Ronntng ◽  
U. Griesmeier ◽  
M. Gross
Keyword(s):  
Thermal Activation ◽  
Room Temperature ◽  
Ion Beam ◽  
Ir Absorption ◽  
Ion Energy ◽  
Ion Beam Deposition ◽  
Ion Energies ◽  
Substrate Temperatures ◽  
Absorption Measurements ◽  
Beam Deposition

AbstractWe have studied the growth and the properties of CN films prepared by deposition of mass separated 12C+ and 14N+ ions. The film thickness and density were determined as a function of ion energy between 20 eV and 500 eV and for substrate temperatures of 20 °C and 350 °C. Sputtering effects limit the maximum N concentration to about 30 - 40 at.% even for ion energies as low as 20 eV. IR absorption measurements indicate predominantly C-N and C=N bonding and an amorphous or strongly disordered CN-network. For room temperature deposited CN films with N concentrations up to 25 at.% I-V curves of metal-CN-metal devices show Frenkel-Poole behavior due to field-enhanced thermal activation of localized electrons. Films deposited at 350 °C have N concentrations below 15 at.% and graphitic properties like low resistivity and a density close to graphite.

Elastic Properties of Diamond-Like Amorphous Carbon Films Grown by Computer Simulation of Ion-Beam Deposition Process

2000 ◽  
Vol 648 ◽  
Author(s):  
A.Yu. Belov ◽  
H.U. Jäger
Keyword(s):  
Amorphous Carbon ◽  
Elastic Constants ◽  
Ion Beam ◽  
Carbon Films ◽  
Atomic Scale ◽  
Ion Energy ◽  
Amorphous Carbon Films ◽  
Ion Beam Deposition ◽  
Bulk Stress ◽  
Beam Deposition

AbstractAtomic-scale calculations were performed for the first time to investigate mechanical properties of amorphous carbon films grown by a realistic simulation of ion-beam deposition. The simulated films have a thickness of a few nanometers and reproduce the main structural features of real films, with the bulk content of sp3 bonded atoms varying from 35 to 95%, depending on the ion energy (E = 20-80 eV). Employing empirical interatomic potentials for carbon, the average bulk stresses as well as the atomic-level stress distributions were calculated and analysed. The bulk stresses were found to depend not only on the ion energy, but also on the film quality, in particular, on such structural inhomogeneities as local fluctuations of the sp3 fraction with the depth. The local variation of the bulk stress from the average value considerably increases as the local content of sp2 bonded atoms increases. Elastic constants of amorphous carbon films were also computed using the method of inner elastic constants, which allows for the stress dependence of elastic constants to be analysed. The variation of Young's modulus as a function of the lateral bulk stress in an amorphous film is demonstrated.

Tem and X-Ray Investigation of Single Crystal-Like Zirconia Films Fabricated by Dual Ion Beam Deposition

1995 ◽  
Vol 396 ◽  
Author(s):  
Kevin G. Ressler ◽  
Neville Sonnenberg ◽  
Michael J. Cima
Keyword(s):  
Single Crystal ◽  
Quartz Substrate ◽  
Ion Beam ◽  
Film Plane ◽  
Film Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Ion Beam Deposition ◽  
Amorphous Quartz ◽  
Beam Deposition

AbstractSingle crystal-like yttria-stabilized zirconia (YSZ) thin films have been deposited on amorphous quartz, polycrystalline zirconia, single crystal Si, and Hastelloy substrates using dual ion beam deposition (IBAD). These films are highly crystallographically aligned both normal to and within the film plane. The films are deposited at low substrate temperatures (<200°C), and the film orientation is substrate independent. θ-2θ X-ray diffraction, X-ray rocking curves, X-ray pole figures and X-ray phi scans are used to evaluate the film structure. High resolution cross-sectional TEM is used to examine the evolution of crystallographic film alignment on an amorphous quartz substrate. The data suggest that the evolution of biaxial alignment is nucleation controlled under these conditions.

Ion Beam Deposition of Materials At 40–200 Ev: Effect of Ion Energy And Substrate Temperature On Interface, Thin Film And Damage Formation

1985 ◽  
Vol 51 ◽  
Author(s):  
N. Herbots ◽  
B.R. Appleton ◽  
S.J. Pennycook ◽  
T.S. Noggle ◽  
R.A. Zuhr
Keyword(s):  
Substrate Temperature ◽  
Ion Beam ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Ion Channeling ◽  
Ion Beam Deposition ◽  
Si Films ◽  
Highly Uniform ◽  
Beam Deposition

ABSTRACTIon beam deposition (IBD), the process whereby magnetically analyzed ions are directly deposited on single crystal substrates, has been studied for 74Ge and 30Si ions on Si(100) and Ge(100). The effects of sputtercleaning prior to deposition and substrate temperature during deposition were investigated. Three analytical techniques were systematically used to obtain information on the deposited films: (1) Rutherford backscattering combined with ion channeling, (2) cross-section TEM, and (3) Seeman-Bohlin X-ray diffraction. In the energy range explored (40–200 eV), the width of the interface between the IBD film and the substrate was found to be always less than 1 nm. Each IBD layer was highly uniform in thickness and composition for deposition temperatures from 300 K to 900 K. Without prior sputter-cleaning and annealing of the Si(100) and Ge(100) substrates, no epitaxy was observed. UHV conditions were found to be a requirement in order to grow crystalline Si films presenting bulk-like density. This was not the case for Ge films which showed bulk-like density for IBD at higher pressures. Results on the first Si/Ge superstructure grown by IBD are also shown.

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