Short-Time Hydrogen Passivation of Poly-Si CMOS Thin film Transistors by High Dose Rate Plasma Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
Shu Qin ◽  
James D. Bernstein ◽  
Yuanzhong Zhou ◽  
Wei Liu ◽  
Chung Chan ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Dose Rate ◽  
Thin Film Transistors ◽  
Pulse Generator ◽  
Plasma Source ◽  
High Dose Rate ◽  
High Dose ◽  
Short Time ◽  
Good Agreement

AbstractPlasma ion implantation (PII) hydrogenation has been developed for defect passivation in polycrystalline silicon (poly-Si) thin film transistors (TFTs). A high dose rate PII process using a microwave multipolar bucket (MMB) plasma source and a 12.5 kHz pulse generator achieves saturation of device parameter improvement in 5 minutes, which is much shorter than other hydrogenation methods investigated thus far. These results have been achieved in one sixth the implant time of our previous PII experiments and are in good agreement with our process simulation.

Plasma Source Ion Implantation for Ultrashallow Junctions: Low Energy and High Dose Rate

2001 ◽  
Vol 40 (Part 1, No. 4A) ◽  
pp. 2506-2507
Author(s):  
Jeonghee Cho ◽  
Seunghee Han ◽  
Yeonhee Lee ◽  
Ok Kyung Kim ◽  
Gon-Ho Kim ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Plasma Source ◽  
High Dose Rate ◽  
Low Energy ◽  
High Dose ◽  
Ultrashallow Junctions ◽  
Plasma Source Ion Implantation

Etching and Charging Effects on Dose in Plasma Immersion Ion Implantation

1994 ◽  
Vol 354 ◽  
Author(s):  
Jiqun Shao ◽  
Eaton Corporation ◽  
Shu Qin ◽  
Zhuofan Zhao ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Lower Energy ◽  
Processing Time ◽  
General Relation ◽  
High Dose Rate ◽  
High Dose ◽  
Dose Estimation ◽  
Effective Current ◽  
Plasma Immersion Ion Implantation

AbstractA general relation between the implanted dose and the processing time for plasma immersion ion implantation (PHI) can be established through the dynamic sheath model. In practice, etching and charging effects have to be taken into account in PIII dose estimation.Plasma immersion ion implantation (PII) has been tested in fabrication of semiconductor devices with shallow junctions and in hydrogénation of poly-Si thin film transistors (TFT). PIII doping is more suitable than conventional implantation for such applications because of its high dose rate at lower energy. Since the dose rate in PIII does not depend on the area being treated, the effective current will be higher if a larger implanted area is involved. However, the relation between dose and time is not always straightforward. During PIII processing possible etching and charging will affect the total accumulated doses. This paper presents a model for each which allows a proper compensation to be performed.

High dose rate hydrogen plasma ion implantation

1996 ◽  
Vol 85 (1-2) ◽  
pp. 56-59 ◽  
Author(s):  
S. Qin ◽  
J.D. Bernstein ◽  
C. Chan ◽  
J. Shao ◽  
S. Denholm
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
Hydrogen Plasma ◽  
High Dose Rate ◽  
High Dose

Reflectance of silicon surfaces after high dose rate molecular ion implantation

1981 ◽  
Vol 182-183 ◽  
pp. 595-600 ◽  
Author(s):  
M.O. Lampert ◽  
M. Hage-Ali ◽  
J.C. Muller ◽  
M. Toulemonde ◽  
P. Siffert
Keyword(s):  
Ion Implantation ◽  
Dose Rate ◽  
High Dose Rate ◽  
Silicon Surfaces ◽  
High Dose ◽  
Molecular Ion

