Dual Ion Beam Sputtering of Carbides for EUV Reflectance

1995 ◽  
Vol 396 ◽  
Author(s):  
Dan Schwarcz ◽  
R.A.M. Keski-Kuha
Keyword(s):  
Boron Carbide ◽  
Extreme Ultraviolet ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Optical Surfaces ◽  
Sputtered Films ◽  
Ion Beam Assisted Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Sic Films

AbstractThere is a need for thin optical coatings that can be produced at low temperatures and have a high reflectance at the extreme ultraviolet (EUV), λ < 1200 Å. Currently, the best such materials are silicon carbide (SiC) and boron carbide sputtered onto optical surfaces. The EUV reflectance of sputtered SiC, however, is not as high as that of the sputtered target materials (sintered or CVD -SiC). More significantly, the reflectance of both sputtered films degrades with time. In previous work the reflectance degradation of the SiC films has been quantified, and efforts to ameliorate it via ion-beam assisted deposition (BAD) were described. Further work on sputtered SiC films is reported, including chemical and structural analysis. In addition, the degradation behavior of sputtered boron carbide is discussed.

HARD AND TOUGH NANOCOMPOSITE TiN-Ni COATINGS DEPOSITED BY REACTIVE ION BEAM ASSISTED DEPOSITION

2008 ◽  
Vol 22 (18n19) ◽  
pp. 2979-2988 ◽  
Author(s):  
ALIREZA AKBARI ◽  
JEAN PAUL RIVIERE ◽  
CLAUDE TEMPLIER
Keyword(s):  
Ion Beam ◽  
High Load ◽  
Nanocomposite Coatings ◽  
Ion Beam Sputtering ◽  
Ion Beam Assisted Deposition ◽  
Ni Content ◽  
Important Improvement ◽  
Beam Sputtering ◽  
Pin On Disk ◽  
Dual Ion Beam Sputtering

A new category of hard nanocomposite coatings with adjustable improved hardness or enhanced toughness consisting of nanocrystalline (nc-) titanium nitride grains embedded in an amorphous (a-) metallic intergranular nickel phase i.e. nc - TiN / a - Ni type has been produced and investigated. Coatings were deposited at 573K on different substrates using a reactive dual ion beam sputtering (RDIBS) technique. A composite Ti - Ni target was sputtered with 1.2 keV Ar + ions and the growing films were bombarded with a mixture of 50 eV Ar ++ N 2++ N + ions. XRD, nanoindentation, high load indentation and pin-on-disk tests were used to characterize structural and mechanical properties. By adjusting Ni content enhanced hardness or toughness is obtained with an important improvement in wear resistance corresponding to the coatings exhibiting the highest toughness than highest hardness.

scholarly journals Room-Temperature Growth of SiC Thin Films by Dual-Ion-Beam Sputtering Deposition

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
C. G. Jin ◽  
X. M. Wu ◽  
L. J. Zhuge
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Ion Beam ◽  
Substrate Surface ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Sic Films

Silicon carbide (SiC) films were prepared by single and dual-ion-beamsputtering deposition at room temperature. An assisted Ar+ ion beam (ion energy Ei = 150 eV) was directed to bombard the substrate surface to be helpful for forming SiC films. The microstructure and optical properties of nonirradicated and assisted ion-beam irradicated films have been characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FTIR), and Raman spectra. TEM result shows that the films are amorphous. The films exposed to a low-energy assisted ion-beam irradicated during sputtering from a-SiC target have exhibited smoother and compacter surface topography than which deposited with nonirradicated. The ion-beam irradicated improves the adhesion between film and substrate and releases the stress between film and substrate. With assisted ion-beam irradicated, the density of the Si–C bond in the film has increased. At the same time, the excess C atoms or the size of the sp2 bonded clusters reduces, and the a-Si phase decreases. These results indicate that the composition of the film is mainly Si–C bond.

scholarly journals Blue electroluminescence from Sb-ZnO/Cd-ZnO/Ga-ZnO heterojunction diode fabricated by dual ion beam sputtering

2014 ◽  
Vol 22 (25) ◽  
pp. 30983 ◽  
Author(s):  
Sushil Kumar Pandey ◽  
Vishnu Awasthi ◽  
Shruti Verma ◽  
Shaibal Mukherjee
Keyword(s):  
Ion Beam ◽  
Heterojunction Diode ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Formation of the crystalline β-C3N4 phase by dual ion beam sputtering deposition

2007 ◽  
Vol 61 (14-15) ◽  
pp. 2855-2858 ◽  
Author(s):  
J.P. Rivière ◽  
D. Texier ◽  
J. Delafond ◽  
M. Jaouen ◽  
E.L. Mathé ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

Ultra-low stress high reflective film by dual-ion-beam sputtering deposition

2021 ◽  
Vol 61 (03) ◽  
Author(s):  
Jinlin Bai ◽  
Huasong Liu ◽  
Yugang Jiang ◽  
Lishuan Wang ◽  
Xiao Yang ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

The influence of secondary ion beam irradiation on the formation of Si nanocrystals during dual ion beam sputtering

2005 ◽  
Vol 478 (1-2) ◽  
pp. 116-120 ◽  
Author(s):  
Jae Kwon Kim ◽  
Kyu Man Cha ◽  
Jung Hyun Kang ◽  
Yong Kim ◽  
Jae-Yel Yi ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Sputtering ◽  
Ion Beam Irradiation ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering ◽  
Secondary Ion
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