Radiological Control of Gold Octahedral and Prism Nanoparticles

2007 ◽  
Vol 1056 ◽  
Author(s):  
Tina M. Nenoff ◽  
Jason C. Jones ◽  
Paula P. Provencio ◽  
Donald T. Berry
Keyword(s):  
Dose Rate ◽  
High Dose Rate ◽  
Pure Gold ◽  
High Dose ◽  
Visible Absorption ◽  
Dose Rates ◽  
Radiation Induced ◽  
Radiological Control ◽  
Uv Visible ◽  
Short Time

ABSTRACTWe report on a fundamental morphology growth of gold-based nanoparticles by solution radiolysis. Radiolysis of pure gold-polymer solutions of different dose rates and aging time is examined. A detailed description will be presented of the experimentation, testing and analysis. In particular, we will present data on the formation of gold nano-octahedra and -prism particles. The γ-irradiations were carried out with a 60Co source of 1.345 × 105 Ci (Sandia National Laboratories Gamma Irradiation Facility (GIF). Nanoparticle characterization techniques included are UV-vis and TEM. Similar to what has been seen in earlier silver nanoparticle studies, dose rate dictates the size of nanoparticles formed. At high dose rate, all reducing species are produced and scavenged within a short time, and then coalesce into separate nanoparticles. At low dose rate, the coalescence process is faster than the production rate of the reducing radicals. The reduction of radicals occurs mainly on clusters already formed. The differences in the morphologies result from a combination of dose rate, aging and lack of radical scavengers (e.g. isopropyl alcohol), resulting in either gold nano-spheres, octahedral or prism nanoparticles. The progressive evolution with dose rate of the UV-visible absorption spectra of radiation-induced metal clusters is discussed.

scholarly journals Standardization and Validation of Brachytherapy Seeds’ Modelling Using GATE and GGEMS Monte Carlo Toolkits

Cancers ◽  
2021 ◽  
Vol 13 (21) ◽  
pp. 5315
Author(s):  
Konstantinos P. Chatzipapas ◽  
Dimitris Plachouris ◽  
Panagiotis Papadimitroulas ◽  
Konstantinos A. Mountris ◽  
Julien Bert ◽  
...  
Keyword(s):  
Dose Rate ◽  
Clinical Case ◽  
High Dose Rate ◽  
High Dose ◽  
Statistical Uncertainty ◽  
Radial Dose Function ◽  
Pulsed Dose Rate ◽  
Anisotropy Function ◽  
Radial Dose ◽  
Good Agreement

This study aims to validate GATE and GGEMS simulation toolkits for brachytherapy applications and to provide accurate models for six commercial brachytherapy seeds, which will be freely available for research purposes. The AAPM TG-43 guidelines were used for the validation of two Low Dose Rate (LDR), three High Dose Rate (HDR), and one Pulsed Dose Rate (PDR) brachytherapy seeds. Each seed was represented as a 3D model and then simulated in GATE to produce one single Phase-Space (PHSP) per seed. To test the validity of the simulations’ outcome, referenced data (provided by the TG-43) was compared with GATE results. Next, validation of the GGEMS toolkit was achieved by comparing its outcome with the GATE MC simulations, incorporating clinical data. The simulation outcomes on the radial dose function (RDF), anisotropy function (AF), and dose rate constant (DRC) for the six commercial seeds were compared with TG-43 values. The statistical uncertainty was limited to 1% for RDF, to 6% (maximum) for AF, and to 2.7% (maximum) for the DRC. GGEMS provided a good agreement with GATE when compared in different situations: a) Homogeneous water sphere, b) heterogeneous CT phantom, and c) a realistic clinical case. In addition, GGEMS has the advantage of very fast simulations. For the clinical case, where TG-186 guidelines were considered, GATE required 1 h for the simulation while GGEMS needed 162 s to reach the same statistical uncertainty. This study produced accurate models and simulations of their emitted spectrum of commonly used commercial brachytherapy seeds which are freely available to the scientific community. Furthermore, GGEMS was validated as an MC GPU based tool for brachytherapy. More research is deemed necessary for the expansion of brachytherapy seed modeling.

Sign in / Sign up

Export Citation Format

Share Document